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Altermagnetic lifting of Kramers spin degeneracy
Authors:
J. Krempaský,
L. Šmejkal,
S. W. D'Souza,
M. Hajlaoui,
G. Springholz,
K. Uhlířová,
F. Alarab,
P. C. Constantinou,
V. Strokov,
D. Usanov,
W. R. Pudelko,
R. González-Hernández,
A. Birk Hellenes,
Z. Jansa,
H. Reichlová,
Z. Šobáň,
R. D. Gonzalez Betancourt,
P. Wadley,
J. Sinova,
D. Kriegner,
J. Minár,
J. H. Dil,
T. Jungwirth
Abstract:
Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, lifted Kramers spin-degeneracy has been considered to originate from two possible internal…
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Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, lifted Kramers spin-degeneracy has been considered to originate from two possible internal symmetry-breaking mechanisms. The first one refers to time-reversal symmetry breaking by magnetization of ferromagnets, and tends to be strong due to the non-relativistic exchange-coupling origin. The second mechanism applies to crystals with broken inversion symmetry, and tends to be comparatively weaker as it originates from the relativistic spin-orbit coupling. A recent theory work based on spin-symmetry classification has identified an unconventional magnetic phase, dubbed altermagnetic, that allows for lifting the Kramers spin degeneracy without net magnetization and inversion-symmetry breaking. Here we provide the confirmation using photoemission spectroscopy and ab initio calculations. We identify two distinct unconventional mechanisms of lifted Kramers spin degeneracy generated by the altermagnetic phase of centrosymmetric MnTe with vanishing net magnetization. Our observation of the altermagnetic lifting of the Kramers spin degeneracy can have broad consequences in magnetism. It motivates exploration and exploitation of the unconventional nature of this magnetic phase in an extended family of materials, ranging from insulators and semiconductors to metals and superconductors, that have been either identified recently or perceived for many decades as conventional antiferromagnets.
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Submitted 21 August, 2023;
originally announced August 2023.
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Anomalous Nernst effect in Mn$_3$NiN thin films
Authors:
Sebastian Beckert,
João Godinho,
Freya Johnson,
Jozef Kimák,
Eva Schmoranzerová,
Jan Zemen,
Zbyněk Šobáň,
Kamil Olejník,
Jakub Železný,
Joerg Wunderlich,
Petr Němec,
Dominik Kriegner,
Andy Thomas,
Sebastian T. B. Goennenwein,
Lesley F Cohen,
Helena Reichlová
Abstract:
The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect…
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The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect and its magnitude in this class of materials are, however, very limited. This scarcity may be partly due to the experimental difficulty of reliably quantifying the anomalous Nernst coefficient. Here, we report experiments on the anomalous Nernst effect in antiferromagnetic antiperovskite Mn$_3$NiN thin films. Measurement of both the anomalous Hall and Nernst effects using the same sample and measurement geometry makes it possible to directly compare these two effects and quantify the anomalous Nernst coefficient and conductivity in Mn$_3$NiN. We carefully evaluate the spatial distribution of the thermal gradient in the sample and use finite element modeling to corroborate our experimental results.
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Submitted 5 December, 2022;
originally announced December 2022.
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Synthesis and physical properties of uranium thin-film hydrides UH2 and \b{eta}-UH3
Authors:
Evgenia A. Tereshina-Chitrova,
Ladislav Havela,
Mykhaylo Paukov,
Oleksandra Koloskova,
Lukas Horak,
Milan Dopita,
Mayerling Martinez Celis,
Miroslav Cieslar,
Zbynek Soban,
Thomas Gouder,
Frank Huber
Abstract:
Formation of thin uranium hydrides films, UH2 and \b{eta}-UH3, synthesized by a reactive dc sputtering of uranium metal, was explored using variable deposition conditions. Obtained stable oxygen-free hydride films were studied by a variety of methods, both in situ (photoelectron spectroscopy - XPS), and ex-situ (x-ray diffraction - XRD, transmission electron microscopy - TEM), electrical resistivi…
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Formation of thin uranium hydrides films, UH2 and \b{eta}-UH3, synthesized by a reactive dc sputtering of uranium metal, was explored using variable deposition conditions. Obtained stable oxygen-free hydride films were studied by a variety of methods, both in situ (photoelectron spectroscopy - XPS), and ex-situ (x-ray diffraction - XRD, transmission electron microscopy - TEM), electrical resistivity, and magnetometry). Both types of hydrides are ferromagnetic, the Curie temperatures of UH2 and \b{eta}-UH3 are approx. 120 and 170 K, respectively. Ferromagnetism in the thin films is robust and does not depend on structure details while electrical resistivity data reflect disorder in both types of hydrides.
