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Unifying Floquet theory of longitudinal and dispersive readout
Authors:
Alessandro Chessari,
Esteban A. Rodríguez-Mena,
José Carlos Abadillo-Uriel,
Victor Champain,
Simon Zihlmann,
Romain Maurand,
Yann-Michel Niquet,
Michele Filippone
Abstract:
We devise a Floquet theory of longitudinal and dispersive readout in circuit QED. By studying qubits coupled to cavity photons and driven at the resonance frequency of the cavity $ω_{\rm r}$, we establish a universal connection between the qubit AC Stark shift and the longitudinal and dispersive coupling to photons. We find that the longitudinal coupling $g_\parallel$ is controlled by the slope of…
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We devise a Floquet theory of longitudinal and dispersive readout in circuit QED. By studying qubits coupled to cavity photons and driven at the resonance frequency of the cavity $ω_{\rm r}$, we establish a universal connection between the qubit AC Stark shift and the longitudinal and dispersive coupling to photons. We find that the longitudinal coupling $g_\parallel$ is controlled by the slope of the AC Stark shift as function of the driving strength $A_{\rm q}$, while the dispersive shift $χ$ depends on its curvature. The two quantities become proportional to each other in the weak drive limit ($A_{\rm q}\rightarrow 0$). Our approach unifies the adiabatic limit ($ω_{\rm r}\rightarrow 0$) -- where $g_\parallel$ is generated by the static spectrum curvature (or quantum capacitance) -- with the diabatic one, where the static spectrum plays no role. We derive analytical results supported by exact numerical simulations. We apply them to superconducting and spin-hybrid cQED systems, showcasing the flexibility of faster-than-dispersive longitudinal readout.
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Submitted 3 July, 2024;
originally announced July 2024.
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Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits
Authors:
Esteban A. Rodríguez-Mena,
José Carlos Abadillo-Uriel,
Gaëtan Veste,
Biel Martinez,
**g Li,
Benoît Sklénard,
Yann-Michel Niquet
Abstract:
We investigate the existence of linear-in-momentum spin-orbit interactions in the valence band of Ge/GeSi heterostructures using an atomistic tight-binding method. We show that symmetry breaking at the Ge/GeSi interfaces gives rise to a linear Dresselhaus-type interaction for heavy-holes. This interaction results from the heavy-hole/light-hole mixings induced by the interfaces and can be captured…
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We investigate the existence of linear-in-momentum spin-orbit interactions in the valence band of Ge/GeSi heterostructures using an atomistic tight-binding method. We show that symmetry breaking at the Ge/GeSi interfaces gives rise to a linear Dresselhaus-type interaction for heavy-holes. This interaction results from the heavy-hole/light-hole mixings induced by the interfaces and can be captured by a suitable correction to the minimal Luttinger-Kohn, four bands $\vec{k}\cdot\vec{p}$ Hamiltonian. It is dependent on the steepness of the Ge/GeSi interfaces, and is suppressed if interdiffusion is strong enough. Besides the Dresselhaus interaction, the Ge/GeSi interfaces also make a contribution to the in-plane gyromagnetic $g$-factors of the holes. The tight-binding calculations also highlight the existence of a small linear Rashba interaction resulting from the couplings between the heavy-hole/light-hole manifold and the conduction band enabled by the low structural symmetry of Ge/GeSi heterostructures. These interactions can be leveraged to drive the hole spin. The linear Dresselhaus interaction may, in particular, dominate the physics of the devices for out-of-plane magnetic fields. When the magnetic field lies in-plane, it is, however, usually far less efficient than the $g$-tensor modulation mechanisms arising from the motion of the dot in non-separable, inhomogeneous electric fields and strains.
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Submitted 15 December, 2023; v1 submitted 19 July, 2023;
originally announced July 2023.
