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Hop** of the center-of-mass of single G centers in silicon-on-insulator
Authors:
Alrik Durand,
Yoann Baron,
Péter Udvarhelyi,
Félix Cache,
Krithika V. R.,
Tobias Herzig,
Mario Khoury,
Sébastien Pezzagna,
Jan Meijer,
Jean-Michel Hartmann,
Shay Reboh,
Marco Abbarchi,
Isabelle Robert-Philip,
Adam Gali,
Jean-Michel Gérard,
Vincent Jacques,
Guillaume Cassabois,
Anaïs Dréau
Abstract:
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the standard Born-Oppenheimer approximation breaks down as one of its atoms can move between 6 lattice sites under optical excitation. The impact of this a…
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Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the standard Born-Oppenheimer approximation breaks down as one of its atoms can move between 6 lattice sites under optical excitation. The impact of this atomic reconfiguration on the photoluminescence properties of G centers is still largely unknown, especially in silicon-on-insulator (SOI) samples. Here, we investigate the displacement of the center-of-mass of the G center in silicon. We show that single G defects in SOI exhibit a multipolar emission and zero-phonon line fine structures with splittings up to $\sim1$ meV, both indicating a motion of the defect central atom over time. Combining polarization and spectral analysis at the single-photon level, we evidence that the reconfiguration dynamics are drastically different from the one of the unperturbed G center in bulk silicon. The SOI structure freezes the delocalization of the G defect center-of-mass and as a result, enables to isolate linearly polarized optical lines. Under above-bandgap optical excitation, the central atom of G centers in SOI behaves as if it were in a 6-slot roulette wheel, randomly alternating between localized crystal sites at each optical cycle. Comparative measurements in a bulk silicon sample and ab initio calculations highlight that strain is likely the dominant perturbation impacting the G center geometry. These results shed light on the importance of the atomic reconfiguration dynamics to understand and control the photoluminescence properties of the G center in silicon. More generally, these findings emphasize the impact of strain fluctuations inherent to SOI wafers for future quantum integrated photonics applications based on color centers in silicon.
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Submitted 23 April, 2024;
originally announced April 2024.
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Genuine and faux single G centers in carbon-implanted silicon
Authors:
Alrik Durand,
Yoann Baron,
Félix Cache,
Tobias Herzig,
Mario Khoury,
Sébastien Pezzagna,
Jan Meijer,
Jean-Michel Hartmann,
Shay Reboh,
Marco Abbarchi,
Isabelle Robert-Philip,
Jean-Michel Gérard,
Vincent Jacques,
Guillaume Cassabois,
Anaïs Dréau
Abstract:
Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around $1.28 μ$m and identified to a common carbon-complex in silicon, namely the G center. However, inconsistent estimates regarding their quantum efficiency cast doubt on the correct identification of these individual emitters. Through a comparative…
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Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around $1.28 μ$m and identified to a common carbon-complex in silicon, namely the G center. However, inconsistent estimates regarding their quantum efficiency cast doubt on the correct identification of these individual emitters. Through a comparative analysis of their single-photon emission properties, we demonstrate that these single color centers are split in two distinct families of point defects. A first family consists of the genuine single G centers with a well-identified microscopic structure and whose photoluminescence has been investigated on ensemble measurements since the 60's. The remaining defects belong to a new color center, which we will refer to as G$^{\star}$ center, whose atomic configuration has yet to be determined. These results provide a safeguard against future defect misidentifications, which is crucial for further development of quantum technologies relying on G or G$^{\star}$ center quantum properties.
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Submitted 12 February, 2024;
originally announced February 2024.
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Back-Propagation Optimization and Multi-Valued Artificial Neural Networks for Highly Vivid Structural Color Filter Metasurfaces
Authors:
Arthur Clini de Souza,
Stéphane Lanteri,
Hugo Enrique Hernandez-Figueroa,
Marco Abbarchi,
David Grosso,
Badre Kerzabi,
Mahmoud Elsawy
Abstract:
We introduce a novel technique for designing color filter metasurfaces using a data-driven approach based on deep learning. Our innovative approach employs inverse design principles to identify highly efficient designs that outperform all the configurations in the dataset, which consists of 585 distinct geometries solely. By combining Multi-Valued Artificial Neural Networks and back-propagation op…
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We introduce a novel technique for designing color filter metasurfaces using a data-driven approach based on deep learning. Our innovative approach employs inverse design principles to identify highly efficient designs that outperform all the configurations in the dataset, which consists of 585 distinct geometries solely. By combining Multi-Valued Artificial Neural Networks and back-propagation optimization, we overcome the limitations of previous approaches, such as poor performance due to extrapolation and undesired local minima. Consequently, we successfully create reliable and highly efficient configurations for metasurface color filters capable of producing exceptionally vivid colors that go beyond the sRGB gamut. Furthermore, our deep learning technique can be extended to design various pixellated metasurface configurations with different functionalities.
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Submitted 18 October, 2023; v1 submitted 2 October, 2023;
originally announced October 2023.
