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Anisotropic magnetoresistance in altermagnetic MnTe
Authors:
Ruben Dario Gonzalez Betancourt,
Jan Zubáč,
Kevin Geishendorf,
Philipp Ritzinger,
Barbora Růžičková,
Tommy Kotte,
Jakub Železný,
Kamil Olejník,
Gunther Springholz,
Bernd Büchner,
Andy Thomas,
Karel Výborný,
Tomas Jungwirth,
Helena Reichlová,
Dominik Kriegner
Abstract:
Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical res…
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Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order.
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Submitted 25 April, 2024;
originally announced April 2024.
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Even-in-magnetic-field part of transverse resistivity as a probe of magnetic order
Authors:
Antonin Badura,
Dominik Kriegner,
Eva Schmoranzerová,
Karel Výborný,
Miina Leiviskä,
Rafael Lopes Seeger,
Vincent Baltz,
Daniel Scheffler,
Sebastian Beckert,
Ismaila Kounta,
Lisa Michez,
Libor Šmejkal,
Jairo Sinova,
Sebastian T. B. Goennenwein,
Jakub Železný,
Helena Reichlová
Abstract:
The detection of a voltage transverse to both an applied current and a magnetic field is one of the most common characterization techniques in solid-state physics. The corresponding component of the resistivity tensor $ρ_{ij}$ can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effec…
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The detection of a voltage transverse to both an applied current and a magnetic field is one of the most common characterization techniques in solid-state physics. The corresponding component of the resistivity tensor $ρ_{ij}$ can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effect. The latter is typically ascribed to experimental artefacts and ignored. We here show that upon suppressing these artefacts in carefully controlled experiments, useful information remains. We first investigate the well-explored ferromagnet CoFeB, where the even part of $ρ_{yx}$ contains a contribution from the anisotropic magnetoresistance, which we confirm by Stoner-Wohlfarth modelling. We then apply our approach to magnetotransport measurements in $\rm Mn_5Si_3$ thin films with a complex compensated magnetic order. In this material, the even part of the transverse signal is sizable only in the low-spin-symmetry phase below $\approx 80$ K and thus offers a simple and readily available probe of the magnetic order.
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Submitted 24 November, 2023;
originally announced November 2023.
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Non-relativistic torque and Edelstein effect in noncollinear magnets
Authors:
Rafael González-Hernández,
Philipp Ritzinger,
Karel Výborný,
Jakub Železný,
Aurélien Manchon
Abstract:
The Edelstein effect is the origin of the spin-orbit torque: a current-induced torque that is used for the electrical control of ferromagnetic and antiferromagnetic materials. This effect originates from the relativistic spin-orbit coupling, which necessitates utilizing materials with heavy elements. Here we show that in magnetic materials with non-collinear magnetic order, the Edelstein effect an…
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The Edelstein effect is the origin of the spin-orbit torque: a current-induced torque that is used for the electrical control of ferromagnetic and antiferromagnetic materials. This effect originates from the relativistic spin-orbit coupling, which necessitates utilizing materials with heavy elements. Here we show that in magnetic materials with non-collinear magnetic order, the Edelstein effect and consequently also a current-induced torque can exist even in the absence of the spin-orbit coupling. Using group symmetry analysis, model calculations, and realistic simulations on selected compounds, we identify large classes of non-collinear magnet candidates and demonstrate that the current-driven torque is of similar magnitude as the celebrated spin-orbit torque in conventional transition metal structures. We also show that this torque can exist in an insulating material, which could allow for highly efficient electrical control of magnetic order.
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Submitted 10 October, 2023;
originally announced October 2023.
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Anomalous Nernst effect in Mn$_3$NiN thin films
Authors:
Sebastian Beckert,
João Godinho,
Freya Johnson,
Jozef Kimák,
Eva Schmoranzerová,
Jan Zemen,
Zbyněk Šobáň,
Kamil Olejník,
Jakub Železný,
Joerg Wunderlich,
Petr Němec,
Dominik Kriegner,
Andy Thomas,
Sebastian T. B. Goennenwein,
Lesley F Cohen,
Helena Reichlová
Abstract:
The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect…
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The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect and its magnitude in this class of materials are, however, very limited. This scarcity may be partly due to the experimental difficulty of reliably quantifying the anomalous Nernst coefficient. Here, we report experiments on the anomalous Nernst effect in antiferromagnetic antiperovskite Mn$_3$NiN thin films. Measurement of both the anomalous Hall and Nernst effects using the same sample and measurement geometry makes it possible to directly compare these two effects and quantify the anomalous Nernst coefficient and conductivity in Mn$_3$NiN. We carefully evaluate the spatial distribution of the thermal gradient in the sample and use finite element modeling to corroborate our experimental results.
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Submitted 5 December, 2022;
originally announced December 2022.
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High-throughput study of the anomalous Hall effect
Authors:
Jakub Železný,
Yuta Yahagi,
Carlés-Gomez Ollivella,
Yang Zhang,
Yan Sun
Abstract:
Despite being known for a long time the anomalous Hall effect still attracts attention because of its complex origins, its connection to topology and because it serves as a useful probe of the magnetic order. Here we study the anomalous Hall effect using automatic high-throughput calculation scheme. We calculate the intrinsic anomalous Hall effect in 2871 ferromagnetic materials. We use these resu…
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Despite being known for a long time the anomalous Hall effect still attracts attention because of its complex origins, its connection to topology and because it serves as a useful probe of the magnetic order. Here we study the anomalous Hall effect using automatic high-throughput calculation scheme. We calculate the intrinsic anomalous Hall effect in 2871 ferromagnetic materials. We use these results to study general properties of the anomalous Hall effect such as its dependence on the strength of the spin-orbit coupling or magnetization. We also examine the origin of the anomalous Hall effect in the materials with the largest effect and show that the origin of the large anomalous Hall effect is usually associated with symmetry protected band degeneracies in the non-relativistic electronic structure, typically mirror symmetry protected nodal lines. Additionally, we study the dependence of the anomalous Hall effect on the magnetization direction, showing that in many materials it differs significantly from the commonly assumed expression $\mathbf{j}^\text{AHE} \sim \mathbf{M} \times \mathbf{E}$.
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Submitted 30 May, 2022;
originally announced May 2022.