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Hole spin driving by strain-induced spin-orbit interactions
Authors:
José Carlos Abadillo-Uriel,
Esteban A. Rodríguez-Mena,
Biel Martinez,
Yann-Michel Niquet
Abstract:
Hole spins in semiconductor quantum dots can be efficiently manipulated with radio-frequency electric fields owing to the strong spin-orbit interactions in the valence bands. Here we show that the motion of the dot in inhomogeneous strain fields gives rise to linear Rashba spin-orbit interactions (with spatially dependent spin-orbit lengths) and g-factor modulations that allow for fast Rabi oscill…
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Hole spins in semiconductor quantum dots can be efficiently manipulated with radio-frequency electric fields owing to the strong spin-orbit interactions in the valence bands. Here we show that the motion of the dot in inhomogeneous strain fields gives rise to linear Rashba spin-orbit interactions (with spatially dependent spin-orbit lengths) and g-factor modulations that allow for fast Rabi oscillations. Such inhomogeneous strains may build up spontaneously due to process and cool down stress. We discuss spin qubits in Ge/GeSi heterostructures as an illustration. We highlight that Rabi frequencies can be enhanced by one order of magnitude by shear strain gradients as small as $3\times 10^{-6}$ nm$^{-1}$ within the dots. This underlines that spin in solids can be very sensitive to strains and opens the way for strain engineering in hole spin devices for quantum information and spintronics.
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Submitted 1 September, 2023; v1 submitted 7 December, 2022;
originally announced December 2022.
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Hole spin manipulation in inhomogeneous and non-separable electric fields
Authors:
Biel Martinez,
José Carlos Abadillo-Uriel,
Esteban A. Rodríguez-Mena,
Yann-Michel Niquet
Abstract:
The usual models for electrical spin manipulation in semiconductor quantum dots assume that the confinement potential is separable in the three spatial dimensions and that the AC drive field is homogeneous. However, the electric field induced by the gates in quantum dot devices is not fully separable and displays significant inhomogeneities. Here, we address the electrical manipulation of hole spi…
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The usual models for electrical spin manipulation in semiconductor quantum dots assume that the confinement potential is separable in the three spatial dimensions and that the AC drive field is homogeneous. However, the electric field induced by the gates in quantum dot devices is not fully separable and displays significant inhomogeneities. Here, we address the electrical manipulation of hole spins in semiconductor heterostructures subject to inhomogeneous vertical electric fields and/or in-plane AC electric fields. We consider Ge quantum dots electrically confined in a Ge/GeSi quantum well as an illustration. We show that the lack of separability between the vertical and in-plane motions gives rise to an additional spin-orbit coupling mechanism (beyond the usual linear and cubic in momentum Rashba terms) that modulates the principal axes of the hole gyromagnetic g-matrix. This non-separability mechanism can be of the same order of magnitude as Rashba-type interactions, and enables spin manipulation when the magnetic field is applied in the plane of the heterostructure even if the dot is symmetric (disk-shaped). More generally, we show that Rabi oscillations in strongly patterned electric fields harness a variety of g-factor modulations. We discuss the implications for the design, modeling and understanding of hole spin qubit devices.
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Submitted 28 December, 2022; v1 submitted 21 September, 2022;
originally announced September 2022.
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Strong coupling between a photon and a hole spin in silicon
Authors:
Cécile X. Yu,
Simon Zihlmann,
José C. Abadillo-Uriel,
Vincent P. Michal,
Nils Rambal,
Heimanu Niebojewski,
Thomas Bedecarrats,
Maud Vinet,
Etienne Dumur,
Michele Filippone,
Benoit Bertrand,
Silvano De Franceschi,
Yann-Michel Niquet,
Romain Maurand
Abstract:
Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbor quantum interactions. Here we demonstrate strong coupling between a microwave photon in a supe…
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Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbor quantum interactions. Here we demonstrate strong coupling between a microwave photon in a superconducting resonator and a hole spin in a silicon-based double quantum dot issued from a foundry-compatible MOS fabrication process. By leveraging the strong spin-orbit interaction intrinsically present in the valence band of silicon, we achieve a spin-photon coupling rate as high as 330~MHz largely exceeding the combined spin-photon decoherence rate. This result, together with the recently demonstrated long coherence of hole spins in silicon, opens a new realistic pathway to the development of circuit quantum electrodynamics with spins in semiconductor quantum dots.
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Submitted 9 May, 2023; v1 submitted 28 June, 2022;
originally announced June 2022.