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Strain engineering of the electronic states of silicon-based quantum emitters
Authors:
A. Ristori,
N. Granchi,
F. Intonti,
M. Khoury,
D. Hannani,
C. M. Ruiz,
M. Salvalaglio,
A. Filippatos,
M. Amato,
T. Herzig,
J. Meijer,
S. Pezzagna,
M. Bollani,
C. Barri,
M. Abbarchi,
F. Biccari
Abstract:
Light-emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its infancy, and it was mostly focused on light extraction and guiding. Here we address the control of the electronic states of carbon-related impurities (G-centers)…
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Light-emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its infancy, and it was mostly focused on light extraction and guiding. Here we address the control of the electronic states of carbon-related impurities (G-centers) via strain engineering. By embedding them in patches of silicon on insulator and top** them with SiN, symmetry breaking along [001] and [110] directions is demonstrated, resulting in a controlled splitting of the zero phonon line (ZPL), as accounted for by the piezospectroscopic theoretical framework. The splitting can be as large as 18 meV and it is finely tuned by selecting patch size or by moving in different positions on the patch. Some of the split, strained ZPLs are almost fully polarized and their overall intensity is enhanced up to 7 times with respect to the flat areas, whereas their recombination dynamics is slightly affected. Our technique can be extended to other impurities and Si-based devices such as suspended bridges, photonic crystal microcavities, Mie resonators, and integrated photonic circuits.
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Submitted 12 June, 2023;
originally announced June 2023.
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Femtosecond laser induced creation of G and W-centers in silicon-on-insulator substrates
Authors:
Hugo Quard,
Mario Khoury,
Andong Wang,
Tobias Herzig,
Jan Meijer,
Sebastian Pezzagna,
Sébastien Cueff,
David Grojo,
Marco Abbarchi,
Hai Son Nguyen,
Nicolas Chauvin,
Thomas Wood
Abstract:
The creation of fluorescent defects in silicon is a key step** stone towards assuring the integration perspectives of quantum photonic devices into existing technologies. Here we demonstrate the creation, by femtosecond laser annealing, of W and G-centers in commercial silicon on insulator (SOI) previously implanted with 12C+ ions. Their quality is comparable to that found for the same emitters…
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The creation of fluorescent defects in silicon is a key step** stone towards assuring the integration perspectives of quantum photonic devices into existing technologies. Here we demonstrate the creation, by femtosecond laser annealing, of W and G-centers in commercial silicon on insulator (SOI) previously implanted with 12C+ ions. Their quality is comparable to that found for the same emitters obtained with conventional implant processes; as quantified by the photoluminescence radiative lifetime, the broadening of their zero-phonon line (ZPL) and the evolution of these quantities with temperature. In addition to this, we show that both defects can be created without carbon implantation and that we can erase the G-centers by annealing while enhancing the W-centers' emission. These demonstrations are relevant to the deterministic and operando generation of quantum emitters in silicon.
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Submitted 7 April, 2023;
originally announced April 2023.
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Germanium-based nearly hyperuniform nanoarchitectures by ion beam impact
Authors:
Jean-Benoit Claude,
Mohammed Bouabdellaoui,
Jerome Wenger,
Monica Bollani,
Marco Salvalaglio,
Marco Abbarchi
Abstract:
We address the fabrication of nano-architectures by impacting thin layers of amorphous Ge deposited on SiO$_{2}$ with a Ga$^{+}$ ion beam and investigate the structural and optical properties of the resulting patterns. By adjusting beam current and scanning parameters, different classes of nano-architectures can be formed, from elongated and periodic structures to disordered ones with a footprint…
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We address the fabrication of nano-architectures by impacting thin layers of amorphous Ge deposited on SiO$_{2}$ with a Ga$^{+}$ ion beam and investigate the structural and optical properties of the resulting patterns. By adjusting beam current and scanning parameters, different classes of nano-architectures can be formed, from elongated and periodic structures to disordered ones with a footprint of a few tens of nm. The latter disordered case features a significant suppression of large length scale fluctuations that are conventionally observed in ordered systems and exhibits a nearly hyperuniform character, as shown by the analysis of the spectral density at small wave vectors. It deviates from conventional random fields as accounted for by the analysis of Minkowski functionals. A proof of concept for potential applications is given by showing peculiar reflection properties of the resulting nano-structured films that exhibit colorization and enhanced light absorption with respect to the flat Ge layer counterpart (up to one order of magnitude at some wavelength). This fabrication method for disordered hyperuniform structures does not depend on the beam size. Being ion beam technology widely adopted in semiconductor foundries over 200 mm wafers, our work provides a viable pathway for obtaining disordered, nearly-hyperuniform materials by self-assembly with a footprint of tens of nanometers for electronic and photonic devices, energy storage and sensing.
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Submitted 3 February, 2023;
originally announced February 2023.