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Spontaneous anomalous Hall effect arising from an unconventional compensated magnetic phase in a semiconductor
Authors:
R. D. Gonzalez Betancourt,
J. Zubáč,
R. J. Gonzalez-Hernandez,
K. Geishendorf,
Z. Šobáň,
G. Springholz,
K. Olejník,
L. Šmejkal,
J. Sinova,
T. Jungwirth,
S. T. B. Goennenwein,
A. Thomas,
H. Reichlová,
J. Železný,
D. Kriegner
Abstract:
The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a colli…
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The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a collinear antiparallel magnetic ordering of Mn moments and a vanishing net magnetization. The anomalous Hall effect arises from an unconventional phase with strong time-reversal symmetry breaking and alternating spin polarization in real-space crystal structure and momentum-space electronic structure. The anisotropic crystal environment of magnetic Mn atoms due to the non-magnetic Te atoms is essential for establishing the unconventional phase and generating the anomalous Hall effect.
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Submitted 23 January, 2023; v1 submitted 13 December, 2021;
originally announced December 2021.
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Robust spin-transfer torque and magnetoresistance in non-collinear antiferromagnetic junctions
Authors:
Srikrishna Ghosh,
Aurelien Manchon,
Jakub Železný
Abstract:
Ferromagnetic spin-valves and tunneling junctions are crucial for spintronics applications and are one of the most fundamental spintronics devices. Motivated by the potential unique advantages of antiferromagnets for spintronics, we theoretically study here junctions built out of non-collinear antiferromagnets. We demonstrate a large and robust magnetoresistance and spin-transfer torque capable of…
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Ferromagnetic spin-valves and tunneling junctions are crucial for spintronics applications and are one of the most fundamental spintronics devices. Motivated by the potential unique advantages of antiferromagnets for spintronics, we theoretically study here junctions built out of non-collinear antiferromagnets. We demonstrate a large and robust magnetoresistance and spin-transfer torque capable of ultrafast switching between parallel and anti-parallel states of the junction. In addition, we show that the non-collinear order results in a spin-transfer torque that is in several key aspects different from the spin-transfer torque in ferromagnetic junctions.
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Submitted 3 September, 2021;
originally announced September 2021.
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Theoretical Study of Extrinsic Spin-current Generation in Ferromagnets Induced by Anisotropic Spin-flip Scattering
Authors:
Yuta Yahagi,
Jakub Zelezny,
Daisuke Miura,
Akimasa Sakuma
Abstract:
The spin Hall effect (SHE) and the magnetic spin Hall effect (MSHE) are responsible for electrical spin current generation, which is a key concept of modern spintronics. We theoretically investigated the spin conductivity induced by spin-dependent s-d scattering in a ferromagnetic 3d alloy model by employing microscopic transport theory based on the Kubo formula. We derived a novel extrinsic mecha…
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The spin Hall effect (SHE) and the magnetic spin Hall effect (MSHE) are responsible for electrical spin current generation, which is a key concept of modern spintronics. We theoretically investigated the spin conductivity induced by spin-dependent s-d scattering in a ferromagnetic 3d alloy model by employing microscopic transport theory based on the Kubo formula. We derived a novel extrinsic mechanism that contributes to both the SHE and MSHE. This mechanism can be understood as the contribution from anisotropic (spatial-dependent) spin-flip scattering due to the combination of the orbital-dependent anisotropic shape of s-d hybridization and spin flip**, with the orbital shift caused by spin-orbit interaction with the d-orbitals. We also show that this mechanism is valid under crystal-field splitting among the d-orbitals in either the cubic or tetragonal symmetry.
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Submitted 13 April, 2021; v1 submitted 7 March, 2021;
originally announced March 2021.
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Unidirectional magnetoresistance and spin-orbit torque in NiMnSb
Authors:
J. Železný,
Z. Fang,
K. Olejník,
J. Patchett,
F. Gerhard,
C. Gould,
L. W. Molenkamp,
C. Gomez-Olivella,
J. Zemen,
T. Tichý,
T. Jungwirth,
C. Ciccarelli
Abstract:
Spin-dependent transport phenomena due to relativistic spin-orbit coupling and broken space-inversion symmetry are often difficult to interpret microscopically, in particular when occurring at surfaces or interfaces. Here we present a theoretical and experimental study of spin-orbit torque and unidirectional magnetoresistance in a model room-temperature ferromagnet NiMnSb with inversion asymmetry…
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Spin-dependent transport phenomena due to relativistic spin-orbit coupling and broken space-inversion symmetry are often difficult to interpret microscopically, in particular when occurring at surfaces or interfaces. Here we present a theoretical and experimental study of spin-orbit torque and unidirectional magnetoresistance in a model room-temperature ferromagnet NiMnSb with inversion asymmetry in the bulk of this half-heusler crystal. Besides the angular dependence on magnetization, the competition of Rashba and Dresselhaus-like spin-orbit couplings results in the dependence of these effects on the crystal direction of the applied electric field. The phenomenology that we observe highlights potential inapplicability of commonly considered approaches for interpreting experiments. We point out that, in general, there is no direct link between the current-induced non-equilibrium spin polarization inferred from the measured spin-orbit torque and the unidirectional magnetiresistance. We also emphasize that the unidirectional magnetoresistance has not only longitudinal but also transverse components in the electric field -- current indices which complicates its separation from the thermoelectric contributions to the detected signals in common experimental techniques. We use the theoretical results to analyze our measurements of the on-resonance and off-resonance mixing signals in microbar devices fabricated from an epitaxial NiMnSb film along different crystal directions. Based on the analysis we extract an experimental estimate of the unidirectional magnetoresistance in NiMnSb.
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Submitted 25 February, 2021;
originally announced February 2021.
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Atomically sharp domain walls in an antiferromagnet
Authors:
Filip Krizek,
Sonka Reimers,
Zdeněk Kašpar,
Alberto Marmodoro,
Jan Michalička,
Ondřej Man,
Alexander Edstrom,
Oliver J. Amin,
Kevin W. Edmonds,
Richard P. Campion,
Francesco Maccherozzi,
Sarnjeet S. Dnes,
Jan Zubáč,
Jakub Železný,
Karel Výborný,
Kamil Olejník,
Vít Novák,
Jan Rusz,
Juan C. Idrobo,
Peter Wadley,
Tomas Jungwirth
Abstract:
The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on ferromagnets has recently started to shift towards antiferromagnets which offer a rich materials landscape and utility in ultra-fast and neuromorphic d…
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The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on ferromagnets has recently started to shift towards antiferromagnets which offer a rich materials landscape and utility in ultra-fast and neuromorphic devices insensitive to magnetic field perturbations. Here we report the observation that domain walls in an epitaxial crystal of antiferromagnetic CuMnAs can be atomically sharp. We reveal this ultimate domain wall scaling limit using differential phase contrast imaging within aberrationcorrected scanning transmission electron microscopy, which we complement by X-ray magnetic dichroism microscopy and ab initio calculations. We highlight that the atomically sharp domain walls are outside the remits of established spin-Hamiltonian theories and can offer device functionalities unparalleled in ferromagnets.
