-
Antiferromagnetic nanoscale bit arrays of magnetoelectric Cr$_2$O$_3$ thin films
Authors:
Peter Rickhaus,
Oleksandr V. Pylypovskyi,
Gediminas Seniutinas,
Vicent Borras,
Paul Lehmann,
Kai Wagner,
Liza Žaper,
Paulina J. Prusik,
Pavlo Makushko,
Igor Veremchuk,
Tobias Kosub,
René Hübner,
Denis D. Sheka,
Patrick Maletinsky,
Denys Makarov
Abstract:
Magnetism of oxide antiferromagnets (AFMs) has been studied in single crystals and extended thin films. The properties of AFM nanostructures still remain underexplored. Here, we report on the fabrication and magnetic imaging of granular 100-nm-thick magnetoelectric Cr$_2$O$_3$ films patterned in circular bits with diameters ranging from 500 down to 100 nm. With the change of the lateral size, the…
▽ More
Magnetism of oxide antiferromagnets (AFMs) has been studied in single crystals and extended thin films. The properties of AFM nanostructures still remain underexplored. Here, we report on the fabrication and magnetic imaging of granular 100-nm-thick magnetoelectric Cr$_2$O$_3$ films patterned in circular bits with diameters ranging from 500 down to 100 nm. With the change of the lateral size, the domain structure evolves from a multidomain state for larger bits to a single domain state for the smallest bits. Based on spin-lattice simulations, we show that the physics of the domain pattern formation in granular AFM bits is primarily determined by the energy dissipation upon cooling, which results in motion and expelling of AFM domain walls of the bit. Our results provide a way towards the fabrication of single domain AFM-bit-patterned memory devices and the exploration of the interplay between AFM nanostructures and their geometric shape.
△ Less
Submitted 27 June, 2024;
originally announced June 2024.
-
A quantum sensing metrology for magnetic memories
Authors:
Vicent J Borràs,
Robert Carpenter,
Liza Žaper,
Siddharth Rao,
Sébastien Couet,
Mathieu Munsch,
Patrick Maletinsky,
Peter Rickhaus
Abstract:
Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by device-to-device variability rooted in the stochastic nature of the MRAM writing process into nanoscale magnetic layers. Here, we introduce a non-contact metrology technique d…
▽ More
Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by device-to-device variability rooted in the stochastic nature of the MRAM writing process into nanoscale magnetic layers. Here, we introduce a non-contact metrology technique deploying Scanning NV Magnetometry (SNVM) to investigate MRAM performance at the individual bit level. We demonstrate magnetic reversal characterization in individual, < 60 nm sized bits, to extract key magnetic properties, thermal stability, and switching statistics, and thereby gauge bit-to-bit uniformity. We showcase the performance of our method by benchmarking two distinct bit etching processes immediately after pattern formation. Unlike previous methods, our approach unveils marked differences in switching behaviour of fully contacted MRAM devices stemming from these processes. Our findings highlight the potential of nanoscale quantum sensing of MRAM devices for early-stage screening in the processing line, paving the way for future incorporation of this nanoscale characterization tool in the semiconductor industry.
△ Less
Submitted 27 June, 2023;
originally announced June 2023.
-
Scanning NV magnetometry of focused-electron-beam-deposited cobalt nanomagnets
Authors:
Liza Žaper,
Peter Rickhaus,
Marcus Wyss,
Boris Gross,
Martino Poggio,
Floris Braakman
Abstract:
Focused-electron-beam-induced deposition is a promising technique for patterning nanomagnets for spin qubit control in a single step. We fabricate cobalt nanomagnets in such a process, obtaining cobalt contents and saturation magnetizations comparable to or higher than those typically obtained using electron-beam lithography. We characterize the nanomagnets using transmission electron microscopy a…
▽ More
Focused-electron-beam-induced deposition is a promising technique for patterning nanomagnets for spin qubit control in a single step. We fabricate cobalt nanomagnets in such a process, obtaining cobalt contents and saturation magnetizations comparable to or higher than those typically obtained using electron-beam lithography. We characterize the nanomagnets using transmission electron microscopy and image their stray magnetic field using scanning NV magnetometry, finding good agreement with micromagnetic simulations. The magnetometry reveals the presence of magnetic domains and halo side-deposits, which are common for this fabrication technique. Finally, we estimate dephasing times for electron spin qubits in the presence of disordered stray fields due to these side-deposits.
△ Less
Submitted 23 June, 2023; v1 submitted 11 June, 2023;
originally announced June 2023.