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Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring
Authors:
B. Lefaucher,
J. -B. Jager,
V. Calvo,
A. Durand,
Y. Baron,
F. Cache,
V. Jacques,
I. Robert-Philip,
G. Cassabois,
T. Herzig,
J. Meijer,
S. Pezzagna,
M. Khoury,
M. Abbarchi,
A. Dréau,
J. -M. Gérard
Abstract:
We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling between the emitters and the resonant modes of the microrings is studied using continuous-wave and time-resolved microphotoluminescence (PL) experiments. We observe the resonant modes of the microrings on PL spectra, on the wi…
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We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling between the emitters and the resonant modes of the microrings is studied using continuous-wave and time-resolved microphotoluminescence (PL) experiments. We observe the resonant modes of the microrings on PL spectra, on the wide spectral range that is covered by G centers emission. By finely tuning the size of the microrings, we match their zero-phonon line at 1278 nm with a resonant mode of quality factor around 3000 and volume 7.2 (lambda over n)^3. The zero-phonon line intensity is enhanced by a factor of 5, both in continuous-wave and time-resolved measurements. This is attributed to the Purcell enhancement of zero-phonon spontaneous emission into the resonant mode and quantitatively understood considering the distribution of the G centers dipoles. Despite the enhancement of the zero-phonon emission, we do not observe any sizeable decrease of the average lifetime of the G centers, which points at a low radiative yield (<10%). We reveal the detrimental impact of parasitic defects in heavily implanted silicon, and discuss the perspectives for quantum electrodynamics experiments with individual color centers in lightly implanted SOI rings. Our results provide key information for the development of deterministic single photon sources for integrated quantum photonics.
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Submitted 11 October, 2022;
originally announced October 2022.
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Single G centers in silicon fabricated by co-implantation with carbon and proton
Authors:
Yoann Baron,
Alrik Durand,
Tobias Herzig,
Mario Khoury,
Sébastien Pezzagna,
Jan Meijer,
Isabelle Robert-Philip,
Marco Abbarchi,
Jean-Michel Hartmann,
Shay Reboh,
Jean-Michel Gérard,
Vincent Jacques,
Guillaume Cassabois,
Anaïs Dréau
Abstract:
We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions and protons at various fluences. Decreasing the implantation fluences enables to gradually switch from large ensembles to isolated single defects, rea…
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We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions and protons at various fluences. Decreasing the implantation fluences enables to gradually switch from large ensembles to isolated single defects, reaching areal densities of G centers down to $\sim$0.2 $μ$m$^{-2}$. Single defect creation is demonstrated by photon antibunching in intensity-correlation experiments, thus establishing our approach as a reproducible procedure for generating single artificial atoms in silicon for quantum technologies.
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Submitted 28 April, 2022;
originally announced April 2022.
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Structure induced vortices control anomalous dispersion in porous media
Authors:
Ankur Deep Bordoloi,
David Scheidweiler,
Marco Dentz,
Mohammed Bouabdellaoui,
Marco Abbarchi,
Pietro de Anna
Abstract:
Natural porous systems, such as soil, membranes, and biological tissues comprise disordered structures characterized by dead-end pores connected to a network of percolating channels. The release and dispersion of particles, solutes, and microorganisms from such features is key for a broad range of environmental and medical applications including soil remediation, drug delivery and filtration. Yet,…
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Natural porous systems, such as soil, membranes, and biological tissues comprise disordered structures characterized by dead-end pores connected to a network of percolating channels. The release and dispersion of particles, solutes, and microorganisms from such features is key for a broad range of environmental and medical applications including soil remediation, drug delivery and filtration. Yet, the role of microscopic structure and flow for the dispersion of particles and solutes in such disordered systems has been only poorly understood, in part due to the stagnant and opaque nature of these microscopic systems. Here, we use a microfluidic model system that features a pore structure characterized by dead-ends to determine how particles are transported, retained and dispersed. We observe strong tailing of arrival time distributions at the outlet of the medium characterized by power-law decay with an exponent of 2/3. Using numerical simulations and an analytical model, we link this behavior to particles initially located within dead-end pores, and explain the tailing exponent with a hop** and rolling mechanism along the streamlines inside vortices within dead-end pores. These dynamics are quantified by a stochastic model that predicts the full evolution of arrival times. Our results demonstrate how microscopic flow structures can impact macroscopic particle transport.
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Submitted 23 December, 2021;
originally announced December 2021.
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Near-field Hyperspectral Imaging of Resonant Mie Modes in a Dielectric Island
Authors:
Nicoletta Granchi,
Michele Montanari,
Andrea Ristori,
Mario Khoury,
Mohammed Bouabdellaui,
Chiara Barri,
Luca Fagiani,
Massimo Gurioli,
Monica Bollani,
Marco Abbarchi,
Francesca Intonti
Abstract:
All-dielectric, sub-micrometric particles have been successfully exploited for light management in a plethora of applications at visible and near-infrared frequency. However, the investigation of the intricacies of the Mie resonances at the sub-wavelength scale has been hampered by the limitation of conventional near-field methods. Here we address spatial and spectral map** of multi-polar modes…
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All-dielectric, sub-micrometric particles have been successfully exploited for light management in a plethora of applications at visible and near-infrared frequency. However, the investigation of the intricacies of the Mie resonances at the sub-wavelength scale has been hampered by the limitation of conventional near-field methods. Here we address spatial and spectral map** of multi-polar modes of a Si island by hyper-spectral imaging. The simultaneous detection of several resonant modes allows to clarify the role of substrate and incidence angle of the im**ing light, highlighting spectral splitting of the quadrupolar mode and resulting in different spatial features of the field intensity. We explore theoretically and experimentally such spatial features. Details as small as 200 nm can be detected and are in agreement with simulations based on a Finite Difference Time Domain method. Our results are relevant to near-field imaging of dielectric structures, to the comprehension of the photophysics of resonant Mie structures, to beam steering and to the resonant coupling with light emitters. Our analysis paves the way for a novel approach to control the spatial overlap of a single emitter with localized electric field maxima.