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Submitted 1 December, 2020;
originally announced December 2020.
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Efficient Electrical Spin-Splitter Based on Non-Relativistic Collinear Antiferromagnetism
Authors:
Rafael González-Hernández,
Libor Šmejkal,
Karel Výborný,
Yuta Yahagi,
Jairo Sinova,
Tomáš Jungwirth,
Jakub Železný
Abstract:
Electrical spin-current generation is among the core phenomena driving the field of spintronics. Using {\em ab initio} calculations we show that a room-temperature metallic collinear antiferromagnet RuO$_2$ allows for highly efficient spin-current generation, arising from anisotropically-split bands with conserved up and down spins along the Néel vector axis. The zero net moment antiferromagnet ac…
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Electrical spin-current generation is among the core phenomena driving the field of spintronics. Using {\em ab initio} calculations we show that a room-temperature metallic collinear antiferromagnet RuO$_2$ allows for highly efficient spin-current generation, arising from anisotropically-split bands with conserved up and down spins along the Néel vector axis. The zero net moment antiferromagnet acts as an electrical spin-splitter with a 34$^\circ$ propagation angle between spin-up and spin-down currents. Correspondingly, the spin-conductivity is a factor of three larger than the record value from a survey of 20,000 non-magnetic spin-Hall materials. We propose a versatile spin-splitter-torque concept utilizing antiferromagnetic RuO$_2$ films interfaced with a ferromagnet.
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Submitted 10 August, 2020; v1 submitted 17 February, 2020;
originally announced February 2020.
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Electrical transport properties of bulk tetragonal CuMnAs
Authors:
J Volny,
D. Wagenknecht,
J Zelezny,
P Harcuba,
E Duverger-Nedellec,
R H Colman,
J Kudrnovsky,
I Turek,
K Uhlirova,
K Vyborny
Abstract:
Temperature-dependent resistivity and magnetoresistance are measured in bulk tetragonal phase of antiferromagnetic CuMnAs and the latter is found to be anisotropic both due to structure and magnetic order. We compare these findings to model calculations with chemical disorder and finite-temperature phenomena included. The finite-temperature ab initio calculations are based on the alloy analogy mod…
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Temperature-dependent resistivity and magnetoresistance are measured in bulk tetragonal phase of antiferromagnetic CuMnAs and the latter is found to be anisotropic both due to structure and magnetic order. We compare these findings to model calculations with chemical disorder and finite-temperature phenomena included. The finite-temperature ab initio calculations are based on the alloy analogy model implemented within the coherent potential approximation and the results are in fair agreement with experimental data. Regarding the anisotropic magnetoresistance (AMR) which reaches a modest magnitude of 0.12%, we phenomenologically employ the Stoner-Wohlfarth model to identify temperature-dependent magnetic anisotropy of our samples and conclude that the field-dependence of AMR is more similar to that of antiferromagnets than ferromagnets, suggesting that the origin of AMR is not related to isolated Mn magnetic moments.
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Submitted 9 April, 2020; v1 submitted 7 January, 2020;
originally announced January 2020.
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Spin-orbitronic materials with record spin-charge conversion from high-throughput ab initio calculations
Authors:
Yang Zhang,
Qiunan Xu,
Klaus Koepernik,
Jakub Železný,
Tomáš Jungwirth,
Claudia Felser,
Jeroen van den Brink,
Yan Sun
Abstract:
The spin Hall effect (SHE) is an important spintronics phenomenon, which allows transforming a charge current into a spin current and vice versa without the use of magnetic materials or magnetic fields. To gain new insight into the physics of the SHE and to identify materials with a substantial spin Hall conductivities (SHC), we performed high-precision, high-throughput ab initio electronic struct…
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The spin Hall effect (SHE) is an important spintronics phenomenon, which allows transforming a charge current into a spin current and vice versa without the use of magnetic materials or magnetic fields. To gain new insight into the physics of the SHE and to identify materials with a substantial spin Hall conductivities (SHC), we performed high-precision, high-throughput ab initio electronic structure calculations of the intrinsic SHC for over 20,000 non-magnetic crystals. The calculations reveal a strong and unexpected relation of the magnitude of the SHC with the crystalline symmetry, which we show exists because large SHC is typically associated with mirror symmetry protected nodal lines in the band structure. From the new developed database, we identify new promising materials. This includes eleven materials with a SHC comparable or even larger than that the up to now record Pt as well as materials with different types of spin currents, which could allow for new types of spin-obitronics devices.
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Submitted 8 April, 2020; v1 submitted 20 September, 2019;
originally announced September 2019.
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Tunning Spin Hall conductivities in GeTe by Ferroelectric Polarization
Authors:
Wenxu Zhang,
Zhao Teng,
Huizhong Zeng,
Jakub Zelezny,
Hongbin Zhang,
Wanli Zhang
Abstract:
Controlling charge-spin current conversion by electric fields is crucial in spintronic devices, which can be realized in diatom ferroelectric semiconductor GeTe where it is established that ferroelectricity can change the spin texture. We demonstrated that the spin Hall conductivity (SHC) can be further tuned by ferroelectricity based on the density functional theory calculations. The spin texture…
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Controlling charge-spin current conversion by electric fields is crucial in spintronic devices, which can be realized in diatom ferroelectric semiconductor GeTe where it is established that ferroelectricity can change the spin texture. We demonstrated that the spin Hall conductivity (SHC) can be further tuned by ferroelectricity based on the density functional theory calculations. The spin texture variation driven by the electric fields was elucidated from the symmetry point of view, highlighting the interlocked spin and orbital degrees of freedom. We observed that the origin of SHC can be attributed to the Rashba effect and the intrinsic spin-orbit coupling. The magnitude of one component of SHC σ_xy^z can reach as large as 100 {\hbar}/e/(Ωcm) in the vicinity of the band edge, which is promising for engineering spintronic devices. Our work on tunable spin transport properties via the ferroelectric polarization brings novel assets into the field of spintronics.
