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Infrared Nanoimaging of Hydrogenated Perovskite Nickelate Synaptic Devices
Authors:
Sampath Gamage,
Sukriti Manna,
Marc Zajac,
Steven Hancock,
Qi Wang,
Sarabpreet Singh,
Mahdi Ghafariasl,
Kun Yao,
Tom Tiwald,
Tae Joon Park,
David P. Landau,
Haidan Wen,
Subramanian Sankaranarayanan,
Pierre Darancet,
Shriram Ramanathan,
Yohannes Abate
Abstract:
Solid-state devices made from correlated oxides such as perovskite nickelates are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehending dopant action at the nanoscale poses a formidable challenge to understanding the elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium nick…
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Solid-state devices made from correlated oxides such as perovskite nickelates are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehending dopant action at the nanoscale poses a formidable challenge to understanding the elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium nickel oxide (H-NdNiO3) devices and reveal how an applied field perturbs dopant distribution at the nanoscale. This perturbation leads to stripe phases of varying conductivity perpendicular to the applied field, which define the macroscale electrical characteristics of the devices. Hyperspectral nano-FTIR imaging in conjunction with density functional theory calculations unveil a real-space map of multiple vibrational states of H-NNO associated with OH stretching modes and their dependence on the dopant concentration. Moreover, the localization of excess charges induces an out-of-plane lattice expansion in NNO which was confirmed by in-situ - x-ray diffraction and creates a strain that acts as a barrier against further diffusion. Our results and the techniques presented here hold great potential to the rapidly growing field of memristors and neuromorphic devices wherein nanoscale ion motion is fundamentally responsible for function.
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Submitted 29 August, 2023;
originally announced September 2023.
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Sulfur Vacancy Related Optical Transitions in Graded Alloys of MoxW1-xS2 Monolayers
Authors:
Mahdi Ghafariasl,
Tianyi Zhang,
Zachary D. Ward,
Da Zhou,
David Sanchez,
Venkataraman Swaminathan,
Humberto Terrones,
Mauricio Terrones,
Yohannes Abate
Abstract:
Engineering the electronic bandgap is of utmost importance in diverse domains ranging from information processing and communication technology to sensing and renewable energy applications. Transition metal dichalcogenides (TMDCs) provide an ideal platform for achieving this goal through techniques including alloying, do**, and creating in-plane or out-of-plane heterostructures. Here, we report o…
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Engineering the electronic bandgap is of utmost importance in diverse domains ranging from information processing and communication technology to sensing and renewable energy applications. Transition metal dichalcogenides (TMDCs) provide an ideal platform for achieving this goal through techniques including alloying, do**, and creating in-plane or out-of-plane heterostructures. Here, we report on the synthesis and characterization of atomically controlled two-dimensional graded alloy of MoxW1-xS2, wherein the center region is Mo rich and gradually transitions towards a higher concentration of W atoms at the edges. This unique alloy structure leads to a continuously tunable bandgap, ranging from 1.85 eV in the center to 1.95 eV at the edges consistent with the larger band gap of WS2 relative to MoS2. Aberration-corrected high-angle annular dark-field scanning transmission electron microscopy showed the presence of sulfur monovacancy, VS, whose concentration varied across the graded MoxW1-xS2 layer as a function of Mo content with the highest value in the Mo rich center region. Optical spectroscopy measurements supported by ab initio calculations reveal a doublet electronic state of VS, which was split due to the spin-orbit interaction, with energy levels close to the conduction band or deep in the band gap depending on whether the vacancy is surrounded by W atoms or Mo atoms. This unique electronic configuration of VS in the alloy gave rise to four spin-allowed optical transitions between the VS levels and the valence bands. Our work highlights the potential of simultaneous defect and optical engineering of novel devices based on these 2D monolayers.
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Submitted 28 August, 2023;
originally announced August 2023.
