Showing 1–1 of 1 results for author: Abramson, E H
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Recovery of Si-IV nanowires from extreme GPa pressure
Authors:
Bennett E. Smith,
Xuezhe Zhou,
Paden B. Roder,
Evan H. Abramson,
Peter J. Pauzauskie
Abstract:
We use Raman spectroscopy in tandem with transmission electron microscopy and DFT simulations to show that extreme (GPa) pressure converts the phase of silicon nanowires from cubic (Si-I) to hexagonal (Si-IV) while preserving the nanowire's cylindrical morphology. In situ Raman scattering of the TO mode demonstrates the high-pressure Si-I to Si-II phase transition near 9 GPa. Raman signal of the T…
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We use Raman spectroscopy in tandem with transmission electron microscopy and DFT simulations to show that extreme (GPa) pressure converts the phase of silicon nanowires from cubic (Si-I) to hexagonal (Si-IV) while preserving the nanowire's cylindrical morphology. In situ Raman scattering of the TO mode demonstrates the high-pressure Si-I to Si-II phase transition near 9 GPa. Raman signal of the TO phonon shows a decrease in intensity in the range 9 to 14 GPa. Then, at 17 GPa, it is no longer detectable, indicating a second phase change (Si-II to Si-V) in the 14 to 17 GPa range. Recovery of exotic phases in individual silicon nanowires from diamond anvil cell experiments reaching 17 GPa is also shown. Raman measurements indicate Si-IV as the dominant phase in pressurized nanowires after decompression. Transmission electron microscopy and electron diffraction confirm crystalline Si-IV domains in individual nanowires. Computational electromagnetic simulations suggest that heating from the Raman laser probe is negligible and that near-hydrostatic pressure is the primary driving force for the formation of hexagonal silicon nanowires.
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Submitted 7 February, 2016; v1 submitted 16 October, 2015;
originally announced October 2015.