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Submitted 14 November, 2019; v1 submitted 18 July, 2019;
originally announced July 2019.
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Imaging and writing magnetic domains in the non-collinear antiferromagnet Mn$_{\text{3}}$Sn
Authors:
Helena Reichlova,
Tomas Janda,
Joao Godinho,
Anastasios Markou,
Dominik Kriegner,
Richard Schlitz,
Jakub Zelezny,
Zbynek Soban,
Mauricio Bejarano,
Helmut Schultheiss,
Petr Nemec,
Tomas Jungwirth,
Claudia Felser,
Joerg Wunderlich,
Sebastian T. B. Goennenwein
Abstract:
Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a corresponding counterpart in materials with non-collinear spin structure. In addition, new phenomena such as the magnetic spin Hall effect were experimentally obse…
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Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a corresponding counterpart in materials with non-collinear spin structure. In addition, new phenomena such as the magnetic spin Hall effect were experimentally observed in non-collinear AFMs, and the presence of the equivalent to the ferromagnetic spin transfer torque via spin polarized currents was theoretically predicted. In spite of these developments, an interpretation of the rich physical phenomena observed in non-collinear antiferromagnets is challenging, since the microscopic spin arrangement, the magnetic domain distribution, and the domain orientations have proven notoriously difficult to access experimentally. This is all the more problematic, as imaging and writing magnetic domains is of central importance for applications. Successful imaging is a basic requirement to experimentally confirm the spin transfer torque acting on non-collinear domain walls and therefore of eminent interest. Here, we demonstrate that the local magnetic structure of the non-collinear AFM Mn3Sn films can be imaged by scanning thermal gradient microscopy (STGM). The technique is based on scanning a laser spot over the sample's surface, and recording the ensuing thermo-voltage. We image the magnetic structure at a series of different temperatures and show that at room temperature, the domain structure is not affected by the application of moderate magnetic fields. In addition to imaging, we establish a scheme for heat-assisted magnetic recording, using local laser heating in combination with magnetic fields to intentionally write domain patterns into the antiferromagnet.
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Submitted 31 May, 2019;
originally announced May 2019.
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Electrically induced and detected Néel vector reversal in a collinear antiferromagnet
Authors:
J. Godinho,
H. Reichlova,
D. Kriegner,
V. Novak,
K. Olejnik,
Z. Kaspar,
Z. Soban,
P Wadley,
R. P. Campion,
R. M. Otxoa,
P. E. Roy,
J. Zelezny,
T. Jungwirth,
J. Wunderlich
Abstract:
Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed f…
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Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed for spin reversal detection in non-collinear antiferromagnets, is limited to materials that crystalize in ferromagnetic symmetry groups. Here we demonstrate electrical detection of the 180 deg Néel vector reversal in CuMnAs which comprises two collinear spin sublattices and belongs to an antiferromagnetic symmetry group with no net magnetic moment. We detect the spin reversal by measuring a second-order magnetotransport coefficient whose presence is allowed in systems with broken space inversion symmetry. The phenomenology of the non-linear transport effect we observe in CuMnAs is consistent with a microscopic scenario combining anisotropic magneto-resistance (AMR) with a transient tilt of the Néel vector due to a current-induced, staggered spin-orbit field. We use the same staggered spin-orbit field, but of a higher amplitude, for the electrical switching between reversed antiferromagnetic states which are stable and show no sign of decay over 25 hour probing times.
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Submitted 7 June, 2018;
originally announced June 2018.
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Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems
Authors:
A. Manchon,
J. Zelezný,
I. M. Miron,
T. Jungwirth,
J. Sinova,
A. Thiaville,
K. Garello,
P. Gambardella
Abstract:
Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics. Current-induced spin-orbit torques mediate the transfer of angular momentum from the lattice to the spin system, leading to sustained magnetic oscillations or switch…
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Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics. Current-induced spin-orbit torques mediate the transfer of angular momentum from the lattice to the spin system, leading to sustained magnetic oscillations or switching of ferromagnetic as well as antiferromagnetic structures. The manipulation of magnetic order, domain walls and skyrmions by spin-orbit torques provides evidence of the microscopic interactions between charge and spin in a variety of materials and opens novel strategies to design spintronic devices with potentially high impact in data storage, nonvolatile logic, and magnonic applications. This paper reviews recent progress in the field of spin-orbitronics, focusing on theoretical models, material properties, and experimental results obtained on bulk noncentrosymmetric conductors and multilayer heterostructures, including metals, semiconductors, and topological insulator systems. Relevant aspects for improving the understanding and optimizing the efficiency of nonequilibrium spin-orbit phenomena in future nanoscale devices are also discussed.
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Submitted 24 April, 2019; v1 submitted 29 January, 2018;
originally announced January 2018.
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Band structure of CuMnAs probed by optical and photoemission spectroscopy
Authors:
M. Veis,
J. Minar,
G. Steciuk,
L. Palatinus,
C. Rinaldi,
M. Cantoni,
D. Kriegner,
K. K. Tikuisis,
J. Hamrle,
M. Zahradnik,
R. Antos,
J. Zelezny,
L. Smejkal,
P. Wadley,
R. P. Campion,
C. Frontera,
K. Uhlirova,
T. Duchon,
P. Kuzel,
V. Novak,
T. Jungwirth,
K. Vyborny
Abstract:
Tetragonal phase of CuMnAs progressively appears as one of the key materials for antiferromagnetic spintronics due to efficient current-induced spin-orbit torques whose existence can be directly inferred from crystal symmetry. Theoretical understanding of spintronic phenomena in this material, however, relies on the detailed knowledge of electronic structure (band structure and corresponding wave…
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Tetragonal phase of CuMnAs progressively appears as one of the key materials for antiferromagnetic spintronics due to efficient current-induced spin-orbit torques whose existence can be directly inferred from crystal symmetry. Theoretical understanding of spintronic phenomena in this material, however, relies on the detailed knowledge of electronic structure (band structure and corresponding wave functions) which has so far been tested only to a limited extent. We show that AC permittivity (obtained from ellipsometry) and UV photoelectron spectra agree with density functional calculations. Together with the x-ray diffraction and precession electron diffraction tomography, our analysis confirms recent theoretical claim [Phys.Rev.B 96, 094406 (2017)] that copper atoms occupy lattice positions in the basal plane of the tetragonal unit cell.
