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Photoemission study on pristine and Ni-doped SrTiO$_{3}$ thin films
Authors:
F. Alarab,
K. Hricovini,
B. Leikert,
L. Nicolai,
M. Fanciulli,
O. Heckmann,
M. Richter,
L. Prušakova,
Z. Jansa,
P. Šutta,
J. Rault,
P. Lefevre,
M. Muntwiller,
R. Claessen,
J. Minár
Abstract:
We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron sputtering, the mean size of the crystallites increases with the concentration of Ni. To determine the electronic band structure of SrTiO$_{3}$ films doped with Ni, high…
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We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron sputtering, the mean size of the crystallites increases with the concentration of Ni. To determine the electronic band structure of SrTiO$_{3}$ films doped with Ni, high quality ordered pristine and SrTiO3:Ni$_{x}$ films with x=0.06 and 0.12 were prepared by pulsed laser deposition. Electronic band structure calculations for the ground state, as well as one-step model photoemission calculations, which were obtained by means of the Korringa-Khon-Rostoker Greens's function method, predicted the formation of localised $3d$-impurity bands in the band gap of SrTiO$_{3}$ close to the valence band maxima. The measured valence bands at the resonance Ni2p excitation and band dispersion confirm these findings.
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Submitted 25 November, 2020;
originally announced November 2020.
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Study and characterization of SrTiO3 surface
Authors:
F. Alarab,
J. Minar,
P. Sutta,
L. Prusakova,
R. Medlın,
O. Heckmann,
C. Richter,
K. Hricovini
Abstract:
The two-dimensional electron gas (2DEG) at oxides interfaces and surfaces has attracted large attention in physics and research due to its unique electronic properties and possible application in optoelectronics and nanoelectronics. The origin of 2DEGes at oxide interfaces has been attributed to the well known "polar catastrophe" mechanism. On the other hand, recently a 2DEG was also found on a cl…
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The two-dimensional electron gas (2DEG) at oxides interfaces and surfaces has attracted large attention in physics and research due to its unique electronic properties and possible application in optoelectronics and nanoelectronics. The origin of 2DEGes at oxide interfaces has been attributed to the well known "polar catastrophe" mechanism. On the other hand, recently a 2DEG was also found on a clean SrTiO3(001) surface where it is formed due to oxygen vacancies. However, these 2DEG systems have been until now found mostly on atomically perfect crystalline samples usually grown by pulsed laser deposition or molecular beam epitaxy i.e. samples which are difficult to be prepared and require specific experimental conditions. Here, we report on the fabrication of SrTiO3 thin films deposited by magnetron sputtering which is suitable for mass-production of samples adapted for nanoelectronic applications. The characterization of their structural and electronic properties was done and compared to those of SrTiO3 single crystals. XRD patterns and SEM micrography show that the deposited films are amorphous and their structure changes to polycrystalline by heating them at 900 °C. Photoemission spectroscopy (XPS and UPS) was used to study the electronic properties of the films and the crystal. In both, we observe the 2DEG system at Fermi level and the formation of Ti3+ states after heating the surface at 900 °C.
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Submitted 30 June, 2018;
originally announced July 2018.
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A topological material in the III-V family: heteroepitaxial InBi on InAs
Authors:
Laurent Nicolaï,
Ján Minár,
Maria Christine Richter,
Uros Djukic,
Olivier Heckmann,
Jean-Michel Mariot,
Johan Adell,
Mats Leandersson,
Janusz Sadowski,
Jürgen Braun,
Hubert Ebert,
Jonathan D. Denlinger,
Ivana Vobornik,
Jun Fujii,
Pavol Šutta,
Gavin R. Bell,
Martin Gmitra,
Karol Hricovini
Abstract:
InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M bar high symmetry point. This demonstrates a heteroepitaxial system entirely in the III-V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradic…
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InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M bar high symmetry point. This demonstrates a heteroepitaxial system entirely in the III-V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III-V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of InBi(001) terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the one-step model of photoemission clarify the relationship between the InBi(001) surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi-Bi hop** terms, and no Bi-In interaction, gives a deeper insight into the spin texture.
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Submitted 20 March, 2024; v1 submitted 8 June, 2018;
originally announced June 2018.