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Submitted 11 November, 2022;
originally announced November 2022.
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Ultrashort spin-orbit torque generated by femtosecond laser pulses
Authors:
T. Janda,
T. Ostatnicky,
P. Nemec,
E. Schmoranzerova,
R. Campion,
V. Hills,
V. Novak,
Z. Soban,
J. Wunderlich
Abstract:
To realize the very objective of spintronics, namely the development of ultra-high frequency and energy-efficient electronic devices, an ultrafast and scalable approach to switch magnetic bits is required. Magnetization switching with spin currents generated by the spin-orbit interaction at ferromagnetic/non-magnetic interfaces is one of such scalable approaches, where the ultimate switching speed…
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To realize the very objective of spintronics, namely the development of ultra-high frequency and energy-efficient electronic devices, an ultrafast and scalable approach to switch magnetic bits is required. Magnetization switching with spin currents generated by the spin-orbit interaction at ferromagnetic/non-magnetic interfaces is one of such scalable approaches, where the ultimate switching speed is limited by the Larmor precession frequency. Understanding the magnetization precession dynamics induced by spin-orbit torques (SOTs) is therefore of great importance. Here we demonstrate generation of ultrashort SOT pulses that excite Larmor precession at an epitaxial Fe/GaAs interface by converting femtosecond laser pulses into high-amplitude current pulses in an electrically biased p-i-n photodiode. We control the polarity, amplitude, and duration of the current pulses and, most importantly, also their propagation direction with respect to the crystal orientation. The SOT origin of the excited Larmor precession was revealed by a detailed analysis of the precession phase and amplitude at different experimental conditions.
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Submitted 25 August, 2022;
originally announced August 2022.
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Identifying the octupole Antiferromagnetic domain orientation in Mn$_{3}$NiN by scanning Anomalous Nernst Effect microscopy
Authors:
F. Johnson,
J. Kimák,
J. Zemen,
Z. Šobáň,
E. Schmoranzerová,
J. Godinho,
P. Němec,
S. Beckert,
H. Reichlová,
D. Boldrin,
J. Wunderlich,
L. F. Cohen
Abstract:
The intrinsic anomalous Nernst effect in a magnetic material is governed by the Berry curvature at the Fermi energy and can be realized in non-collinear antiferromagnets with vanishing magnetization. Thin films of (001)-oriented Mn$_{3}$NiN have their chiral antiferromagnetic structure located in the (111) plane facilitating the anomalous Nernst effect unusually in two orthogonal in-plane directio…
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The intrinsic anomalous Nernst effect in a magnetic material is governed by the Berry curvature at the Fermi energy and can be realized in non-collinear antiferromagnets with vanishing magnetization. Thin films of (001)-oriented Mn$_{3}$NiN have their chiral antiferromagnetic structure located in the (111) plane facilitating the anomalous Nernst effect unusually in two orthogonal in-plane directions. The sign of each component of the anomalous Nernst effect is determined by the local antiferromagnetic domain state. In this work, a temperature gradient is induced in a 50 nm thick Mn$_{3}$NiN two micron-size Hall cross by a focused scanning laser beam, and the spatial distribution of the anomalous Nernst voltage is used to image and identify the octupole macrodomain arrangement. Although the focused laser beam width may span many individual domains, cooling from room temperature through the antiferromagnetic transition temperature in an in-plane magnetic field prepares the domain state producing a checkerboard pattern resulting from the convolution of contributions from each domain. These images together with atomistic and micromagnetic simulations suggest an average macrodomain of the order of $1 μm^{2}$.