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Photodegradation and Thermal Effects in Violet Phosphorus
Authors:
Mahdi Ghafariasl,
Sarabpreet Singh,
Sampath Gamage,
Timothy Prusnick,
Michael Snure,
Yohannes Abate
Abstract:
Violet phosphorus (VP) has garnered attention for its appealing physical properties and potential applications in optoelectronics. We present a comprehensive investigation of the photo-degradation and thermal effects of exfoliated VP on SiO2 substrate. The degradation rate of VP was found to be strongly influenced by the excitation wavelength and light exposure duration. Light exposure to the abov…
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Violet phosphorus (VP) has garnered attention for its appealing physical properties and potential applications in optoelectronics. We present a comprehensive investigation of the photo-degradation and thermal effects of exfoliated VP on SiO2 substrate. The degradation rate of VP was found to be strongly influenced by the excitation wavelength and light exposure duration. Light exposure to the above bandgap (λ > 532 nm) leads to faster degradation, attributed to interactions with reactive oxygen species. Power-dependent photoluminescence (PL) measurements at low temperature (T=4 K) showed neutral exciton (X0) and trion (T) intensities linearly increased with excitation power, while the energy difference between their peak energies decreased, indicating changes in the exciton energy gap due to degradation. At room temperature X0 and T peaks were observed with higher X0 spectral weight, indicating reduced thermal stability of T. As the temperature decreased to 4 K, both X0 and T emissions intensified with blue-shifted peak positions. The T/X0 spectral weight ratio increased from 0.28 at 300 K to 0.69 at 4 K, suggesting enhanced T formation due to reduced phonon scattering. Temperature-dependent Raman spectroscopy revealed the presence of VP up to 673K. By tracking the peak position of 9 Raman modes with temperature the linear first-order temperature coefficient were obtained and found to be linear for all modes up to 673 K. Our results provide a deeper understanding of VP's degradation behavior and implications for optoelectronic applications.
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Submitted 23 September, 2023; v1 submitted 7 July, 2023;
originally announced July 2023.
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Substrate Induced van der Waals Force Effect on the Stability of Violet Phosphorous
Authors:
Sarabpreet Singh,
Mahdi Ghafariasl,
Hsin-Yu Ko,
Sampath Gamage,
Robert A. Distasio Jr.,
Michael Snure,
Yohannes Abate
Abstract:
The van der Waals (vdWs) forces between monolayers has been a unique distinguishing feature of exfoliable materials since the first isolation of graphene. However, the vdWs interaction of exfoliable materials with their substrates and how this interface force influences their interaction with the environment is yet to be well understood.Here, we experimentally and theoretically unravel the role of…
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The van der Waals (vdWs) forces between monolayers has been a unique distinguishing feature of exfoliable materials since the first isolation of graphene. However, the vdWs interaction of exfoliable materials with their substrates and how this interface force influences their interaction with the environment is yet to be well understood.Here, we experimentally and theoretically unravel the role of vdWs forces between the recently rediscovered wide band gap p-type vdW semiconductor violet phosphorus (VP), with various substrates (including, SiO$_2$, mica, Si, Au) and quantify how VP stability in air and its interaction with its surroundings is influenced by the interface force.Using a combination of infrared nanoimaging and theoretical modeling we find the vdWs force at the interface to be a main factor that influences how VP interacts with its surroundings.In addition, the hydrophobicity of the substrate and the substrate surface roughness modify the vdWs force there by influencing VP stability. Our results could guide in the selection of substrates when vdW materials are prepared and more generally highlight the key role of interface force effects that could significantly alter physical properties of vdWs materials.
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Submitted 30 June, 2023;
originally announced June 2023.
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Self-Assembled Periodic Nanostructures Using Martensitic Phase Transformations
Authors:
Abhinav Prakash,
Tianqi Wang,
Ashley Bucsek,
Tristan K. Truttmann,
Alireza Fali,
Michele Cotrufo,
Hwanhui Yun,
Jong-Woo Kim,
Philip J. Ryan,
K. Andre Mkhoyan,
Andrea Alu,
Yohannes Abate,
Richard D. James,
Bharat Jalan
Abstract:
We describe a novel approach for the rational design and synthesis of self-assembled periodic nanostructures using martensitic phase transformations. We demonstrate this approach in a thin film of perovskite SrSnO3 with reconfigurable periodic nanostructures consisting of regularly spaced regions of sharply contrasted dielectric properties. The films can be designed to have different periodicities…
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We describe a novel approach for the rational design and synthesis of self-assembled periodic nanostructures using martensitic phase transformations. We demonstrate this approach in a thin film of perovskite SrSnO3 with reconfigurable periodic nanostructures consisting of regularly spaced regions of sharply contrasted dielectric properties. The films can be designed to have different periodicities and relative phase fractions via chemical do** or strain engineering. The dielectric contrast within a single film can be tuned using temperature and laser wavelength, effectively creating a variable photonic crystal. Our results show the realistic possibility of designing large-area self-assembled periodic structures using martensitic phase transformations with the potential of implementing "built-to-order" nanostructures for tailored optoelectronic functionalities.