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Tunable hole spin-photon interaction based on g-matrix modulation
Authors:
V. P. Michal,
J. C. Abadillo-Uriel,
S. Zihlmann,
R. Maurand,
Y. -M. Niquet,
M. Filippone
Abstract:
We consider a spin circuit-QED device where a superconducting microwave resonator is capacitively coupled to a single hole confined in a semiconductor quantum dot. Thanks to the strong spin-orbit coupling intrinsic to valence-band states, the gyromagnetic g-matrix of the hole can be modulated electrically. This modulation couples the photons in the resonator to the hole spin. We show that the appl…
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We consider a spin circuit-QED device where a superconducting microwave resonator is capacitively coupled to a single hole confined in a semiconductor quantum dot. Thanks to the strong spin-orbit coupling intrinsic to valence-band states, the gyromagnetic g-matrix of the hole can be modulated electrically. This modulation couples the photons in the resonator to the hole spin. We show that the applied gate voltages and the magnetic-field orientation enable a versatile control of the spin-photon interaction, whose character can be switched from fully transverse to fully longitudinal. The longitudinal coupling is actually maximal when the transverse one vanishes and vice-versa. This "reciprocal sweetness" results from geometrical properties of the g-matrix and protects the spin against dephasing or relaxation. We estimate coupling rates reaching ~ 10 MHz in realistic settings and discuss potential circuit-QED applications harnessing either the transverse or the longitudinal spin-photon interaction. Furthermore, we demonstrate that the g-matrix curvature can be used to achieve parametric longitudinal coupling with enhanced coherence.
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Submitted 31 January, 2023; v1 submitted 1 April, 2022;
originally announced April 2022.
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A single hole spin with enhanced coherence in natural silicon
Authors:
N. Piot,
B. Brun,
V. Schmitt,
S. Zihlmann,
V. P. Michal,
A. Apra,
J. C. Abadillo-Uriel,
X. Jehl,
B. Bertrand,
H. Niebojewski,
L. Hutin,
M. Vinet,
M. Urdampilleta,
T. Meunier,
Y. -M. Niquet,
R. Maurand,
S. De Franceschi
Abstract:
Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a…
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Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a natural silicon metal-oxide-semiconductor device. By varying the magnetic field orientation, we reveal the existence of operation sweet spots where the impact of charge noise is minimized while preserving an efficient electric-dipole spin control. We correspondingly observe an extension of the Hahn-echo coherence time up to 88 $μ$s, exceeding by an order of magnitude the best reported values for hole-spin qubits, and approaching the state-of-the-art for electron spin qubits with synthetic spin-orbit coupling in isotopically-purified silicon. This finding largely enhances the prospects of silicon-based hole spin qubits for scalable quantum information processing.
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Submitted 25 September, 2022; v1 submitted 21 January, 2022;
originally announced January 2022.
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Non-reciprocal Pauli Spin Blockade in a Silicon Double Quantum Dot
Authors:
Theodor Lundberg,
David J. Ibberson,
**g Li,
Louis Hutin,
José C. Abadillo-Uriel,
Michele Filippone,
Benoit Bertrand,
Andreas Nunnenkamp,
Chang-Min Lee,
Nadia Stelmashenko,
Jason W. A. Robinson,
Maud Vinet,
Lisa Ibberson,
Yann-Michel Niquet,
M. Fernando Gonzalez-Zalba
Abstract:
Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB), however various mechanisms may lift PSB and complicate readout. In this work, we present an experimental observation of a new, highly prevalent PSB-lifting mech…
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Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB), however various mechanisms may lift PSB and complicate readout. In this work, we present an experimental observation of a new, highly prevalent PSB-lifting mechanism in a silicon double quantum dot due to incoherent tunneling between different spin manifolds. Through dispersively-detected magnetospectroscopy of the double quantum dot in 16 charge configurations, we find the mechanism to be energy-level selective and non-reciprocal for neighbouring charge configurations. Additionally, using input-output theory we report a large coupling of different electron spin manifolds of 7.90 $μ$eV, the largest reported to date, indicating an enhanced spin-orbit coupling which may enable all-electrical qubit control.
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Submitted 20 October, 2021; v1 submitted 19 October, 2021;
originally announced October 2021.
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Two-body Wigner molecularization in asymmetric quantum dot spin qubits
Authors:
José C. Abadillo-Uriel,
Biel Martinez,
Michele Filippone,
Yann-Michel Niquet
Abstract:
Coulomb interactions strongly influence the spectrum and the wave functions of few electrons or holes confined in a quantum dot. In particular, when the confinement potential is not too strong, the Coulomb repulsion triggers the formation of a correlated state, the Wigner molecule, where the particles tend to split apart. We show that the anisotropy of the confinement potential strongly enhances t…
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Coulomb interactions strongly influence the spectrum and the wave functions of few electrons or holes confined in a quantum dot. In particular, when the confinement potential is not too strong, the Coulomb repulsion triggers the formation of a correlated state, the Wigner molecule, where the particles tend to split apart. We show that the anisotropy of the confinement potential strongly enhances the molecularization process and affects the performances of quantum-dot systems used as spin qubits. Relying on analytical and numerical solutions of the two-particle problem -- both in a simplified single-band approximation and in realistic setups -- we highlight the exponential suppression of the singlet-triplet gap with increasing anisotropy. We compare the molecularization effects in different semiconductor materials and discuss how they specifically hamper Pauli spin blockade readout and reduce the exchange interactions in two-qubit gates.