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Submitted 24 May, 2022;
originally announced May 2022.
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Symmetry effects on the static and dynamic properties of coupled magnetic oscillators
Authors:
J P. Patchett,
M. Drouhin,
J. W. Liao,
Z. Soban,
D. Petit,
J. Haigh,
P. Roy,
J. Wunderlich,
R. P. Cowburn,
C. Ciccarelli
Abstract:
The effect of symmetry on the resonance spectra of antiferromagnetically coupled oscillators has attracted new interest with the discovery of symmetry-breaking induced anti-crossings. Here, we experimentally characterise the resonance spectrum of a synthetic antiferromagnet Pt/CoFeB/Ru/CoFeB/Pt, where we are able to independently tune the effective magnetisation of the two coupled magnets. To mode…
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The effect of symmetry on the resonance spectra of antiferromagnetically coupled oscillators has attracted new interest with the discovery of symmetry-breaking induced anti-crossings. Here, we experimentally characterise the resonance spectrum of a synthetic antiferromagnet Pt/CoFeB/Ru/CoFeB/Pt, where we are able to independently tune the effective magnetisation of the two coupled magnets. To model our results we apply the mathematical methods of group theory to the solutions of the Landau Lifshitz Gilbert equation. This general approach, usually applied to quantum mechanical systems, allows us to identify the main features of the resonance spectrum in terms of symmetry breaking and to make a direct comparison with crystal antiferromagnets.
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Submitted 17 March, 2022;
originally announced April 2022.
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Spontaneous anomalous Hall effect arising from an unconventional compensated magnetic phase in a semiconductor
Authors:
R. D. Gonzalez Betancourt,
J. Zubáč,
R. J. Gonzalez-Hernandez,
K. Geishendorf,
Z. Šobáň,
G. Springholz,
K. Olejník,
L. Šmejkal,
J. Sinova,
T. Jungwirth,
S. T. B. Goennenwein,
A. Thomas,
H. Reichlová,
J. Železný,
D. Kriegner
Abstract:
The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a colli…
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The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a collinear antiparallel magnetic ordering of Mn moments and a vanishing net magnetization. The anomalous Hall effect arises from an unconventional phase with strong time-reversal symmetry breaking and alternating spin polarization in real-space crystal structure and momentum-space electronic structure. The anisotropic crystal environment of magnetic Mn atoms due to the non-magnetic Te atoms is essential for establishing the unconventional phase and generating the anomalous Hall effect.
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Submitted 23 January, 2023; v1 submitted 13 December, 2021;
originally announced December 2021.
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Thermally induced all-optical ferromagnetic resonance in thin YIG films
Authors:
E. Schmoranzerová,
J. Kimák,
R. Schlitz,
S. T. B. Goennenwein,
D. Kriegner,
H. Reichlová,
Z. Šobáň,
G. Jakob,
E. -J. Guo,
M. Kläui,
M. Münzenberg,
P. Němec,
T. Ostatnický
Abstract:
All-optical ferromagnetic resonance (AO-FMR) is a powerful tool for local detection of micromagnetic parameters, such as magnetic anisotropy, Gilbert dam** or spin stiffness. In this work we demonstrate that the AO-FMR method can be used in thin films of Yttrium Iron Garnet (YIG) if a metallic cap** layer (Au, Pt) is deposited on top of the film. Magnetization precession is triggered by heatin…
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All-optical ferromagnetic resonance (AO-FMR) is a powerful tool for local detection of micromagnetic parameters, such as magnetic anisotropy, Gilbert dam** or spin stiffness. In this work we demonstrate that the AO-FMR method can be used in thin films of Yttrium Iron Garnet (YIG) if a metallic cap** layer (Au, Pt) is deposited on top of the film. Magnetization precession is triggered by heating of the metallic layer with femtosecond laser pulses. The heating modifies the magneto-crystalline anisotropy of the YIG film and shifts the quasi-equilibrium orientation of magnetization, which results in precessional magnetization dynamics. The laser-induced magnetization precession corresponds to a uniform (Kittel) magnon mode, with the precession frequency determined by the magnetic anisotropy of the material as well as the external magnetic field, and the dam** time set by a Gilbert dam** parameter. The AO-FMR method thus enables measuring local magnetic properties, with spatial resolution given only by the laser spot size.