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Submitted 21 December, 2017; v1 submitted 4 December, 2017;
originally announced December 2017.
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Spin-transport, spin-torque and memory in antiferromagnetic devices: Part of a collection of reviews on antiferromagnetic spintronics
Authors:
J. Železný,
P. Wadley,
K. Olejník. A. Hoffmann,
H. Ohno
Abstract:
Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets that represent the more common form of magnetically ordered materials, have so far found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of a…
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Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets that represent the more common form of magnetically ordered materials, have so far found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstrations of the electrical switching and electrical detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated in antiferromagnets are inherently multilevel which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of the ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanics origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices
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Submitted 30 May, 2017;
originally announced May 2017.
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Spin Hall effect emerging from a chiral magnetic lattice without spin-orbit coupling
Authors:
Yang Zhang,
Jakub Zelezny,
Yan Sun,
Jeroen van den Brink,
Binghai Yan
Abstract:
The spin Hall effect (SHE), which converts a charge current into a transverse spin current, has long been believed to be a phenomenon induced by the spin--orbit coupling. Here, we propose an alternative mechanism to realize the intrinsic SHE through a chiral magnetic structure that breaks the spin rotation symmetry. No spin--orbit coupling is needed even when the scalar spin chirality vanishes, di…
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The spin Hall effect (SHE), which converts a charge current into a transverse spin current, has long been believed to be a phenomenon induced by the spin--orbit coupling. Here, we propose an alternative mechanism to realize the intrinsic SHE through a chiral magnetic structure that breaks the spin rotation symmetry. No spin--orbit coupling is needed even when the scalar spin chirality vanishes, different from the case of the topological Hall effect. In known chiral antiferromagnetic compounds Mn$_3X$ ($X=$ Ga, Ge, and Sn), for example, we indeed obtain large spin Hall conductivities based on \textit{ab initio} calculations. Apart further develo** the conceptual understanding of the SHE, our work suggests an alternative strategy to design spin Hall materials without involving heavy elements, which may be advantageous for technological applications.
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Submitted 21 June, 2021; v1 submitted 12 April, 2017;
originally announced April 2017.
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Control of antiferromagnetic spin axis orientation in bilayer Fe/CuMnAs films
Authors:
P. Wadley,
K. W. Edmonds,
M. R. Shahedkhah,
R. P. Campion,
B. L. Gallagher,
J. Zelezny,
J. Kunes,
V. Novak,
T. Jungwirth,
V. Saidl,
P. Nemec,
F. Maccherozzi,
S. S. Dhesi
Abstract:
Using x-ray magnetic circular and linear dichroism techniques, we demonstrate a collinear exchange coupling between an epitaxial antiferromagnet, tetragonal CuMnAs, and an Fe surface layer. A small uncompensated Mn magnetic moment is observed which is antiparallel to the Fe magnetization. The staggered magnetization of the 5nm thick CuMnAs layer is rotatable under small magnetic fields, due to the…
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Using x-ray magnetic circular and linear dichroism techniques, we demonstrate a collinear exchange coupling between an epitaxial antiferromagnet, tetragonal CuMnAs, and an Fe surface layer. A small uncompensated Mn magnetic moment is observed which is antiparallel to the Fe magnetization. The staggered magnetization of the 5nm thick CuMnAs layer is rotatable under small magnetic fields, due to the interlayer exchange coupling. This allows us to obtain the x-ray magnetic linear dichroism spectra for different crystalline orientations of CuMnAs in the (001) plane.
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Submitted 10 February, 2017;
originally announced February 2017.
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Spin-polarized current in non-collinear antiferromagnets
Authors:
Jakub Zelezny,
Yang Zhang,
Claudia Felser,
Binghai Yan
Abstract:
Noncollinear antiferromagnets, such as Mn$_3$Sn and Mn$_3$Ir, were recently shown to be analogous to ferromagnets in that they have a large anomalous Hall effect. Here we show that these materials are similar to ferromagnets in another aspect: the charge current in these materials is spin-polarized. In addition, we show that the same mechanism that leads to the spin-polarized current also leads to…
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Noncollinear antiferromagnets, such as Mn$_3$Sn and Mn$_3$Ir, were recently shown to be analogous to ferromagnets in that they have a large anomalous Hall effect. Here we show that these materials are similar to ferromagnets in another aspect: the charge current in these materials is spin-polarized. In addition, we show that the same mechanism that leads to the spin-polarized current also leads to a transverse spin current, which has a distinct symmetry and origin from the conventional spin Hall effect. We illustrate the existence of the spin-polarized current and the transverse spin current by performing \emph{ab initio} microscopic calculations and by analyzing the symmetry. We discuss possible applications of these novel spin currents, such as an antiferromagnetic metallic or tunneling junction.
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Submitted 28 September, 2018; v1 submitted 1 February, 2017;
originally announced February 2017.
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Electric control of Dirac quasiparticles by spin-orbit torque in an antiferromagnet
Authors:
Libor Šmejkal,
Jakub Železný,
Jairo Sinova,
Tomáš Jungwirth
Abstract:
Spin-orbitronics and Dirac quasiparticles are two fields of condensed matter physics initiated independently about a decade ago. Here we predict that Dirac quasiparticles can be controlled by the spin-orbit torque reorientation of the Néel vector in an antiferromagnet. Using CuMnAs as an example, we formulate symmetry criteria allowing for the co-existence of Dirac quasiparticles and Néel spin-orb…
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Spin-orbitronics and Dirac quasiparticles are two fields of condensed matter physics initiated independently about a decade ago. Here we predict that Dirac quasiparticles can be controlled by the spin-orbit torque reorientation of the Néel vector in an antiferromagnet. Using CuMnAs as an example, we formulate symmetry criteria allowing for the co-existence of Dirac quasiparticles and Néel spin-orbit torques. We identify the non-symmorphic crystal symmetry protection of Dirac band crossings whose on and off switching is mediated by the Néel vector reorientation. We predict that this concept, verified by minimal model and density functional calculations in the CuMnAs semimetal antiferromagnet, can lead to a topological metal-insulator transition driven by the Néel vector and to the corresponding topological anisotropic magnetoresistance.
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Submitted 25 October, 2016;
originally announced October 2016.
