Effects of Quantum and Dielectric Confinement on the Emission of Cs-Pb-Br Composites
Authors:
Sebastián Caicedo-Dávila,
Pietro Caprioglio,
Frederike Lehmann,
Sergiu Levcenco,
Martin Stolterfoht,
Dieter Neher,
Leeor Kronik,
Daniel Abou-Ras
Abstract:
The halide perovskite CsPbBr$_3$ belongs to the Cs-Pb-Br material system, which features two additional thermodynamically stable ternary phases, Cs$_4$PbBr$_6$ and CsPb$_2$Br$_5$. The coexistence of these phases and their reportedly similar photoluminescence have resulted in a debate on the nature of the emission in these systems. Here, we combine optical and microscopic characterization with an e…
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The halide perovskite CsPbBr$_3$ belongs to the Cs-Pb-Br material system, which features two additional thermodynamically stable ternary phases, Cs$_4$PbBr$_6$ and CsPb$_2$Br$_5$. The coexistence of these phases and their reportedly similar photoluminescence have resulted in a debate on the nature of the emission in these systems. Here, we combine optical and microscopic characterization with an effective mass, correlated electron-hole model of excitons in confined systems, to investigate the emission properties of the ternary phases in the Cs-Pb-Br system. We find that all Cs-Pb-Br phases exhibit green emission and the non-perovskite phases exhibit photoluminescence quantum yields orders of magnitude larger than CsPbBr$_3$. In particular, we measure blue- and red-shifted emission for the Cs- and Pb-rich phases, respectively, stemming from embedded CsPbBr$_3$ nanocrystals. Our model reveals that the difference in emission shift is caused by the combined effects of nanocrystal size and different band mismatch. Furthermore, we demonstrate the importance of including the dielectric mismatch in the calculation of the emission energy for Cs-Pb-Br composites. Our results explain the reportedly limited blue shift in CsPbBr$_3$@Cs$_4$PbBr$_6$ composites and rationalize some of its differences with CsPb$_2$Br$_5$.
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Submitted 21 June, 2023; v1 submitted 14 June, 2023;
originally announced June 2023.
Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment
Authors:
Mohit Sood,
Alberto Lomuscio,
Florian Werner,
Aleksandra Nikolaeva,
Phillip J. Dale,
Michele Melchiorre,
Jerome Guillot,
Daniel Abou-Ras,
Susanne Siebentritt
Abstract:
Interface recombination at the absorber buffer interface impedes the efficiency of a solar cell with an otherwise excellent absorber. The internal voltage or the quasi-Fermi level splitting (qFLs) measures the quality of the absorber. Interface recombination reduces the open circuit voltage (VOC) with respect to the qFLs. The present work explores a facile sulfur-based post-deposition treatment (S…
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Interface recombination at the absorber buffer interface impedes the efficiency of a solar cell with an otherwise excellent absorber. The internal voltage or the quasi-Fermi level splitting (qFLs) measures the quality of the absorber. Interface recombination reduces the open circuit voltage (VOC) with respect to the qFLs. The present work explores a facile sulfur-based post-deposition treatment (S-PDT) to passivate the interface of CuInS2 thin films grown under Cu-rich conditions, which show excellent qFLs values, but much lower VOCs. The CuInS2 absorbers are treated in three different S-containing solutions at 80 oC. Absolute calibrated photoluminescence and current-voltage measurements demonstrate a reduction of the deficit between qFLs and VOC in the best S-PDT device by almost one third compared to the untreated device. Analysis of temperature dependence of the open-circuit voltage shows increased activation energy for the dominant recombination path, indicating less interface recombination. In addition, capacitance transient measurements reveal the presence of slow metastable defects in the untreated solar cell. The slow response is considerably reduced by the S-PDT, suggesting passivation of these slow metastable defects. The results demonstrate the effectiveness of solution based S-treatment in passivating defects, presenting a promising strategy to explore and reduce defect states near the interface of chalcogenide semiconductors.
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Submitted 29 January, 2021;
originally announced January 2021.