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Submitted 31 October, 2021;
originally announced November 2021.
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Giant quadratic magneto-optical response of thin YIG films for sensitive magnetometric experiments
Authors:
E. Schmoranzerová,
T. Ostatnický,
J. Kimák,
D. Kriegner,
H. Reichlová,
R. Schlitz,
A. Baďura,
Z. Šobáň,
M. Münzenberg,
G. Jakob,
E. -J. Guo,
M. Kläui,
P. Němec
Abstract:
We report on observation of a magneto-optical effect quadratic in magnetization (Cotton-Mouton effect) in 50 nm thick layer of Yttrium-Iron Garnet (YIG). By a combined theoretical and experimental approach, we managed to quantify both linear and quadratic magneto-optical effects. We show that the quadratic magneto-optical signal in the thin YIG film can exceed the linear magneto-optical response,…
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We report on observation of a magneto-optical effect quadratic in magnetization (Cotton-Mouton effect) in 50 nm thick layer of Yttrium-Iron Garnet (YIG). By a combined theoretical and experimental approach, we managed to quantify both linear and quadratic magneto-optical effects. We show that the quadratic magneto-optical signal in the thin YIG film can exceed the linear magneto-optical response, reaching values of 450 urad that are comparable with Heusler alloys or ferromagnetic semiconductors. Furthermore, we demonstrate that a proper choice of experimental conditions, particularly with respect to the wavelength, is crucial for optimization of the quadratic magneto-optical effect for magnetometry measurement.
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Submitted 26 October, 2021;
originally announced October 2021.
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Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs
Authors:
Tomas Janda,
Joao Godinho,
Tomas Ostatnicky,
Emanuel Pfitzner,
Georg Ulrich,
Arne Hoehl,
Sonka Reimers,
Zbynek Soban,
Thomas Metzger,
Helena Reichlova,
Vít Novák,
Richard Campion,
Joachim Heberle,
Peter Wadley,
Kevin Edmonds,
Ollie Amin,
Jas Chauhan,
Sarnjeet Dhesi,
Francesco Maccherozzi,
Ruben Otxoa,
Pierre Roy,
Kamil Olejnik,
Petr Němec,
Tomas Jungwirth,
Bernd Kaestner
, et al. (1 additional authors not shown)
Abstract:
Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferroma…
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Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferromagnets has been a major challenge. Here we demonstrate in a collinear antiferromagnet a thermoelectric detection method by combining the magneto-Seebeck effect with local heat gradients generated by scanning far-field or near-field techniques. In a 20 nm epilayer of uniaxial CuMnAs we observe reversible 180 deg switching of the Néel vector via domain wall displacement, controlled by the polarity of the current pulses. We also image polarity-dependent 90 deg switching of the Néel vector in a thicker biaxial film, and domain shattering induced at higher pulse amplitudes. The antiferromagnetic domain maps obtained by our laboratory technique are compared to measurements by the established synchrotron microscopy using X-ray magnetic linear dichroism.
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Submitted 11 April, 2020;
originally announced April 2020.