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Submitted 13 September, 2020;
originally announced September 2020.
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Photo-degradation Protection in 2D In-Plane Heterostructures Revealed by Hyperspectral Nanoimaging: the Role of Nano-Interface 2D Alloys
Authors:
Alireza Fali,
Tianyi Zhang,
Jason Patrick Terry,
Ethan Kahn,
Kazunori Fujisawa,
Sandhaya Koirala,
Yassamin Ghafouri,
Wenshen Song,
Li Yang,
Mauricio Terrones,
Yohannes Abate
Abstract:
Single-layer heterostructures exhibit striking quasiparticle properties and many-body interaction effects that hold promise for a range of applications. However, their properties can be altered by intrinsic and extrinsic defects, thus diminishing their applicability. Therefore, it is of paramount importance to identify defects and understand 2D materials' degradation over time using advanced multi…
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Single-layer heterostructures exhibit striking quasiparticle properties and many-body interaction effects that hold promise for a range of applications. However, their properties can be altered by intrinsic and extrinsic defects, thus diminishing their applicability. Therefore, it is of paramount importance to identify defects and understand 2D materials' degradation over time using advanced multimodal imaging techniques as well as stabilize degradation via built-in interface protection. Here we implemented a liquid-phase precursor approach to synthesize 2D in-plane MoS2-WS2 heterostructures exhibiting nanoscale alloyed interfaces and map exotic interface effects during photo-degradation using a novel combination of hyperspectral tip-enhanced photoluminescence, Raman and near-field nanoscopy. Surprisingly, 2D alloyed regions exhibit remarkable thermal and photo-degradation stability providing protection against oxidation. Coupled with surface and interface strain, 2D alloy regions create localized potential wells that concentrate excitonic species via a charge carrier funneling effect. These results provide a clear understanding of the importance of 2D alloys as systems able to withstand degradation effects over time, and could be now used to stabilize optoelectronic devices based on 2D materials.
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Submitted 22 May, 2020;
originally announced May 2020.
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Refractive Index-Based Control of Hyperbolic Phonon-Polariton Propagation
Authors:
Alireza Fali,
Samuel T. White,
Thomas G. Folland,
Mingze. He,
Neda A. Aghamiri,
Song Liu,
James H. Edgar,
Joshua D. Caldwell,
Richard F. Haglund,
Yohannes Abate
Abstract:
Hyperbolic phonon polaritons (HPhPs) are generated when infrared photons couple to polar optic phonons in anisotropic media, confining long-wavelength light to nanoscale volumes. However, to realize the full potential of HPhPs for infrared optics, it is crucial to understand propagation and loss mechanisms on substrates suitable for applications from waveguiding to infrared sensing. In this paper,…
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Hyperbolic phonon polaritons (HPhPs) are generated when infrared photons couple to polar optic phonons in anisotropic media, confining long-wavelength light to nanoscale volumes. However, to realize the full potential of HPhPs for infrared optics, it is crucial to understand propagation and loss mechanisms on substrates suitable for applications from waveguiding to infrared sensing. In this paper, we employ scattering-type scanning near-field optical microscopy (s-SNOM) and nano-Fourier transform infrared (FTIR) spectroscopy, in concert with analytical and numerical calculations, to elucidate HPhP characteristics as a function of the complex substrate dielectric function. We consider propagation on suspended, dielectric and metallic substrates to demonstrate that the thickness-normalized wavevector can be reduced by a factor of 25 simply by changing the substrate from dielectric to metallic behavior. Moreover, by incorporating the imaginary contribution to the dielectric function in lossy materials, the wavevector can be dynamically controlled by small local variations in loss or carrier density. Such effects may therefore be used to spatially separate hyperbolic modes of different orders, and indicates that for index-based sensing schemes that HPhPs can be more sensitive than surface polaritons in the thin film limit. Our results advance our understanding of fundamental polariton excitations and their potential for on-chip photonics and planar metasurface optics.
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Submitted 3 July, 2019;
originally announced July 2019.
