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Development of an X-ray polarimeter at the SOLEIL Synchrotron
Authors:
L. Manzanillas,
J. M. Ablett,
M. Choukroun,
F. J. Iguaz,
J. P. Rueff
Abstract:
Synchrotron radiation facilities provide highly polarized X-ray beams across a wide energy range. However, the exact type and degree of polarization varies according to the beamline and experimental setup. To accurately determine the angle and degree of linear polarization, a portable X-ray polarimeter has been developed. This setup consists of a Silicon Drift Detector that rotates around a target…
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Synchrotron radiation facilities provide highly polarized X-ray beams across a wide energy range. However, the exact type and degree of polarization varies according to the beamline and experimental setup. To accurately determine the angle and degree of linear polarization, a portable X-ray polarimeter has been developed. This setup consists of a Silicon Drift Detector that rotates around a target made of high-density polyethylene. The imprint generated in the angular distribution of scattered photons at a 90-degree angle from the target has been exploited to determine the beam polarization. Measurements were conducted at the GALAXIES beamline of the SOLEIL Synchrotron. The expected angular distribution of the scattered photons for a given beam polarization was obtained through simulations using the Geant4 simulation toolkit. An excellent agreement between simulations and the collected data has been obtained, validating the setup and enabling a precise determination of the beam polarization.
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Submitted 12 September, 2023; v1 submitted 11 September, 2023;
originally announced September 2023.
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Pressure evolution of electronic and crystal structure of non-centrosymmetric EuCoGe$_3$
Authors:
N. S. Dhami,
V. Balédent,
O. Bednarchuk,
D. Kaczorowski,
S. R. Shieh,
J. M. Ablett,
J. -P. Rueff,
J. P. Itié,
C. M. N. Kumar,
Y. Utsumi
Abstract:
We report on the pressure evolution of the electronic and crystal structures of the noncentrosymmetric antiferromagnet EuCoGe3. Using a diamond anvil cell, we performed high pressure fluorescence detected near-edge x-ray absorption spectroscopy at the Eu L3, Co K, and Ge K edges and synchrotron powder x-ray diffraction. In the Eu L3 spectrum, both divalent and trivalent Eu peaks are observed from…
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We report on the pressure evolution of the electronic and crystal structures of the noncentrosymmetric antiferromagnet EuCoGe3. Using a diamond anvil cell, we performed high pressure fluorescence detected near-edge x-ray absorption spectroscopy at the Eu L3, Co K, and Ge K edges and synchrotron powder x-ray diffraction. In the Eu L3 spectrum, both divalent and trivalent Eu peaks are observed from the lowest pressure measurement (~2 GPa). By increasing pressure, the relative intensity of the trivalent Eu peak increases, and an average Eu valence continuously increases from 2.2 at 2 GPa to 2.31 at~50 GPa. On the other hand, no discernible changes are observed in the Co K and Ge K spectra as a function of pressure. With the increase in pressure, lattice parameters continuously decrease without changing I4mm symmetry. Our study revealed a robust divalent Eu state and an unchanged crystal symmetry of EuCoGe3 against pressure.
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Submitted 31 March, 2023;
originally announced March 2023.
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Dynamical screening in SrVO$_3$: Inelastic x-ray scattering experiments and ab initio calculations
Authors:
Kari Ruotsalainen,
Alessandro Nicolaou,
Christoph J. Sahle,
Anna Efimenko,
James M. Ablett,
Jean-Pascal Rueff,
Dharmalingam Prabhakaran,
Matteo Gatti
Abstract:
We characterize experimentally and theoretically the high-energy dielectric screening properties of the prototypical correlated metal SrVO$_3$. The dynamical structure factor measured by inelastic x-ray scattering spectroscopy as a function of momentum transfer is in very good agreement with first-principles calculations in the adiabatic local density approximation to time-dependent density-functi…
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We characterize experimentally and theoretically the high-energy dielectric screening properties of the prototypical correlated metal SrVO$_3$. The dynamical structure factor measured by inelastic x-ray scattering spectroscopy as a function of momentum transfer is in very good agreement with first-principles calculations in the adiabatic local density approximation to time-dependent density-functional theory. Our results reveal the crucial importance of crystal local fields in the charge response function of correlated materials: They lead to depolarization effects for localised excitations and couple spectra from different Brillouin zones.
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Submitted 10 June, 2021;
originally announced June 2021.