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Submitted 31 August, 2021;
originally announced August 2021.
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Detection of single W-centers in silicon
Authors:
Yoann Baron,
Alrik Durand,
Péter Udvarhelyi,
Tobias Herzig,
Mario Khoury,
Sébastien Pezzagna,
Jan Meijer,
Isabelle Robert-Philip,
Marco Abbarchi,
Jean-Michel Hartmann,
Vincent Mazzocchi,
Jean-Michel Gérard,
Adam Gali,
Vincent Jacques,
Guillaume Cassabois,
Anaïs Dréau
Abstract:
Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts have so far focused on extrinsic defects based on impurities incorporated inside the silicon lattice. Here we demonstrate the detection of single intrinsic defects in silicon, which are linked to a tri-interstitial compl…
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Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts have so far focused on extrinsic defects based on impurities incorporated inside the silicon lattice. Here we demonstrate the detection of single intrinsic defects in silicon, which are linked to a tri-interstitial complex called W-center, with a zero-phonon line at 1.218$μ$m. Investigating their single-photon emission properties reveals new information about this common radiation damage center, such as its dipolar orientation and its photophysics. We also identify its microscopic structure and show that although this defect does not feature electronic states in the bandgap, Coulomb interactions lead to excitonic radiative recombination below the silicon bandgap. These results could set the stage for numerous quantum perspectives based on intrinsic luminescent defects in silicon, such as quantum integrated photonics, quantum communications and quantum sensing.
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Submitted 28 April, 2022; v1 submitted 9 August, 2021;
originally announced August 2021.
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Preventing Corrosion of Aluminum Metal with Nanometer-Thick Films of Al2O3 Capped with TiO2 for Ultraviolet Plasmonics
Authors:
Prithu Roy,
Clémence Badie,
Jean-Benoît Claude,
Aleksandr Barulin,
Antonin Moreau,
Julien Lumeau,
Marco Abbarchi,
Lionel Santinacci,
Jérôme Wenger
Abstract:
Extending plasmonics into the ultraviolet range imposes the use of aluminum to achieve the best optical performance. However, water corrosion is a major limiting issue for UV aluminum plasmonics, as this phenomenon occurs significantly faster in presence of UV light, even at low laser powers of a few microwatts. Here we assess the performance of nanometer-thick layers of various metal oxides depos…
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Extending plasmonics into the ultraviolet range imposes the use of aluminum to achieve the best optical performance. However, water corrosion is a major limiting issue for UV aluminum plasmonics, as this phenomenon occurs significantly faster in presence of UV light, even at low laser powers of a few microwatts. Here we assess the performance of nanometer-thick layers of various metal oxides deposited by atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD) on top of aluminum nanoapertures to protect the metal against UV photocorrosion. The combination of a 5 nm Al2O3 layer covered by a 5 nm TiO2 cap** provides the best resistance performance, while a single 10 nm layer of SiO2 or HfO2 is a good alternative. We also report the influence of the laser wavelength, the laser operation mode and the pH of the solution. Properly choosing these conditions significantly extends the range of optical powers for which the aluminum nanostructures can be used. As application, we demonstrate the label-free detection of streptavidin proteins with improved signal to noise ratio. Our approach is also beneficial to promote the long-term stability of the aluminum nanostructures. Finding the appropriate nanoscale protection against aluminum corrosion is the key to enable the development of UV plasmonic applications in chemistry and biology.
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Submitted 17 June, 2021;
originally announced June 2021.
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Titania-Based Spherical Mie Resonators Elaborated by High-Throughput Aerosol Spray: Single Object Investigation
Authors:
Simona Checcucci,
Thomas Bottein,
Jean-Benoit Claude,
Thomas Wood,
Magali Putero,
Luc Favre,
Massimo Gurioli,
Marco Abbarchi,
David Grosso
Abstract:
In the framework of photonics with all-dielectric nanoantennas, sub-micro-metric spheres can be exploited for a plethora of applications including vanishing back-scattering, enhanced directivity of a light emitter, beam steering, and large Purcell factors. Here, the potential of a high-throughput fabrication method based on aerosol-spray is shown to form quasi-perfect sub-micrometric spheres of po…
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In the framework of photonics with all-dielectric nanoantennas, sub-micro-metric spheres can be exploited for a plethora of applications including vanishing back-scattering, enhanced directivity of a light emitter, beam steering, and large Purcell factors. Here, the potential of a high-throughput fabrication method based on aerosol-spray is shown to form quasi-perfect sub-micrometric spheres of polycrystalline TiO 2 . Spectroscopic investigation of light scattering from individual particles reveals sharp resonances in agreement with Mie theory, neat structural colors, and a high directivity. Owing to the high permittivity and lossless material in use, this method opens the way toward the implementation of isotropic meta-materials and forward-directional sources with magnetic responses at visible and near-UV frequencies, not accessible with conventional Si- and Ge-based Mie resonators.