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Reconfigurable Mid-Infrared Hyperbolic Metasurfaces using Phase-Change Materials
Authors:
Thomas G. Folland,
Alireza Fali,
Samuel T. White,
Joseph R. Matson,
Song Liu,
Neda A. Aghamiri,
James H. Edgar,
Richard F. Haglund,
Yohannes Abate,
Joshua D. Caldwell
Abstract:
Metasurfaces offer the potential to control light propagation at the nanoscale for applications in both free-space and surface-confined geometries. Existing metasurfaces frequently utilize metallic polaritonic elements with high absorption losses, and/or fixed geometrical designs that serve a single function. Here we overcome these limitations by demonstrating a reconfigurable hyperbolic metasurfa…
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Metasurfaces offer the potential to control light propagation at the nanoscale for applications in both free-space and surface-confined geometries. Existing metasurfaces frequently utilize metallic polaritonic elements with high absorption losses, and/or fixed geometrical designs that serve a single function. Here we overcome these limitations by demonstrating a reconfigurable hyperbolic metasurface comprising of a heterostructure of isotopically enriched hexagonal boron nitride (hBN) in direct contact with the phase-change material (PCM) vanadium dioxide (VO2). Spatially localized metallic and dielectric domains in VO2 change the wavelength of the hyperbolic phonon polaritons (HPhPs) supported in hBN by a factor 1.6 at 1450cm-1. This induces in-plane launching, refraction and reflection of HPhPs in the hBN, proving reconfigurable control of in-plane HPhP propagation at the nanoscale15. These results exemplify a generalizable framework based on combining hyperbolic media and PCMs in order to design optical functionalities such as resonant cavities, beam steering, waveguiding and focusing with nanometric control.
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Submitted 21 May, 2018;
originally announced May 2018.
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Near-field edge fringes at sharp material boundaries
Authors:
Viktoriia E. Babicheva,
Sampath Gamage,
Mark I. Stockman,
Yohannes Abate
Abstract:
We have studied the formation of near-field fringes when sharp edges of materials are imaged using scattering-type scanning near-field optical microscope (s-SNOM). Materials we have investigated include dielectrics, metals, near-perfect conductor, and those that possess anisotropic permittivity and hyperbolic dispersion. For our theoretical analysis, we use a technique that combines full-wave nume…
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We have studied the formation of near-field fringes when sharp edges of materials are imaged using scattering-type scanning near-field optical microscope (s-SNOM). Materials we have investigated include dielectrics, metals, near-perfect conductor, and those that possess anisotropic permittivity and hyperbolic dispersion. For our theoretical analysis, we use a technique that combines full-wave numerical simulations of tip-sample near-field interaction and signal demodulation at higher orders akin to what is done in typical s-SNOM experiments. Unlike previous tip-sample interaction near-field models, our advanced technique allows simulation of the realistic tip and sample structure. Our analysis clarifies edge imaging of recently emerged layered materials such as hexagonal boron nitride and transition metal dichalcogenides (in particular, molybdenum disulfide), as well as traditional plasmonic materials such as gold. Hexagonal boron nitride is studied at several wavelengths, including the wavelength where it possesses excitation of phonon-polaritons and hyperbolic dispersion. Based on our results of s-SNOM imaging in different demodulation orders, we specify resonant and non-resonant types of edges and describe the edge fringes for each case. We clarify near-field edge-fringe formation at material sharp boundaries, both outside bright fringes and the low-contrast region at the edge, and elaborate on the necessity of separating them from propagating waves on the surface of polaritonic materials.
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Submitted 26 July, 2017;
originally announced July 2017.
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Near-field Surface Waves in Few-Layer MoS2
Authors:
Viktoriia E. Babicheva,
Sampath Gamage,
Lee Zhen,
Stephen B. Cronin,
Vladislav S. Yakovlev,
Yohannes Abate
Abstract:
Recently emerged layered transition metal dichalcogenides have attracted great interest due to their intriguing fundamental physical properties and potential applications in optoelectronics. Using scattering-type scanning near-field optical microscope (s-SNOM) and theoretical modeling, we study propagating surface waves in the visible spectral range that are excited at sharp edges of layered trans…
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Recently emerged layered transition metal dichalcogenides have attracted great interest due to their intriguing fundamental physical properties and potential applications in optoelectronics. Using scattering-type scanning near-field optical microscope (s-SNOM) and theoretical modeling, we study propagating surface waves in the visible spectral range that are excited at sharp edges of layered transition metal dichalcogenides (TMDC) such as molybdenum disulfide and tungsten diselenide. These surface waves form fringes in s-SNOM measurements. By measuring how the fringes change when the sample is rotated with respect to the incident beam, we obtain evidence that exfoliated MoS2 on a silicon substrate supports two types of Zenneck surface waves that are predicted to exist in materials with large real and imaginary parts of the permittivity. We have compared MoS2 interference fringes with those formed on layered insulator such as hexagonal boron nitride where only leaky modes are possible due to its small permittivity. Interpretation of experimental data is supported by theoretical models. Our results could pave the way to the investigation of surface waves on TMDCs and other van der Waals materials and their novel photonics applications.