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Submitted 19 November, 2021; v1 submitted 23 July, 2021;
originally announced July 2021.
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Long-range two-hybrid-qubit gates mediated by a microwave cavity with red sidebands
Authors:
J. C. Abadillo-Uriel,
Evelyn King,
S. N. Coppersmith,
Mark Friesen
Abstract:
Implementing two-qubit gates via strong coupling between quantum-dot qubits and a superconducting microwave cavity requires achieving coupling rates that are much faster than decoherence rates. Typically, this involves tuning the qubit either to a sweet spot, where it is relatively insensitive to charge noise, or to a point where it is resonant with the microwave cavity. Unfortunately, such operat…
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Implementing two-qubit gates via strong coupling between quantum-dot qubits and a superconducting microwave cavity requires achieving coupling rates that are much faster than decoherence rates. Typically, this involves tuning the qubit either to a sweet spot, where it is relatively insensitive to charge noise, or to a point where it is resonant with the microwave cavity. Unfortunately, such operating points seldom coincide. Here, we theoretically investigate several schemes for performing gates between two quantum-dot hybrid qubits, mediated by a microwave cavity. The rich physics of the quantum dot hybrid qubit gives rise to two types of sweet spots, which can occur at operating points with strong charge dipole moments. Such strong interactions provide new opportunities for off-resonant gating, thereby removing one of the main obstacles for long-distance two-qubit gates. Our results suggest that the numerous tuning knobs of quantum dot hybrid qubits make them good candidates for strong coupling. In particular, we show that off-resonant red-sideband-mediated two-qubit gates can exhibit fidelities $>$95\% for realistic operating parameters, and we describe improvements that could potentially yield gate fidelities $>$99\%.
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Submitted 19 June, 2021;
originally announced June 2021.
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Coherent control and spectroscopy of a semiconductor quantum dot Wigner molecule
Authors:
J. Corrigan,
J. P. Dodson,
H. Ekmel Ercan,
J. C. Abadillo-Uriel,
Brandur Thorgrimsson,
T. J. Knapp,
Nathan Holman,
Thomas McJunkin,
Samuel F. Neyens,
E. R. MacQuarrie,
Ryan H. Foote,
L. F. Edge,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such control in the strongly interacting regime has not been realized. Here we report quantum control of eight different resonances in a silicon-based quantum do…
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Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such control in the strongly interacting regime has not been realized. Here we report quantum control of eight different resonances in a silicon-based quantum dot. We use qubit readout to perform spectroscopy, revealing a dense set of energy levels with characteristic spacing far smaller than the single-particle energy. By comparing with full configuration interaction calculations, we argue that the dense set of levels arises from Wigner-molecule physics.
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Submitted 28 September, 2020;
originally announced September 2020.
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Realization of a $CQ_3$ Qubit: energy spectroscopy and coherence
Authors:
Benedikt Kratochwil,
Jonne V. Koski,
Andreas J. Landig,
Pasquale Scarlino,
José C. Abadillo-Uriel,
Christian Reichl,
Susan N. Coppersmith,
Werner Wegscheider,
Mark Friesen,
Andreas Wallraff,
Thomas Ihn,
Klaus Ensslin
Abstract:
The energy landscape of a single electron in a triple quantum dot can be tuned such that the energy separation between ground and excited states becomes a flat function of the relevant gate voltages. These so-called sweet spots are beneficial for charge coherence, since the decoherence effects caused by small fluctuations of gate voltages or surrounding charge fluctuators are minimized. We propose…
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The energy landscape of a single electron in a triple quantum dot can be tuned such that the energy separation between ground and excited states becomes a flat function of the relevant gate voltages. These so-called sweet spots are beneficial for charge coherence, since the decoherence effects caused by small fluctuations of gate voltages or surrounding charge fluctuators are minimized. We propose a new operation point for a triple quantum dot charge qubit, a so-called $CQ_3$-qubit, having a third order sweet spot. We show strong coupling of the qubit to single photons in a frequency tunable high-impedance SQUID-array resonator. In the dispersive regime we investigate the qubit linewidth in the vicinity of the proposed operating point. In contrast to the expectation for a higher order sweet spot, we there find a local maximum of the linewidth. We find that this is due to a non-negligible contribution of noise on the quadrupolar detuning axis not being in a sweet spot at the proposed operating point. While the original motivation to realize a low-decoherence charge qubit was not fulfilled, our analysis provides insights into charge decoherence mechanisms relevant also for other qubits.