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Submitted 28 March, 2021;
originally announced March 2021.
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Broad diversity of near-infrared single-photon emitters in silicon
Authors:
A. Durand,
Y. Baron,
W. Redjem,
T. Herzig,
A. Benali,
S. Pezzagna,
J. Meijer,
A. Yu. Kuznetsov,
J. -M. Gérard,
I. Robert-Philip,
M. Abbarchi,
V. Jacques,
G. Cassabois,
A. Dréau
Abstract:
We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the [1.1,1.55]-$μ$m range, spanning the O- and C-telecom bands. We analyse the…
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We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the [1.1,1.55]-$μ$m range, spanning the O- and C-telecom bands. We analyse their photoluminescence spectrum, dipolar emission and optical relaxation dynamics at 10K. For a specific family, we show a constant emission intensity at saturation from 10K to temperatures well above the 77K-liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these novel artificial atoms are promising candidates for Si-based quantum technologies.
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Submitted 23 October, 2020; v1 submitted 21 October, 2020;
originally announced October 2020.
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Single artificial atoms in silicon emitting at telecom wavelengths
Authors:
W. Redjem,
A. Durand,
T. Herzig,
A. Benali,
S. Pezzagna,
J. Meijer,
A. Yu. Kuznetsov,
H. S. Nguyen,
S. Cueff,
J. -M. Gérard,
I. Robert-Philip,
B. Gil,
D. Caliste,
P. Pochet,
M. Abbarchi,
V. Jacques,
A. Dréau,
G. Cassabois
Abstract:
Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface needed for large-distance exch…
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Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface needed for large-distance exchange of information have not yet been isolated in such a prevailing semiconductor. Here we show the isolation of single optically-active point defects in a commercial silicon-on-insulator wafer implanted with carbon atoms. These artificial atoms exhibit a bright, linearly polarized single-photon emission at telecom wavelengths suitable for long-distance propagation in optical fibers. Our results demonstrate that despite its small bandgap (~ 1.1 eV) a priori unfavorable towards such observation, silicon can accommodate point defects optically isolable at single scale, like in wide-bandgap semiconductors. This work opens numerous perspectives for silicon-based quantum technologies, from integrated quantum photonics to quantum communications and metrology.
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Submitted 7 January, 2020;
originally announced January 2020.
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Hyperuniform monocrystalline structures by spinodal solid-state dewetting
Authors:
Marco Salvalaglio,
Mohammed Bouabdellaoui,
Monica Bollani,
Abdennacer Benali,
Luc Favre,
Jean-Benoit Claude,
Jerome Wenger,
Pietro de Anna,
Francesca Intonti,
Axel Voigt,
Marco Abbarchi
Abstract:
Materials featuring anomalous suppression of density fluctuations over large length scales are emerging systems known as disordered hyperuniform. The underlying hidden order renders them appealing for several applications, such as light management and topologically protected electronic states. These applications require scalable fabrication, which is hard to achieve with available top-down approac…
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Materials featuring anomalous suppression of density fluctuations over large length scales are emerging systems known as disordered hyperuniform. The underlying hidden order renders them appealing for several applications, such as light management and topologically protected electronic states. These applications require scalable fabrication, which is hard to achieve with available top-down approaches. Theoretically, it is known that spinodal decomposition can lead to disordered hyperuniform architectures. Spontaneous formation of stable patterns could thus be a viable path for the bottom-up fabrication of these materials. Here we show that mono-crystalline semiconductor-based structures, in particular Si$_{1-x}$Ge$_{x}$ layers deposited on silicon-on-insulator substrates, can undergo spinodal solid-state dewetting featuring correlated disorder with an effective hyperuniform character. Nano- to micro-metric sized structures targeting specific morphologies and hyperuniform character can be obtained, proving the generality of the approach and paving the way for technological applications of disordered hyperuniform metamaterials. Phase-field simulations explain the underlying non-linear dynamics and the physical origin of the emerging patterns.
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Submitted 18 July, 2020; v1 submitted 5 December, 2019;
originally announced December 2019.