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Submitted 11 March, 2018; v1 submitted 24 July, 2017;
originally announced July 2017.
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Nanoscopy Reveals Metallic Black Phosphorus
Authors:
Yohannes Abate,
Sampath Gamage,
Li Zhen,
Stephen B. Cronin,
Han Wang,
Viktoriia Babicheva,
Mohammad H. Javani,
Mark I. Stockman
Abstract:
Layered and two-dimensional (2D) materials such as graphene, boron nitride, transition metal dichalcogenides(TMDCs), and black phosphorus (BP) have intriguing fundamental physical properties and bear promise of numerous important applications in electronics and optics. Of them, BP is a novel 2D material that has been theoretically predicted to acquire plasmonic behavior for frequencies below ~0.4…
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Layered and two-dimensional (2D) materials such as graphene, boron nitride, transition metal dichalcogenides(TMDCs), and black phosphorus (BP) have intriguing fundamental physical properties and bear promise of numerous important applications in electronics and optics. Of them, BP is a novel 2D material that has been theoretically predicted to acquire plasmonic behavior for frequencies below ~0.4 eV when highly doped. The electronic properties of BP are unique due to an anisotropic structure, which could strongly influence collective electronic excitations. Advantages of BP as a material for nanoelectronics and nanooptics are due to the fact that, in contrast to metals, the free carrier density in it can be dynamically controlled by electrostatic gating, which has been demonstrated by its use in field-effect transistors. Despite all the interest that BP attracts, near-field and plasmonic properties of BP have not yet been investigated experimentally. Here we report the first observation of nanoscopic near-field properties of BP. We have discovered near field patterns of outside bright fringes and high surface polarizability of nanofilm BP consistent with its surface-metallic, plasmonic behavior at mid-infrared (mid-IR) frequencies. This behavior is highly frequency-dispersive, disappearing above frequency, ω =1070 cm-1, which allowed us to estimate the plasma frequency and carrier density. We have also observed similar behavior in other 2D semiconductors such as TMDCs but not in 2D insulators such as boron nitride. This new phenomenon is attributed to surface charging of the semiconductor nanofilms. This discovery opens up a new field of research and potential applications in nanoplasmonics and optoelectronics.
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Submitted 17 June, 2015;
originally announced June 2015.
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Control of plasmonic nanoantennas by reversible metal-insulator transition
Authors:
Yohannes Abate,
Robert E. Marvel,
Jed I. Ziegler,
Sampath Gamage,
Mohammad H. Javani,
Mark I. Stockman,
Richard F. Haglund
Abstract:
Nanophotonic (nanoplasmonic) structures confine, guide, and concentrate light on the nanoscale. Advancement of nanophotonics critically depends on active nanoscale control of these phenomena. Localized control of the insulator and metallic phases of vanadium dioxide (VO2) would open up a universe of applications in nanophotonics via modulation of the local dielectric environment of nanophotonic st…
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Nanophotonic (nanoplasmonic) structures confine, guide, and concentrate light on the nanoscale. Advancement of nanophotonics critically depends on active nanoscale control of these phenomena. Localized control of the insulator and metallic phases of vanadium dioxide (VO2) would open up a universe of applications in nanophotonics via modulation of the local dielectric environment of nanophotonic structures allowing them to function as active devices. Here we show dynamic reversible control of VO2 insulator-to-metal transition (IMT) locally on the scale of 15 nm or less and control of nanoantennas, observed in the near-field for the first time. Using polarization-selective near-field imaging techniques, we monitor simultaneously the IMT in VO2 and the change of plasmons on gold infrared nanoantennas. Structured nanodomains of the metallic VO2 locally and reversibly transform infrared plasmonic dipolar antennas to monopole antennas. Fundamentally, the IMT in VO2 can be triggered on femtosecond timescale to allow ultrafast nanoscale control of optical phenomena. These unique capabilities open up exciting novel applications in active nanophotonics.
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Submitted 10 April, 2015; v1 submitted 9 April, 2015;
originally announced April 2015.