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Strong, anisotropic anomalous Hall effect and spin Hall effect in chiral antiferromagnetic compounds Mn$_3X$ ($X$ = Ge, Sn, Ga, Ir, Rh and Pt)
Authors:
Yang Zhang,
Yan Sun,
Hao Yang,
Jakub Železný,
Stuart P. P. Parkin,
Claudia Felser,
Binghai Yan
Abstract:
We have carried out a comprehensive study of the intrinsic anomalous Hall effect and spin Hall effect of several chiral antiferromagnetic compounds, Mn$_3X$ ($X$ = Ge, Sn, Ga, Ir, Rh and Pt) by $ab~initio$ band structure and Berry phase calculations. These studies reveal large and anisotropic values of both the intrinsic anomalous Hall effect and spin Hall effect. The Mn$_3X$ materials exhibit a n…
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We have carried out a comprehensive study of the intrinsic anomalous Hall effect and spin Hall effect of several chiral antiferromagnetic compounds, Mn$_3X$ ($X$ = Ge, Sn, Ga, Ir, Rh and Pt) by $ab~initio$ band structure and Berry phase calculations. These studies reveal large and anisotropic values of both the intrinsic anomalous Hall effect and spin Hall effect. The Mn$_3X$ materials exhibit a non-collinear antiferromagnetic order which, to avoid geometrical frustration, forms planes of Mn moments that are arranged in a Kagome-type lattice. With respect to these Kagome planes, we find that both the anomalous Hall conductivity (AHC) and the spin Hall conductivity (SHC) are quite anisotropic for any of these materials. Based on our calculations, we propose how to maximize AHC and SHC for different materials. The band structures and corresponding electron filling, that we show are essential to determine the AHC and SHC, are compared for these different compounds. We point out that Mn$_3$Ga shows a large SHC of about 600 $(\hbar/e)(Ω\cdot cm)^{-1}$. Our work provides insights into the realization of strong anomalous Hall effects and spin Hall effects in chiral antiferromagetic materials.
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Submitted 4 April, 2017; v1 submitted 13 October, 2016;
originally announced October 2016.
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Optical determination of the Neel vector in a CuMnAs thin-film antiferromagnet
Authors:
V. Saidl,
P. Nemec,
P. Wadley,
V. Hills,
R. P. Campion,
V. Novak,
K. W. Edmonds,
F. Maccherozzi,
S. S. Dhesi,
B. L. Gallagher,
F. Trojanek,
J. Kunes,
J. Zelezny,
P. Maly,
T. Jungwirth
Abstract:
Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices. Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields, lead to the insensitivity to magnetic field perturbations, multi-level stability, ultra-fast spin dynamics and other favorable characteristics which may find u…
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Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices. Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields, lead to the insensitivity to magnetic field perturbations, multi-level stability, ultra-fast spin dynamics and other favorable characteristics which may find utility in fields ranging from magnetic memories to optical signal processing. However, the absence of a net magnetic moment and the ultra-short magnetization dynamics timescales make antiferromagnets notoriously difficult to study by common magnetometers or magnetic resonance techniques. In this paper we demonstrate the experimental determination of the Neel vector in a thin film of antiferromagnetic CuMnAs which is the prominent material used in the first realization of antiferromagnetic memory chips. We employ a femtosecond pump-probe magneto-optical experiment based on magnetic linear dichroism. This table-top optical method is considerably more accessible than the traditionally employed large scale facility techniques like neutron diffraction and X-ray magnetic dichroism measurements. This optical technique allows an unambiguous direct determination of the Neel vector orientation in thin antiferromagnetic films utilized in devices directly from measured data without fitting to a theoretical model.
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Submitted 5 August, 2016;
originally announced August 2016.
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Spin-orbit torques in locally and globally non-centrosymmetric crystals: Antiferromagnets and ferromagnets
Authors:
J. Železný,
H. Gao,
Aurélien Manchon,
Frank Freimuth,
Yuriy Mokrousov,
J. Zemen,
J. Mašek,
Jairo Sinova,
T. Jungwirth
Abstract:
One of the main obstacles that prevents practical applications of antiferromagnets is the difficulty of manipulating the magnetic order parameter. Recently, following the theoretical prediction [J. Železný et al., PRL 113, 157201 (2014)], the electrical switching of magnetic moments in an antiferromagnet has been demonstrated [P. Wadley et al., Science 351, 587 (2016)]. The switching is due to the…
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One of the main obstacles that prevents practical applications of antiferromagnets is the difficulty of manipulating the magnetic order parameter. Recently, following the theoretical prediction [J. Železný et al., PRL 113, 157201 (2014)], the electrical switching of magnetic moments in an antiferromagnet has been demonstrated [P. Wadley et al., Science 351, 587 (2016)]. The switching is due to the so-called spin-orbit torque, which has been extensively studied in ferromagnets. In this phenomena a non-equilibrium spin-polarization exchange coupled to the ordered local moments is induced by current, hence exerting a torque on the order parameter. Here we give a general systematic analysis of the symmetry of the spin-orbit torque in locally and globally non-centrosymmetric crystals. We study when the symmetry allows for a nonzero torque, when is the torque effective, and its dependence on the applied current direction and orientation of magnetic moments. For comparison, we consider both antiferromagnetic and ferromagnetic orders. In two representative model crystals we perform microscopic calculations of the spin-orbit torque to illustrate its symmetry properties and to highlight conditions under which the spin-orbit torque can be efficient for manipulating antiferromagnetic moments.
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Submitted 26 April, 2016;
originally announced April 2016.
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Room-temperature spin-orbit torque in NiMnSb
Authors:
C. Ciccarelli,
L. Anderson,
V. Tshitoyan,
A. J. Ferguson,
F. Gerhard,
C. Gould,
L. W. Molenkamp,
J. Gayles,
J. Zelezny,
L. Smejkal,
Z. Yuan,
J. Sinova,
F. Freimuth,
T. Jungwirth
Abstract:
Materials that crystalize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneoulsy, the two atomic sites in the unit cell of these crystals form inversion partners which gives rise to relativistic non-equilibrium spin phenomena highly relevant for magnetic memories and other spintronic devices. When the inversion-partner sit…
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Materials that crystalize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneoulsy, the two atomic sites in the unit cell of these crystals form inversion partners which gives rise to relativistic non-equilibrium spin phenomena highly relevant for magnetic memories and other spintronic devices. When the inversion-partner sites are occupied by the same atomic species, electrical current can generate local spin polarization with the same magnitude and opposite sign on the two inversion-partner sites. In CuMnAs, which shares this specific crystal symmetry of the Si lattice, the effect led to the demonstration of electrical switching in an antiferromagnetic memory at room temperature. When the inversion-partner sites are occupied by different atoms, a non-zero global spin-polarization is generated by the applied current which can switch a ferromagnet, as reported at low temperatures in the diluted magnetic semiconductor (Ga,Mn)As. Here we demonstrate the effect of the global current-induced spin polarization in a counterpart crystal-symmetry material NiMnSb which is a member of the broad family of magnetic Heusler compounds. It is an ordered high-temperature ferromagnetic metal whose other favorable characteristics include high spin-polarization and low dam** of magnetization dynamics. Our experiments are performed on strained single-crystal epilayers of NiMnSb grown on InGaAs. By performing all-electrical ferromagnetic resonance measurements in microbars patterned along different crystal axes we detect room-temperature spin-orbit torques generated by effective fields of the Dresselhaus symmetry. The measured magnitude and symmetry of the current-induced torques are consistent with our relativistic density-functional theory calculations.