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Optical properties of an ensemble of G-centers in silicon
Authors:
C. Beaufils,
W. Redjem,
E. Rousseau,
V. Jacques,
A. Yu. Kuznetsov,
C. Raynaud,
C. Voisin,
A. Benali,
T. Herzig,
S. Pezzagna,
J. Meijer,
M. Abbarchi,
G. Cassabois
Abstract:
We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this point defect in silicon emitting in the telecommunication wavelength range, we unravel the recombination dynamics by time-resolved photoluminescence spectroscopy.…
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We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this point defect in silicon emitting in the telecommunication wavelength range, we unravel the recombination dynamics by time-resolved photoluminescence spectroscopy. More specifically, we performed detailed photoluminescence experiments as a function of excitation energy, incident power, irradiation fluence and temperature in order to study the impact of radiative and non-radiative recombination channels on the spectrum, yield and lifetime of G-centers. The sharp line emitting at 969 meV ($\sim$1280 nm) and the broad asymmetric sideband develo** at lower energy share the same recombination dynamics as shown by time-resolved experiments performed selectively on each spectral component. This feature accounts for the common origin of the two emission bands which are unambiguously attributed to the zero-phonon line and to the corresponding phonon sideband. In the framework of the Huang-Rhys theory with non-perturbative calculations, we reach an estimation of 1.6$\pm$0.1 $\angstrom$ for the spatial extension of the electronic wave function in the G-center. The radiative recombination time measured at low temperature lies in the 6 ns-range. The estimation of both radiative and non-radiative recombination rates as a function of temperature further demonstrate a constant radiative lifetime. Finally, although G-centers are shallow levels in silicon, we find a value of the Debye-Waller factor comparable to deep levels in wide-bandgap materials. Our results point out the potential of G-centers as a solid-state light source to be integrated into opto-electronic devices within a common silicon platform.
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Submitted 13 July, 2017;
originally announced August 2017.
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Germanium-based quantum emitters for time-reordering entanglement scheme with degenerate exciton and biexciton states
Authors:
Nicola Dotti,
Francesco Sarti,
Sergio Bietti,
Alexander Azarov,
Andrej Kuznetsov,
Francesco Biccari,
Anna Vinattieri,
Stefano Sanguinetti,
Marco Abbarchi,
Massimo Gurioli
Abstract:
We address the photoluminescence emission of individual germanium extrinsic centers in Al_0.3Ga0.7As epilayers grown on germanium substrates. Through a thorough analysis of micro-photoluminescence experiments we demonstrate the capability of high temperature emission (70 K) and multiexcitonic features (neutral exciton X, biexciton XX, positive X+ and negative X- charged exciton) of these quantum e…
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We address the photoluminescence emission of individual germanium extrinsic centers in Al_0.3Ga0.7As epilayers grown on germanium substrates. Through a thorough analysis of micro-photoluminescence experiments we demonstrate the capability of high temperature emission (70 K) and multiexcitonic features (neutral exciton X, biexciton XX, positive X+ and negative X- charged exciton) of these quantum emitters. Finally, we investigate the renormalization of each energy level showing a large and systematic change of the binding energy of XX and X+ from positive to negative values (from ~+5 meV up to ~-7 meV covering about ~ 70 meV of the emission energy) with increasing quantum confinement. These light emitters exhibiting energy-degenerate X and XX energy levels at ~1.855 eV (680 nm) are a promising resource for the generation of entangled photons in the time-reordering scheme on a silicon platform.
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Submitted 23 March, 2015; v1 submitted 15 December, 2014;
originally announced December 2014.
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Engineering spin-orbit coupling for photons and polaritons in microstructures
Authors:
V. G. Sala,
D. D. Solnyshkov,
I. Carusotto,
T. Jacqmin,
A. Lemaître,
H. Terças,
A. Nalitov,
M. Abbarchi,
E. Galopin,
I. Sagnes,
J. Bloch,
G. Malpuech,
A. Amo
Abstract:
One of the most fundamental properties of electromagnetism and special relativity is the coupling between the spin of an electron and its orbital motion. This is at the origin of the fine structure in atoms, the spin Hall effect in semiconductors, and underlies many intriguing properties of topological insulators, in particular their chiral edge states. Configurations where neutral particles exper…
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One of the most fundamental properties of electromagnetism and special relativity is the coupling between the spin of an electron and its orbital motion. This is at the origin of the fine structure in atoms, the spin Hall effect in semiconductors, and underlies many intriguing properties of topological insulators, in particular their chiral edge states. Configurations where neutral particles experience an effective spin-orbit coupling have been recently proposed and realized using ultracold atoms and photons. Here we use coupled micropillars etched out of a semiconductor microcavity to engineer a spin-orbit Hamiltonian for photons and polaritons in a microstructure. The coupling between the spin and orbital momentum arises from the polarisation dependent confinement and tunnelling of photons between micropillars arranged in the form of a hexagonal photonic molecule. Dramatic consequences of the spin-orbit coupling are experimentally observed in these structures in the wavefunction of polariton condensates, whose helical shape is directly visible in the spatially resolved polarisation patterns of the emitted light. The strong optical nonlinearity of polariton systems suggests exciting perspectives for using quantum fluids of polaritons11 for quantum simulation of the interplay between interactions and spin-orbit coupling.
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Submitted 18 June, 2014;
originally announced June 2014.