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Submitted 10 June, 2020;
originally announced June 2020.
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Enhancing the dipolar coupling of a $S$-$T_0$ qubit with a transverse sweet spot
Authors:
J. C. Abadillo-Uriel,
M. A. Eriksson,
S. N. Coppersmith,
M. Friesen
Abstract:
A fundamental design challenge for quantum dot spin qubits is to extend the strength and range of qubit interactions while suppressing their coupling to the environment, since both effects have electrical origins. Key tools include the ability to retune the qubits, to take advantage of physical resources in different operating regimes, and to access optimal working points, or "sweet spots," where…
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A fundamental design challenge for quantum dot spin qubits is to extend the strength and range of qubit interactions while suppressing their coupling to the environment, since both effects have electrical origins. Key tools include the ability to retune the qubits, to take advantage of physical resources in different operating regimes, and to access optimal working points, or "sweet spots," where dephasing is minimized. Here, we explore an important, new resource for singlet-triplet qubits: a transverse sweet spot (TSS) that enables (i) direct transitions between qubit states, (ii) a strong, charge-like qubit coupling, and (iii) leading-order protection from electrical fluctuations. Of particular interest is the possibility of transitioning between the TSS and symmetric operating points while remaining continuously protected. This arrangement is ideal for coupling qubits to a microwave cavity, because it combines maximal tunability of the coupling strength with leading-order noise suppression. We perform simulations with $1/f$-type electrical noise, demonstrating that two-qubit gates mediated by a resonator can achieve fidelities $>99$\% under realistic conditions. These results greatly expand the toolbox for singlet-triplet qubits.
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Submitted 16 May, 2019; v1 submitted 15 May, 2019;
originally announced May 2019.
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Strong photon coupling to the quadrupole moment of an electron in solid state
Authors:
Jonne V. Koski,
Andreas J. Landig,
Maximilian Russ,
José C. Abadillo-Uriel,
Pasquale Scarlino,
Benedikt Kratochwil,
Christian Reichl,
Werner Wegscheider,
Guido Burkard,
Mark Friesen,
Susan N. Coppersmith,
Andreas Wallraff,
Klaus Ensslin,
Thomas Ihn
Abstract:
The implementation of circuit quantum electrodynamics allows coupling distant qubits by microwave photons hosted in on-chip superconducting resonators. Typically, the qubit-photon interaction is realized by coupling the photons to the electric dipole moment of the qubit. A recent proposal suggests storing the quantum information in the electric quadrupole moment of an electron in a triple quantum…
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The implementation of circuit quantum electrodynamics allows coupling distant qubits by microwave photons hosted in on-chip superconducting resonators. Typically, the qubit-photon interaction is realized by coupling the photons to the electric dipole moment of the qubit. A recent proposal suggests storing the quantum information in the electric quadrupole moment of an electron in a triple quantum dot. The qubit is expected to have improved coherence since it is insensitive to dipolar noise produced by distant voltage fluctuators. Here we experimentally realize a quadrupole qubit in a linear array of three quantum dots in a GaAs/AlGaAs heterostructure. A high impedance microwave resonator coupled to the middle dot interacts with the qubit quadrupole moment. We demonstrate strong quadrupole qubit--photon coupling and observe improved coherence properties when operating the qubit in the parameter space where the dipole coupling vanishes.
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Submitted 2 May, 2019;
originally announced May 2019.