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Electronic Structure and Small Hole Polarons in YTiO3
Authors:
** Yue,
Nicholas F. Quackenbush,
Iflah Laraib,
Henry Carfagno,
Sajna Hameed,
Abhinav Prakash,
Laxman R. Thoutam,
James M. Ablett,
Tien-Lin Lee,
Martin Greven,
Matthew F. Doty,
Anderson Janotti,
Bharat Jalan
Abstract:
As a prototypical Mott insulator with ferromagnetic ordering, YTiO3 (YTO) is of great interest in the study of strong electron correlation effects and orbital ordering. Here we report the first molecular beam epitaxy (MBE) growth of YTO films, combined with theoretical and experimental characterization of the electronic structure and charge transport properties. The obstacles of YTO MBE growth are…
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As a prototypical Mott insulator with ferromagnetic ordering, YTiO3 (YTO) is of great interest in the study of strong electron correlation effects and orbital ordering. Here we report the first molecular beam epitaxy (MBE) growth of YTO films, combined with theoretical and experimental characterization of the electronic structure and charge transport properties. The obstacles of YTO MBE growth are discussed and potential routes to overcome them are proposed. DC transport and Seebeck measurements on thin films and bulk single crystals identify p-type Arrhenius transport behavior, with an activation energy of ~ 0.17 eV in thin films, consistent with the energy barrier for small hole polaron migration from hybrid density functional theory (DFT) calculations. Hard X-ray photoelectron spectroscopy measurements (HAXPES) show the lower Hubbard band (LHB) at 1.1 eV below the Fermi level, whereas a Mott-Hubbard band gap of ~1.5 eV is determined from photoluminescence (PL) measurements. These findings provide critical insight into the electronic band structure of YTO and related materials.
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Submitted 28 August, 2020;
originally announced August 2020.
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Resonant inelastic x-ray scattering study of do** and temperature dependence of low-energy excitations in La$_{1-x}$Sr$_x$VO$_3$
Authors:
Kari Ruotsalainen,
Matteo Gatti,
James M. Ablett,
Flora Yakhou-Harris,
Jean-Pascal Rueff,
Adrian David,
Wilfrid Prellier,
Alessandro Nicolaou
Abstract:
We present a temperature and do** dependent resonant inelastic X-ray scattering experiment at the V L$_{2,3}$ and O K edges in La$_{1-x}$Sr$_x$VO$_3$ for $x=0$ and $x=0.1$. This material is a canonical example of a compound that exhibits a filling control metal-insulator transition and undergoes orbital ordering and antiferromagnetic transitions at low temperature. Temperature dependent measurem…
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We present a temperature and do** dependent resonant inelastic X-ray scattering experiment at the V L$_{2,3}$ and O K edges in La$_{1-x}$Sr$_x$VO$_3$ for $x=0$ and $x=0.1$. This material is a canonical example of a compound that exhibits a filling control metal-insulator transition and undergoes orbital ordering and antiferromagnetic transitions at low temperature. Temperature dependent measurements at the V L$_{3}$ edge reveal an intra-t$_{2g}$ excitation that blueshifts by 40 meV from room temperature to 30 K at a rate that differs between the para- and antiferromagnetic phases. The lineshape can be partially explained by a purely local model using crystal field theory calculations. At $x=0.1$ the do** is shown to affect the local electronic structure primarily on the O sites, which is in disagreement with a simple Mott-Hubbard picture. We reveal the presence of phonon overtone features at the O K edge, which evidences that the low energy part of the spectrum is dominated by phonon response.
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Submitted 17 May, 2021; v1 submitted 23 April, 2020;
originally announced April 2020.