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Direct observation of Dirac cones and a flatband in a honeycomb lattice for polaritons
Authors:
Thibaut Jacqmin,
Iacopo Carusotto,
Isabelle Sagnes,
Marco Abbarchi,
Dmitry Solnyshkov,
Guillaume Malpuech,
Elisabeth Galopin,
Aristide Lemaître,
Jacqueline Bloch,
Alberto Amo
Abstract:
Two-dimensional lattices of coupled micropillars etched in a planar semiconductor microcavity offer a workbench to engineer the band structure of polaritons. We report experimental studies of honeycomb lattices where the polariton low-energy dispersion is analogous to that of electrons in graphene. Using energy-resolved photoluminescence we directly observe Dirac cones, around which the dynamics o…
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Two-dimensional lattices of coupled micropillars etched in a planar semiconductor microcavity offer a workbench to engineer the band structure of polaritons. We report experimental studies of honeycomb lattices where the polariton low-energy dispersion is analogous to that of electrons in graphene. Using energy-resolved photoluminescence we directly observe Dirac cones, around which the dynamics of polaritons is described by the Dirac equation for massless particles. At higher energies, we observe p orbital bands, one of them with the nondispersive character of a flatband. The realization of this structure which holds massless, massive and infinitely massive particles opens the route towards studies of the interplay of dispersion, interactions, and frustration in a novel and controlled environment.
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Submitted 4 March, 2014; v1 submitted 30 October, 2013;
originally announced October 2013.
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Macroscopic quantum self-trap** and Josephson oscillations of exciton-polaritons
Authors:
M. Abbarchi,
A. Amo,
V. G. Sala,
D. D. Solnyshkov,
H. Flayac,
L. Ferrier,
I. Sagnes,
E. Galopin,
A. Lemaitre,
G. Malpuech,
J. Bloch
Abstract:
A textbook example of quantum mechanical effects is the coupling of two states through a tunnel barrier. In the case of macroscopic quantum states subject to interactions, the tunnel coupling gives rise to Josephson phenomena including Rabi oscillations, the a.c. and d.c. effects, or macroscopic self-trap** depending on whether tunnelling or interactions dominate. Non-linear Josephson physics, o…
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A textbook example of quantum mechanical effects is the coupling of two states through a tunnel barrier. In the case of macroscopic quantum states subject to interactions, the tunnel coupling gives rise to Josephson phenomena including Rabi oscillations, the a.c. and d.c. effects, or macroscopic self-trap** depending on whether tunnelling or interactions dominate. Non-linear Josephson physics, observed in superfluid helium and atomic condensates, has remained inaccessible in photonic systems due to the required effective photon-photon interactions. We report on the observation of non-linear Josephson oscillations of two coupled polariton condensates confined in a photonic molecule etched in a semiconductor microcavity. By varying both the distance between the micropillars forming the molecule and the condensate density in each micropillar, we control the ratio of coupling to interaction energy. At low densities we observe coherent oscillations of particles tunnelling between the two micropillars. At high densities, interactions quench the transfer of particles inducing the macroscopic self-trap** of the condensate in one of the micropillars. The finite lifetime of polaritons results in a dynamical transition from self-trap** to oscillations with pi phase. Our results open the way to the experimental study of highly non-linear regimes in photonic systems, such as chaos or symmetry-breaking bifurcations.
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Submitted 21 December, 2012;
originally announced December 2012.
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Photo-draining and slow capture of carriers in quantum dots probed by resonant excitation spectroscopy
Authors:
Hai Son Nguyen,
Gregory Sallen,
Marco Abbarchi,
Robson Ferreira,
Christophe Voisin,
Philippe Roussignol,
Guillaume Cassabois,
Carole Diederichs
Abstract:
We investigate experimentally and theoretically the resonant emission of single InAs/GaAs quantum dots in a planar microcavity. Due to the presence of at least one residual charge in the quantum dots, the resonant excitation of the neutral exciton is blocked. The influence of the residual do** on the initial quantum dots charge state is analyzed, and the resonant emission quenching is interprete…
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We investigate experimentally and theoretically the resonant emission of single InAs/GaAs quantum dots in a planar microcavity. Due to the presence of at least one residual charge in the quantum dots, the resonant excitation of the neutral exciton is blocked. The influence of the residual do** on the initial quantum dots charge state is analyzed, and the resonant emission quenching is interpreted as a Coulomb blockade effect. The use of an additional non-resonant laser in a specific low power regime leads to the carrier draining in quantum dots and allows an efficient optical gating of the exciton resonant emission. A detailed population evolution model, developed to describe the carrier draining and the optical gate effect, perfectly fits the experimental results in the steady state and dynamical regimes of the optical gate with a single set of parameters. We deduce that ultra-slow Auger- and phonon-assisted capture processes govern the carrier draining in quantum dots with relaxation times in the 1 - 100 microsecond range. We conclude that the optical gate acts as a very sensitive probe of the quantum dots population relaxation in an unprecedented slow-capture regime.
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Submitted 8 February, 2013; v1 submitted 13 December, 2012;
originally announced December 2012.