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Submitted 12 October, 2015;
originally announced October 2015.
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Giant reversible nanoscale piezoresistance at room temperature in Sr2IrO4 thin films
Authors:
Neus Domingo,
Laura López-Mir,
Marcos Paradinas,
Vaclav Holy,
Jakuv Zelezny,
Di Yi,
Siriyara J. Suresha,
Jian Liu,
Claudy Rayan-Serrao,
Ramamoorthy Ramesh,
Carmen Ocal,
Xavi Martí,
Gustau Catalan
Abstract:
Layered iridates have been the subject of intense scrutiny on account of their unusually strong spin-orbit coupling, which opens up a narrow gap in a material that would otherwise be a metal. This insulating state is very sensitive to external perturbations. Here, we show that vertical compression at the nanoscale, delivered using the tip of a standard scanning probe microscope, is capable of indu…
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Layered iridates have been the subject of intense scrutiny on account of their unusually strong spin-orbit coupling, which opens up a narrow gap in a material that would otherwise be a metal. This insulating state is very sensitive to external perturbations. Here, we show that vertical compression at the nanoscale, delivered using the tip of a standard scanning probe microscope, is capable of inducing a five orders of magnitude change in the room temperature resistivity of Sr2IrO4. The extreme sensitivity of the electronic structure to anisotropic deformations opens up a new angle of interest on this material, and the giant and fully reversible perpendicular piezoresistance makes iridates a promising material for room temperature piezotronic devices.
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Submitted 20 April, 2015;
originally announced April 2015.
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Electrical switching of an antiferromagnet
Authors:
Peter Wadley,
Bryn Howells,
Jakub Zelezny,
Carl Andrews,
Victoria Hills,
Richard P. Campion,
Vit Novak,
Frank Freimuth,
Yuriy Mokrousov,
Andrew W. Rushforth,
Kevin W. Edmonds,
Bryan L. Gallagher,
Tomas Jungwirth
Abstract:
Louis Neel pointed out in his Nobel lecture that while abundant and interesting from a theoretical viewpoint, antiferromagnets did not seem to have any applications. Indeed, the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization make antiferromagnets hard to control by tools common in ferromagnets. Remarkably, Neel in his lecture provides the ke…
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Louis Neel pointed out in his Nobel lecture that while abundant and interesting from a theoretical viewpoint, antiferromagnets did not seem to have any applications. Indeed, the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization make antiferromagnets hard to control by tools common in ferromagnets. Remarkably, Neel in his lecture provides the key which, as we show here, allows us to control antiferromagnets by electrical means analogous to those which paved the way to the development of ferromagnetic spintronics applications. The key noted by Neel is the equivalence of antiferromagnets and ferromagnets for effects that are an even function of the magnetic moment. Based on even-in-moment relativistic transport phenomena, we demonstrate room-temperature electrical switching between two stable configurations combined with electrical read-out in antiferromagnetic CuMnAs thin film devices. Our magnetic memory is insensitive to and produces no magnetic field perturbations which illustrates the unique merits of antiferromagnets for spintronics.
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Submitted 20 July, 2015; v1 submitted 12 March, 2015;
originally announced March 2015.
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Relativistic Neel-order fields induced by electrical current in antiferromagnets
Authors:
J. Zelezny,
H. Gao,
K. Vyborny,
J. Zemen,
J. Masek,
A. Manchon,
J. Wunderlich,
J. Sinova,
T. Jungwirth
Abstract:
We predict that a lateral electrical current in antiferromagnets can induce non-equilibrium Néel order fields, i.e. fields whose sign alternates between the spin sublattices, which can trigger ultra-fast spin-axis reorientation. Based on microscopic transport theory calculations we identify staggered current-induced fields analogous to the intra-band and to the intrinsic inter-band spin-orbit fiel…
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We predict that a lateral electrical current in antiferromagnets can induce non-equilibrium Néel order fields, i.e. fields whose sign alternates between the spin sublattices, which can trigger ultra-fast spin-axis reorientation. Based on microscopic transport theory calculations we identify staggered current-induced fields analogous to the intra-band and to the intrinsic inter-band spin-orbit fields previously reported in ferromagnets with a broken inversion-symmetry crystal. To illustrate their rich physics and utility, we considered bulk Mn2Au with the two spin sublattices forming inversion partners, and a 2D square-lattice antiferromagnet with broken structural inversion symmetry modelled by a Rashba spin-orbit coupling. We propose an AFM memory device with electrical writing and reading.
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Submitted 30 October, 2014;
originally announced October 2014.
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Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction
Authors:
V. P. Amin,
J. Zemen,
J. Železný,
T. Jungwirth,
Jairo Sinova
Abstract:
We theoretically investigate the Tunneling Anisotropic Magneto-Seebeck effect in a realistically-modeled CoPt|MgO|Pt tunnel junction using coherent transport calculations. For comparison we study the tunneling magneto-Seebeck effect in CoPt|MgO|CoPt as well. We find that the magneto-Seebeck ratio of CoPt|MgO|Pt exceeds that of CoPt|MgO|CoPt for small barrier thicknesses, reaching 175% at room temp…
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We theoretically investigate the Tunneling Anisotropic Magneto-Seebeck effect in a realistically-modeled CoPt|MgO|Pt tunnel junction using coherent transport calculations. For comparison we study the tunneling magneto-Seebeck effect in CoPt|MgO|CoPt as well. We find that the magneto-Seebeck ratio of CoPt|MgO|Pt exceeds that of CoPt|MgO|CoPt for small barrier thicknesses, reaching 175% at room temperature. This result provides a sharp contrast to the magnetoresistance, which behaves oppositely for all barrier thicknesses and differs by one order of magnitude between devices. Here the magnetoresistance results from differences in transmission brought upon by changing the tunnel junction's magnetization configuration. The magneto-Seebeck effect results from variations in asymmetry of the energy-dependent transmission instead. We report that this difference in origin allows for CoPt|MgO|Pt to possess strong thermal magnetic-transport anisotropy.