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Coherent long-distance spin-qubit-transmon coupling
Authors:
A. J. Landig,
J. V. Koski,
P. Scarlino,
C. Müller,
J. C. Abadillo-Uriel,
B. Kratochwil,
C. Reichl,
W. Wegscheider,
S. N. Coppersmith,
Mark Friesen,
A. Wallraff,
T. Ihn,
K. Ensslin
Abstract:
Spin qubits and superconducting qubits are among the promising candidates for a solid state quantum computer. For the implementation of a hybrid architecture which can profit from the advantages of either world, a coherent long-distance link is necessary that integrates and couples both qubit types on the same chip. We realize such a link with a frequency-tunable high impedance SQUID array resonat…
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Spin qubits and superconducting qubits are among the promising candidates for a solid state quantum computer. For the implementation of a hybrid architecture which can profit from the advantages of either world, a coherent long-distance link is necessary that integrates and couples both qubit types on the same chip. We realize such a link with a frequency-tunable high impedance SQUID array resonator. The spin qubit is a resonant exchange qubit hosted in a GaAs triple quantum dot. It can be operated at zero magnetic field, allowing it to coexist with superconducting qubits on the same chip. We find a working point for the spin qubit, where the ratio between its coupling strength and decoherence rate is optimized. We observe coherent interaction between the resonant exchange qubit and a transmon qubit in both resonant and dispersive regimes, where the interaction is mediated either by real or virtual resonator photons.
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Submitted 10 March, 2019;
originally announced March 2019.
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Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit
Authors:
J. C. Abadillo-Uriel,
Brandur Thorgrimsson,
Dohun Kim,
L. W. Smith,
C. B. Simmons,
Daniel R. Ward,
Ryan H. Foote,
J. Corrigan,
D. E. Savage,
M. G. Lagally,
M. J. Calderón,
S. N. Coppersmith,
M. A. Eriksson,
Mark Friesen
Abstract:
We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to "sweet spots" where the…
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We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to "sweet spots" where the decoherence caused by charge noise is suppressed, even in a parameter regime where true sweet spots are unexpected. Conversely, "hot spots" where the decoherence is enhanced can also occur. Our results suggest that, under appropriate conditions, interfacial atomic structure can be used as a tool to enhance the fidelity of Si double-dot qubits.
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Submitted 25 May, 2018;
originally announced May 2018.
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Electric-field tuning of the valley splitting in silicon corner dots
Authors:
David J. Ibberson,
Léo Bourdet,
José C. Abadillo-Uriel,
Imtiaz Ahmed,
Sylvain Barraud,
María J. Calderón,
Yann-Michel Niquet,
M. Fernando Gonzalez-Zalba
Abstract:
We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between a single quantum dot and a double quantum dot in parallel that allows tuning the device in to corner dot formation. We find a linear dependence of the valley s…
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We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between a single quantum dot and a double quantum dot in parallel that allows tuning the device in to corner dot formation. We find a linear dependence of the valley splitting on back-gate voltage, from $880~μ\text{eV}$ to $610~μ\text{eV}$ with a slope of $-45\pm 3~μ\text{eV/V}$ (or equivalently a slope of $-48\pm 3~μ\text{eV/(MV/m)}$ with respect to the effective field). The experimental results are backed up by tight-binding simulations that include the effect of surface roughness, remote charges in the gate stack and discrete dopants in the channel. Our results demonstrate a way to electrically tune the valley splitting in silicon-on-insulator-based quantum dots, a requirement to achieve all-electrical manipulation of silicon spin qubits.
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Submitted 23 July, 2018; v1 submitted 21 May, 2018;
originally announced May 2018.
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2-dimensional semiconductors pave the way towards dopant based quantum computing
Authors:
J. C. Abadillo-Uriel,
Belita Koiller,
M. J. Calderón
Abstract:
Since the 1998 proposal to build a quantum computer using dopants in semiconductors as qubits, much progress has been achieved on semiconductors nano fabrication and control of charge and spins in single dopants. However, an important problem remains, which is the control at the atomic scale of the dopants positioning. We propose to circumvent this problem by using 2 dimensional materials as hosts…
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Since the 1998 proposal to build a quantum computer using dopants in semiconductors as qubits, much progress has been achieved on semiconductors nano fabrication and control of charge and spins in single dopants. However, an important problem remains, which is the control at the atomic scale of the dopants positioning. We propose to circumvent this problem by using 2 dimensional materials as hosts. Since the first isolation of graphene in 2004, the number of new 2D materials with favorable properties for electronics has been growing. Dopants in 2 dimensional systems are more tightly bound and potentially easier to position and manipulate. Considering the properties of currently available 2D materials, we access the feasibility of such proposal in terms of the manipulability of isolated dopants (for single qubit operations) and dopant pairs (for two qubit operations). Our results indicate that a wide variety of 2D materials may perform at least as well as the currently studied bulk host for donor qubits.