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Dark-bright mixing of interband transitions in symmetric semiconductor quantum dots
Authors:
G. Sallen,
B. Urbaszek,
M. M. Glazov,
E. L. Ivchenko,
T. Kuroda,
T. Mano,
S. Kunz,
M. Abbarchi,
K. Sakoda,
D. Lagarde,
A. Balocchi,
X. Marie,
T. Amand
Abstract:
In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis we observe in addition to the expected bright states also nominally dark transitions for both charged and neutral excitons. We uncover a strongly non-monotonous, sign changing field dependence of the bright neutral exciton splitting resulting from the interpl…
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In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis we observe in addition to the expected bright states also nominally dark transitions for both charged and neutral excitons. We uncover a strongly non-monotonous, sign changing field dependence of the bright neutral exciton splitting resulting from the interplay between exchange and Zeeman effects. Our theory shows quantitatively that these surprising experimental results are due to magnetic-field-induced \pm 3/2 heavy-hole mixing, an inherent property of systems with C_3v point-group symmetry.
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Submitted 30 June, 2011;
originally announced June 2011.
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Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots
Authors:
Thomas Belhadj,
Thierry Amand,
Alejandro Kunold,
Claire-Marie Simon,
T. Kuroda,
M. Abbarchi,
T. Mano,
K. Sakoda,
Sergej Kunz,
Xavier Marie,
Bernhard Urbaszek
Abstract:
We report strong heavy hole-light mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free system. By fitting the polar diagram of the emission with simple analytical expressions obtained from k$\cdot$p theory we are able to extract the mixing that arises…
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We report strong heavy hole-light mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free system. By fitting the polar diagram of the emission with simple analytical expressions obtained from k$\cdot$p theory we are able to extract the mixing that arises from the heavy-light hole coupling due to the geometrical asymmetry of the quantum dot.
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Submitted 2 June, 2010;
originally announced June 2010.
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Bunching visibility for correlated photons from single GaAs quantum dots
Authors:
T. Kuroda,
T. Belhadj,
M. Abbarchi,
C. Mastrandrea,
M. Gurioli,
T. Mano,
N. Ikeda,
Y. Sugimoto,
K. Asakawa,
N. Koguchi,
K. Sakoda,
B. Urbaszek,
T. Amand,
X. Marie
Abstract:
We study photon bunching phenomena associated with biexciton-exciton cascade in single GaAs self-assembled quantum dots. Experiments carried out with a pulsed excitation source show that significant bunching is only detectable at very low excitation, where the typical intensity of photon streams is less than the half of their saturation value. Our findings are qualitatively understood with a mod…
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We study photon bunching phenomena associated with biexciton-exciton cascade in single GaAs self-assembled quantum dots. Experiments carried out with a pulsed excitation source show that significant bunching is only detectable at very low excitation, where the typical intensity of photon streams is less than the half of their saturation value. Our findings are qualitatively understood with a model which accounts for Poissonian statistics in the number of excitons, predicting the height of a bunching peak being determined by the inverse of probability of finding more than one exciton.
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Submitted 19 November, 2008;
originally announced November 2008.
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Photon correlation in GaAs self-assembled quantum dots
Authors:
T. Kuroda,
M. Abbarchi,
T. Mano,
K. Watanabe,
M. Yamagiwa,
K. Kuroda,
K. Sakoda,
G. Kido,
N. Koguchi,
C. Mastrandrea,
L. Cavigli,
M. Gurioli,
Y. Ogawa,
F. Minami
Abstract:
We report on photon coincidence measurement in a single GaAs self-assembled quantum dot (QD) using a pulsed excitation light source. At low excitation, when a neutral exciton line was present in the photoluminescence (PL) spectrum, we observed nearly perfect single photon emission from an isolated QD at 670 nm wavelength. For higher excitation, multiple PL lines appeared on the spectra, reflecti…
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We report on photon coincidence measurement in a single GaAs self-assembled quantum dot (QD) using a pulsed excitation light source. At low excitation, when a neutral exciton line was present in the photoluminescence (PL) spectrum, we observed nearly perfect single photon emission from an isolated QD at 670 nm wavelength. For higher excitation, multiple PL lines appeared on the spectra, reflecting the formation of exciton complexes. Cross-correlation functions between these lines showed either bunching or antibunching behavior, depending on whether the relevant emission was from a biexciton cascade or a charged exciton recombination.
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Submitted 15 April, 2008;
originally announced April 2008.
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Notes on the bunching peak of g(2) functions for correlated photons from single quantum dots
Authors:
T. Kuroda,
C. Mastransdrea,
M. Abbarchi,
M. Gurioli
Abstract:
Second-order correlation functions for photon pulses associated with exciton-biexciton cascades are theoretically derived. A finite efficiency in photon detection and statistical distribution in exciton numbers are taken into account. It is found that the bunching peak height of photon statistics (g(2)(0)) depends on the mean number of excitons, N, and significant bunching is only detectable at…
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Second-order correlation functions for photon pulses associated with exciton-biexciton cascades are theoretically derived. A finite efficiency in photon detection and statistical distribution in exciton numbers are taken into account. It is found that the bunching peak height of photon statistics (g(2)(0)) depends on the mean number of excitons, N, and significant bunching is only detectable at very low excitation, N<<2.
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Submitted 16 January, 2008;
originally announced January 2008.