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Submitted 22 April, 2014;
originally announced April 2014.
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Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs
Authors:
P. Wadley,
V. Novák,
R. P. Campion,
C. Rinaldi,
X. Martí,
H. Reichlová,
J. Zelezný,
J. Gazquez,
M. A. Roldan,
M. Varela,
D. Khalyavin,
S. Langridge,
D. Kriegner,
F. Máca,
J. Masek,
R. Bertacco,
V. Holy,
A. W. Rushforth,
K. W. Edmonds,
B. L. Gallagher,
C. T. Foxon,
J. Wunderlich,
T. Jungwirth
Abstract:
Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and c…
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Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Neél temperature. Combined with our demonstration of room-temperature exchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics.
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Submitted 14 February, 2014;
originally announced February 2014.
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Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure
Authors:
X. Marti,
I. Fina,
Di Yi,
Jian Liu,
Jiun-Haw Chu,
C. Rayan-Serrao,
S. Suresha,
J. Železný,
T. Jungwirth,
J. Fontcuberta,
R. Ramesh
Abstract:
Lord Kelvin with his discovery of the anisotropic magnetoresistance (AMR) phenomenon in Ni and Fe was 70 years ahead of the formulation of relativistic quantum mechanics the effect stems from, and almost one and a half century ahead of spintronics whose first commercial applications relied on the AMR. Despite the long history and importance in magnetic sensing and memory technologies, the microsco…
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Lord Kelvin with his discovery of the anisotropic magnetoresistance (AMR) phenomenon in Ni and Fe was 70 years ahead of the formulation of relativistic quantum mechanics the effect stems from, and almost one and a half century ahead of spintronics whose first commercial applications relied on the AMR. Despite the long history and importance in magnetic sensing and memory technologies, the microscopic understanding of the AMR has struggled to go far beyond the basic notion of a relativistic magnetotransport phenomenon arising from combined effects on diffusing carriers of spin-orbit coupling and broken symmetry of a metallic ferromagnet. Our work demonstrates that even this seemingly generic notion of the AMR phenomenon needs revisiting as we observe the ohmic AMR effect in a nano-scale film of an antiferromagnetic (AFM) semiconductor Sr2IrO4 (SIO). Our work opens the recently proposed path for integrating semiconducting and spintronic technologies in AFMs. SIO is a particularly favorable material for exploring this path since its semiconducting nature is entangled with the AFM order and strong spin-orbit coupling. For the observation of the low-field Ohmic AMR in SIO we prepared an epitaxial heterostructure comprising a nano-scale SIO film on top of an epilayer of a FM metal La2/3Sr1/3MnO3 (LSMO). This allows the magnetic field control of the orientation of AFM spins in SIO via the exchange spring effect at the FM-AFM interface.
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Submitted 19 March, 2013;
originally announced March 2013.
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Epitaxy-distorted spin-orbit Mott insulator in Sr2IrO4 thin films
Authors:
C. Rayan Serrao,
Jian Liu,
J. T. Heron,
G. Singh-Bhalla,
A. Yadav,
S. J. Suresha,
R. J. Paull,
D. Yi,
J. -H. Chu,
M. Trassin,
A. Vishwanath,
E. Arenholz,
C. Frontera,
J. Železný,
T. Jungwirth,
X. Marti,
R. Ramesh
Abstract:
High quality epitaxial thin films of Jeff=1/2 Mott insulator Sr2IrO4 with increasing in-plane tensile strain have been grown on top of SrTiO3(001) substrates. Increasing the in-plane tensile strain up to ~0.3% was observed to drop the c/a tetragonality by 1.2 %. X-ray absorption spectroscopy detected a strong reduction of the linear dichroism upon increasing in-plane tensile strain towards a reduc…
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High quality epitaxial thin films of Jeff=1/2 Mott insulator Sr2IrO4 with increasing in-plane tensile strain have been grown on top of SrTiO3(001) substrates. Increasing the in-plane tensile strain up to ~0.3% was observed to drop the c/a tetragonality by 1.2 %. X-ray absorption spectroscopy detected a strong reduction of the linear dichroism upon increasing in-plane tensile strain towards a reduced anisotropy in the local electronic structure. While the most relaxed thin film shows a consistent dependence with previously reported single crystal bulk measurements, electrical transport reveals a charge gap reduction from 200 meV down to 50 meV for the thinnest and most epitaxy-distorted film. We argue that the reduced tetragonality plays a major role in the change of the electronic structure, which is reflected in the change of the transport properties. Our work opens the possibility for exploiting epitaxial strain as a tool for both structural and functional manipulation of spin-orbit Mott systems.
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Submitted 24 January, 2013; v1 submitted 29 September, 2012;
originally announced October 2012.
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On the similarity of Sturm-Liouville operators with non-Hermitian boundary conditions to self-adjoint and normal operators
Authors:
D. Krejcirik,
P. Siegl,
J. Zelezny
Abstract:
We consider one-dimensional Schroedinger-type operators in a bounded interval with non-self-adjoint Robin-type boundary conditions. It is well known that such operators are generically conjugate to normal operators via a similarity transformation. Motivated by recent interests in quasi-Hermitian Hamiltonians in quantum mechanics, we study properties of the transformations in detail. We show that t…
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We consider one-dimensional Schroedinger-type operators in a bounded interval with non-self-adjoint Robin-type boundary conditions. It is well known that such operators are generically conjugate to normal operators via a similarity transformation. Motivated by recent interests in quasi-Hermitian Hamiltonians in quantum mechanics, we study properties of the transformations in detail. We show that they can be expressed as the sum of the identity and an integral Hilbert-Schmidt operator. In the case of parity and time reversal boundary conditions, we establish closed integral-type formulae for the similarity transformations, derive the similar self-adjoint operator and also find the associated "charge conjugation" operator, which plays the role of fundamental symmetry in a Krein-space reformulation of the problem.
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Submitted 24 August, 2011;
originally announced August 2011.