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Separating Electrons and Donors in BaSnO3 via Band Engineering
Authors:
Abhinav Prakash,
Nicholas F. Quackenbush,
Hwanhui Yun,
Jacob Held,
Tianqi Wang,
Tristan Truttmann,
James M. Ablett,
Conan Weiland,
Tien-Lin Lee,
Joseph C. Woicik,
K. Andre Mkhoyan,
Bharat Jalan
Abstract:
Through a combination of thin film growth, hard X-ray photoelectron spectroscopy (HAXPES), scanning transmission electron microscopy/electron energy loss spectroscopy (STEM/EELS), magneto-transport measurements, and transport modeling, we report on the demonstration of modulation-do** of BaSnO3 (BSO) using a wider bandgap La-doped SrSnO3 (LSSO) layer. Hard X-ray photoelectron spectroscopy (HAXPE…
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Through a combination of thin film growth, hard X-ray photoelectron spectroscopy (HAXPES), scanning transmission electron microscopy/electron energy loss spectroscopy (STEM/EELS), magneto-transport measurements, and transport modeling, we report on the demonstration of modulation-do** of BaSnO3 (BSO) using a wider bandgap La-doped SrSnO3 (LSSO) layer. Hard X-ray photoelectron spectroscopy (HAXPES) revealed a valence band offset of 0.71 +/- 0.02 eV between LSSO and BSO resulting in a favorable conduction band offset for remote do** of BSO using LSSO. Nonlinear Hall effect of LSSO/BSO heterostructure confirmed two-channel conduction owing to electron transfer from LSSO to BSO and remained in good agreement with the results of self-consistent solution to one-dimensional Poisson and Schrödinger equations. Angle-dependent HAXPES measurements revealed a spatial distribution of electrons over 2-3 unit cells in BSO. These results bring perovskite oxides a step closer to room-temperature oxide electronics by establishing modulation-do** approaches in non-SrTiO3-based oxide heterostructure.
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Submitted 11 May, 2019;
originally announced May 2019.
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Epsilon-iron as a spin-smectic state
Authors:
Blair W. Lebert,
Tommaso Gorni,
Michele Casula,
Stefan Klotz,
François Baudelet,
James M. Ablett,
Thomas C. Hansen,
Amélie Juhin,
Alain Polian,
Pascal Munsch,
Gilles Le Marchand,
Zailan Zhang,
Jean-Pascal Rueff,
Matteo d'Astuto
Abstract:
Using x-ray emission spectroscopy, we find appreciable local magnetic moments until 30-40 GPa in the high-pressure phase of iron, however no magnetic order is detected with neutron powder diffraction down to 1.8 K contrary to previous predictions. Our first-principles calculations reveal a "spin-smectic" state lower in energy than previous results. This state forms antiferromagnetic bilayers separ…
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Using x-ray emission spectroscopy, we find appreciable local magnetic moments until 30-40 GPa in the high-pressure phase of iron, however no magnetic order is detected with neutron powder diffraction down to 1.8 K contrary to previous predictions. Our first-principles calculations reveal a "spin-smectic" state lower in energy than previous results. This state forms antiferromagnetic bilayers separated by null spin bilayers, which allows a complete relaxation of the inherent frustration of antiferromagnetism on a hexagonal close-packed lattice. The magnetic bilayers are likely orientationally disordered, owing to the soft interlayer excitations and the near-degeneracy with other smectic phases. This possible lack of long-range correlation agrees with the null results from neutron powder diffraction. An orientationally-disordered, spin-smectic state resolves previously perceived contradictions in high pressure iron and could be integral to explaining its puzzling superconductivity.
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Submitted 3 August, 2019; v1 submitted 12 March, 2019;
originally announced March 2019.
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Charge transfer and tunable built-in electric fields across semiconductor-crystalline oxide interfaces
Authors:
Zheng Hui Lim,
Nicholas F. Quackenbush,
Aubrey Penn,
Matthew Chrysler,
Mark Bowden,
Zihua Zhu,
James M. Ablett,
Tien-lin Lee,
James M. LeBeau,
Joseph C. Woicik,
Peter V. Sushko,
Scott A. Chambers,
Joseph H. Ngai
Abstract:
Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich setting in which built-in fields can be explored. Here, we present an electrical transport and hard X-ray photoelectron spectroscopy study of epitaxial SrNbxTi1-xO3-δ…
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Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich setting in which built-in fields can be explored. Here, we present an electrical transport and hard X-ray photoelectron spectroscopy study of epitaxial SrNbxTi1-xO3-δ / Si heterojunctions. A non-monotonic anomaly in the sheet resistance is observed near room temperature, which is accompanied by a crossover in sign of the Hall resistance. The crossover is consistent with the formation of a hole gas in the Si and the presence of a built-in field. Hard X-ray photoelectron spectroscopy measurements reveal pronounced asymmetric features in both the SrNbxTi1-xO3-δ and Si core-level spectra that we show arise from built-in fields. The extended probe depth of hard X-ray photoelectron spectroscopy enables band bending across the SrNbxTi1-xO3-δ / Si heterojunction to be spatially mapped. Band alignment at the interface and surface depletion in SrNbxTi1-xO3-δ are implicated in the formation of the hole gas and built-in fields. Control of charge transfer and built-in electric fields across semiconductor-crystalline oxide interfaces opens a pathway to novel functional heterojunctions.