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Submitted 7 January, 2018;
originally announced January 2018.
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Entanglement control and magic angles for acceptor qubits in Si
Authors:
J. C. Abadillo-Uriel,
Joe Salfi,
Xuedong Hu,
Sven Rogge,
M. J. Calderón,
Dimitrie Culcer
Abstract:
Full electrical control of quantum bits could enable fast, low-power, scalable quantum computation. Although electric dipoles are highly attractive to couple spin qubits electrically over long distances, mechanisms identified to control two-qubit couplings do not permit single-qubit operations while two-qubit couplings are off. Here we identify a mechanism to modulate electrical coupling of spin q…
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Full electrical control of quantum bits could enable fast, low-power, scalable quantum computation. Although electric dipoles are highly attractive to couple spin qubits electrically over long distances, mechanisms identified to control two-qubit couplings do not permit single-qubit operations while two-qubit couplings are off. Here we identify a mechanism to modulate electrical coupling of spin qubits that overcomes this drawback for hole spin qubits in acceptors,that is based on the electrical tuning of the direction of the spin-dependent electric dipole by a gate. In this way, inter-qubit coupling can be turned off electrically by tuning to a "magic angle" of vanishing electric dipole-dipole interactions, while retaining the ability to manipulate the individual qubits. This effect stems from the interplay of the $\rm T_d$ symmetry of the acceptor state in the Si lattice with the magnetic field orientation, and the spin-3/2 characteristic of hole systems. Magnetic field direction also allows to greatly suppress spin relaxation by phonons that limit single qubit performance, while retaining sweet spots where the qubits are insensitive to charge noise. Our findings can be directly applied to state-of-the-art acceptor based architectures, for which we propose suitable protocols to practically achieve full electrical tunability of entanglement and the realization of a decoherence-free subspace.
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Submitted 20 December, 2017; v1 submitted 27 June, 2017;
originally announced June 2017.
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Spin qubit manipulation of acceptor bound states in group IV quantum wells
Authors:
J. C. Abadillo-Uriel,
M. J. Calderón
Abstract:
The large spin-orbit coupling in the valence band of group IV semiconductors provides an electric field knob for spin-qubit manipulation. This fact can be exploited with acceptor based qubits. Spin manipulation of holes bound to acceptors in engineered SiGe quantum wells depends very strongly on the electric field applied and on the heterostructure parameters. The g-factor is enhanced by the Ge co…
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The large spin-orbit coupling in the valence band of group IV semiconductors provides an electric field knob for spin-qubit manipulation. This fact can be exploited with acceptor based qubits. Spin manipulation of holes bound to acceptors in engineered SiGe quantum wells depends very strongly on the electric field applied and on the heterostructure parameters. The g-factor is enhanced by the Ge content and can be tuned by shifting the hole wave-function between the heterostructure constituent layers. The lack of inversion symmetry induced both by the quantum well and the electric fields together with the g-factor tunability allows the possibility of different qubit manipulation methods such as electron spin resonance, electric dipole spin resonance and g-tensor modulation resonance. Rabi frequencies up to hundreds of MHz can be achieved with heavy-hole qubits, and of the order of GHz with light-hole qubits.
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Submitted 3 February, 2017;
originally announced February 2017.
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Interface effects on acceptor qubits in silicon and germanium
Authors:
J. C. Abadillo-Uriel,
M. J. Calderón
Abstract:
Dopant-based quantum computing implementations often require the dopants to be situated close to an interface to facilitate qubit manipulation with local gates. Interfaces not only modify the energies of the bound states but also affect their symmetry. Making use of the successful effective mass theory we study the energy spectra of acceptors in Si or Ge taking into account the quantum confinement…
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Dopant-based quantum computing implementations often require the dopants to be situated close to an interface to facilitate qubit manipulation with local gates. Interfaces not only modify the energies of the bound states but also affect their symmetry. Making use of the successful effective mass theory we study the energy spectra of acceptors in Si or Ge taking into account the quantum confinement, the dielectric mismatch and the central cell effects. The presence of an interface puts constraints to the allowed symmetries and lead to the splitting of the ground state in two Kramers doublets [J. Mol et al, App. Phys. Lett. 106, 203110 (2015)]. Inversion symmetry breaking also implies parity mixing which affects the allowed optical transitions. Consequences for acceptor qubits are discussed.
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Submitted 2 September, 2015;
originally announced September 2015.