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Submitted 10 October, 2018;
originally announced October 2018.
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Layer-resolved band bending at the n-SrTiO3(001)/p-Ge(001) interface
Authors:
Y. Du,
P. V. Sushko,
S. R. Spurgeon,
M. E. Bowden,
J. M. Ablett,
T. -L. Lee,
N. F. Quackenbush,
J. C. Woicik,
S. A. Chambers
Abstract:
The electronic properties of epitaxial heterojunctions consisting of the prototypical perovskite oxide semiconductor,n-SrTiO3 and the high-mobility Group IV semiconductor p-Ge have been investigated. Hard x-ray photoelectron spectroscopy with a new method of analysis has been used to determine band alignment while at the same time quantifying a large built-in potential found to be present within t…
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The electronic properties of epitaxial heterojunctions consisting of the prototypical perovskite oxide semiconductor,n-SrTiO3 and the high-mobility Group IV semiconductor p-Ge have been investigated. Hard x-ray photoelectron spectroscopy with a new method of analysis has been used to determine band alignment while at the same time quantifying a large built-in potential found to be present within the Ge. Accordingly, the built-in potential within the Ge has been mapped in a layer-resolved fashion. Electron transfer from donors in the n-SrTiO3 to the p-Ge creates a space-charge region in the Ge resulting in downward band bending which spans most of the Ge gap. This strong downward band bending facilitates visible-light, photo-generated electron transfer from Ge to STO, favorable to drive the hydrogen evolution reaction associated with water splitting. Ti 2p and Sr 3d core-level line shapes reveal that the STO bands are flat despite the space-charge layer therein. Inclusion of the effect of Ge band bending on band alignment is significant, amounting to a ~0.4 eV reduction in valence band offset compared to the value resulting from using spectra averaged over all layers. Density functional theory allows candidate interface structural models deduced from scanning transmission electron microscopy images to be simulated and structurally optimized. These structures are used to generate multi-slice simulations that reproduce the experimental images quite well. The calculated band offsets for these structures are in good agreement with experiment.
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Submitted 13 August, 2018;
originally announced August 2018.
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HAXPES for materials science at the GALAXIES beamline
Authors:
J. -P. Rueff,
J. E. Rault,
J. M. Ablett,
Y. Utsumi,
D. Céolin
Abstract:
In this article, we will discuss the recent developments of HAXPES at the GALAXIES beamline at the SOLEIL synchrotron for the study of advanced materials.
In this article, we will discuss the recent developments of HAXPES at the GALAXIES beamline at the SOLEIL synchrotron for the study of advanced materials.
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Submitted 19 July, 2018;
originally announced July 2018.
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The Galaxies Beamline at SOLEIL Synchrotron: Inelastic X-ray Scattering and Photoelectron Spectroscopy in the Hard X-ray Range
Authors:
J. -P. Rueff,
J. M. Ablett,
D. Céolin,
D. Prieur,
Th. Moreno,
V. Balédent,
B. Lassalle,
J. E. Rault,
M. Simon,
A. Shukla
Abstract:
The GALAXIES beamline at the SOLEIL synchrotron is dedicated to inelastic x-ray scattering (IXS) and photoelectron spectroscopy (HAXPES) in the 2.3-12 keV hard x-ray range. These two techniques offer powerful, complementary methods of characterization of materials with bulk sensitivity, chemical and orbital selectivity, resonant enhancement and high resolving power. After a description of the beam…
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The GALAXIES beamline at the SOLEIL synchrotron is dedicated to inelastic x-ray scattering (IXS) and photoelectron spectroscopy (HAXPES) in the 2.3-12 keV hard x-ray range. These two techniques offer powerful, complementary methods of characterization of materials with bulk sensitivity, chemical and orbital selectivity, resonant enhancement and high resolving power. After a description of the beamline components and endstations, we address the beamline performances through a selection of recent works both in the solid and gas phases and using either IXS or HAXPES approaches. Prospects for studies on liquids are discussed.
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Submitted 7 June, 2018;
originally announced June 2018.
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Experimental assignment of many-electron excitations in the photo-ionization of NiO
Authors:
J. C. Woicik,
J. M. Ablett,
N. F. Quackenbush,
A. K. Rumaiz,
C. Weiland,
T. C. Droubay,
S. A. Chambers
Abstract:
The absorption of a photon and the emission of an electron is not a simple, two-particle process. The complicated many-electron features observed during core photo-ionization can therefore reveal many of the hidden secrets about the ground and excited-state electronic structures of a material. Careful analysis of the photon-energy dependence of the Ni KLL Auger de-excitation spectra at and above t…
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The absorption of a photon and the emission of an electron is not a simple, two-particle process. The complicated many-electron features observed during core photo-ionization can therefore reveal many of the hidden secrets about the ground and excited-state electronic structures of a material. Careful analysis of the photon-energy dependence of the Ni KLL Auger de-excitation spectra at and above the Ni 1s photo-ionization threshold has identified the satellite structure that appears in both the photo-electron emission and the x-ray absorption spectra of NiO as Ni metal 3d eg -> Ni metal 3d eg and O ligand 2p eg -> Ni metal 3d eg charge-transfer excitations, respectively. These assignments elucidate the conflicting theoretical predictions of the last five decades in addition to other anomalous effects in the spectroscopy of this unique material.
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Submitted 14 May, 2018;
originally announced May 2018.
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Bulk electronic structure of non-centrosymmetric EuTGe3 (T= Co, Ni, Rh, Ir) studied by hard x-ray photoelectron spectroscopy
Authors:
Yuki Utsumi,
Deepa Kasinathan,
Przemyslaw Swatek,
Oleksandr Bednarchuk,
Dariusz Kaczorowski,
James M. Ablett,
Jean-Pascal Rueff
Abstract:
Non-centrosymmetric EuTGe3 (T=Co, Ni, Rh, and Ir) possesses magnetic Eu2+ ions and antiferromagnetic ordering appears at low temperatures. Transition metal substitution leads to changes of the unit cell volume and of the magnetic ordering. However, the magnetic ordering temperature does not scale with the volume change and the Eu valence is expected to remain divalent. Here we study the bulk elect…
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Non-centrosymmetric EuTGe3 (T=Co, Ni, Rh, and Ir) possesses magnetic Eu2+ ions and antiferromagnetic ordering appears at low temperatures. Transition metal substitution leads to changes of the unit cell volume and of the magnetic ordering. However, the magnetic ordering temperature does not scale with the volume change and the Eu valence is expected to remain divalent. Here we study the bulk electronic structure of non-centrosymmetric EuTGe3 (T=Co, Ni, Rh, and Ir) by hard x-ray photoelectron spectroscopy. The Eu 3d core level spectrum confirms the robust Eu2+ valence state against the transition metal substitution with a small contribution from Eu3+. The estimated Eu mean-valence is around 2.1 in these compounds as confirmed by multiplet calculations. In contrast, the Ge 2p spectrum shifts to higher binding energy upon changing the transition metal from 3d to 4d to 5d elements, hinting of a change in the Ge-T bonding strength. The valence bands of the different compounds are found to be well reproduced by ab initio band structure calculations.
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Submitted 13 December, 2017;
originally announced December 2017.
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Emergent high-spin state above 7 GPa in superconducting FeSe
Authors:
B. W. Lebert,
V. Balédent,
P. Toulemonde,
J. M. Ablett,
J. -P. Rueff
Abstract:
The local electronic and magnetic properties of superconducting FeSe have been investigated by K$β$ x-ray emission (XES) and simultaneous x-ray absorption spectroscopy (XAS) at the Fe K-edge at high pressure and low temperature. Our results indicate a sluggish decrease of the local Fe spin moment under pressure up to 7~GPa, in line with previous reports, followed by a sudden increase at higher pre…
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The local electronic and magnetic properties of superconducting FeSe have been investigated by K$β$ x-ray emission (XES) and simultaneous x-ray absorption spectroscopy (XAS) at the Fe K-edge at high pressure and low temperature. Our results indicate a sluggish decrease of the local Fe spin moment under pressure up to 7~GPa, in line with previous reports, followed by a sudden increase at higher pressure which has been hitherto unobserved. The magnetic surge is preceded by an abrupt change of the Fe local structure as observed by the decrease of the XAS pre-edge region intensity and corroborated by ab-initio simulations. This pressure corresponds to a structural transition, previously detected by x-ray diffraction, from the $Cmma$ form to the denser $Pbnm$ form with octahedral coordination of iron. Finally, the near-edge region of the XAS spectra shows a change before this transition at 5~GPa, corresponding well with the onset pressure of the previously observed enhancement of $T_c$. Our results emphasize the delicate interplay between structural, magnetic, and superconducting properties in FeSe under pressure.
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Submitted 8 January, 2018; v1 submitted 16 August, 2017;
originally announced August 2017.
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Vacancy-mediated fcc/bcc phase separation in Fe1-xNix ultrathin films
Authors:
T. O. Mentes,
N. Stojic,
E. Vescovo,
J. M. Ablett,
M. A. Nino,
A. Locatelli
Abstract:
The phase separation occurring in Fe-Ni thin films near the Invar composition is studied by using high-resolution spectromicroscopy techniques and density functional theory calculations. Annealed at temperatures around 300 C, Fe0.70Ni0.30 films on W(110) break into micron-sized bcc and fcc domains with compositions in agreement with the bulk Fe-Ni phase diagram. Ni is found to be the diffusing spe…
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The phase separation occurring in Fe-Ni thin films near the Invar composition is studied by using high-resolution spectromicroscopy techniques and density functional theory calculations. Annealed at temperatures around 300 C, Fe0.70Ni0.30 films on W(110) break into micron-sized bcc and fcc domains with compositions in agreement with the bulk Fe-Ni phase diagram. Ni is found to be the diffusing species in forming the chemical heterogeneity. The experimentally determined energy barrier of 1.59 +- 0.09 eV is identified as the vacancy formation energy via density functional theory calculations. Thus, the principal role of the surface in the phase separation process is attributed to vacancy creation without interstitials.
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Submitted 29 August, 2016;
originally announced August 2016.
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CeRu$_4$Sn$_6$: a strongly correlated material with nontrivial topology
Authors:
M. Sundermann,
F. Strigari,
T. Willers,
H. Winkler,
A. Prokofiev,
J. M. Ablett,
J. -P. Rueff,
D. Schmitz,
E. Weschke,
M. Moretti Sala,
A. Al-Zein,
A. Tanaka,
M. W. Haverkort,
D. Kasinathan,
L. H. Tjeng,
S. Paschen,
A. Severing
Abstract:
Topological insulators form a novel state of matter that provides new opportunities to create unique quantum phenomena. While the materials used so far are based on semiconductors, recent theoretical studies predict that also strongly correlated systems can show non-trivial topological properties, thereby allowing even the emergence of surface phenomena that are not possible with topological band…
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Topological insulators form a novel state of matter that provides new opportunities to create unique quantum phenomena. While the materials used so far are based on semiconductors, recent theoretical studies predict that also strongly correlated systems can show non-trivial topological properties, thereby allowing even the emergence of surface phenomena that are not possible with topological band insulators. From a practical point of view, it is also expected that strong correlations will reduce the disturbing impact of defects or impurities, and at the same increase the Fermi velocities of the topological surface states. The challenge is now to discover such correlated materials. Here, using advanced x-ray spectroscopies in combination with band structure calculations, we infer that CeRu$_4$Sn$_6$ is a strongly correlated material with non-trivial topology.
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Submitted 28 August, 2015;
originally announced August 2015.
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A Virtual Young's Double Slit Experiment for Hard X-ray Photons
Authors:
A. F. Isakovic,
A. Stein,
J. B. Warren,
A. R. Sandy,
S. Narayanan,
M. Sprung,
J. M. Ablett,
D. P. Siddons,
M. Metzler,
K. Evans-Lutterodt
Abstract:
We have implemented a virtual Young's double slit experiment for hard X-ray photons with micro-fabricated bi-prisms. We observe fringe patterns with a scintillator, and quantify interferograms by detecting X-ray fluorescence from a scanned 30nm Cr metal film. The observed intensities are best modeled with a near-field, Fresnel analysis. The maximum fringe number in the overlap region is proporti…
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We have implemented a virtual Young's double slit experiment for hard X-ray photons with micro-fabricated bi-prisms. We observe fringe patterns with a scintillator, and quantify interferograms by detecting X-ray fluorescence from a scanned 30nm Cr metal film. The observed intensities are best modeled with a near-field, Fresnel analysis. The maximum fringe number in the overlap region is proportional to the ratio of real to imaginary parts refractive index of the prism material. The horizontal and vertical transverse coherence lengths at beamline APS 8-ID are measured.
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Submitted 28 October, 2009;
originally announced October 2009.