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Imaging and writing magnetic domains in the non-collinear antiferromagnet Mn$_{\text{3}}$Sn
Authors:
Helena Reichlova,
Tomas Janda,
Joao Godinho,
Anastasios Markou,
Dominik Kriegner,
Richard Schlitz,
Jakub Zelezny,
Zbynek Soban,
Mauricio Bejarano,
Helmut Schultheiss,
Petr Nemec,
Tomas Jungwirth,
Claudia Felser,
Joerg Wunderlich,
Sebastian T. B. Goennenwein
Abstract:
Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a corresponding counterpart in materials with non-collinear spin structure. In addition, new phenomena such as the magnetic spin Hall effect were experimentally obse…
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Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a corresponding counterpart in materials with non-collinear spin structure. In addition, new phenomena such as the magnetic spin Hall effect were experimentally observed in non-collinear AFMs, and the presence of the equivalent to the ferromagnetic spin transfer torque via spin polarized currents was theoretically predicted. In spite of these developments, an interpretation of the rich physical phenomena observed in non-collinear antiferromagnets is challenging, since the microscopic spin arrangement, the magnetic domain distribution, and the domain orientations have proven notoriously difficult to access experimentally. This is all the more problematic, as imaging and writing magnetic domains is of central importance for applications. Successful imaging is a basic requirement to experimentally confirm the spin transfer torque acting on non-collinear domain walls and therefore of eminent interest. Here, we demonstrate that the local magnetic structure of the non-collinear AFM Mn3Sn films can be imaged by scanning thermal gradient microscopy (STGM). The technique is based on scanning a laser spot over the sample's surface, and recording the ensuing thermo-voltage. We image the magnetic structure at a series of different temperatures and show that at room temperature, the domain structure is not affected by the application of moderate magnetic fields. In addition to imaging, we establish a scheme for heat-assisted magnetic recording, using local laser heating in combination with magnetic fields to intentionally write domain patterns into the antiferromagnet.
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Submitted 31 May, 2019;
originally announced May 2019.
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Electrically induced and detected Néel vector reversal in a collinear antiferromagnet
Authors:
J. Godinho,
H. Reichlova,
D. Kriegner,
V. Novak,
K. Olejnik,
Z. Kaspar,
Z. Soban,
P Wadley,
R. P. Campion,
R. M. Otxoa,
P. E. Roy,
J. Zelezny,
T. Jungwirth,
J. Wunderlich
Abstract:
Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed f…
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Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed for spin reversal detection in non-collinear antiferromagnets, is limited to materials that crystalize in ferromagnetic symmetry groups. Here we demonstrate electrical detection of the 180 deg Néel vector reversal in CuMnAs which comprises two collinear spin sublattices and belongs to an antiferromagnetic symmetry group with no net magnetic moment. We detect the spin reversal by measuring a second-order magnetotransport coefficient whose presence is allowed in systems with broken space inversion symmetry. The phenomenology of the non-linear transport effect we observe in CuMnAs is consistent with a microscopic scenario combining anisotropic magneto-resistance (AMR) with a transient tilt of the Néel vector due to a current-induced, staggered spin-orbit field. We use the same staggered spin-orbit field, but of a higher amplitude, for the electrical switching between reversed antiferromagnetic states which are stable and show no sign of decay over 25 hour probing times.
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Submitted 7 June, 2018;
originally announced June 2018.
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Nano scale thermo-electrical detection of magnetic domain wall propagation
Authors:
Patryk Krzysteczko,
James Wells,
Alexander Fernandez Scarioni,
Zbynek Soban,
Tomas Janda,
Xiukun Hu,
Vit Saidl,
Richard P. Campion,
Rhodri Mansell,
Ji-Hyun Lee,
Russell P. Cowburn,
Petr Nemec,
Olga Kazakova,
Joerg Wunderlich,
Hans Werner Schumacher
Abstract:
In magnetic nanowires with perpendicular magnetic anisotropy (PMA) magnetic domain walls (DW) are narrow and can move rapidly driven by current induced torques. This enables important applications like high-density memories for which the precise detection of the position and motion of a propagating DW is of utmost interest. Today's DW detection tools are often limited in resolution, or acquisition…
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In magnetic nanowires with perpendicular magnetic anisotropy (PMA) magnetic domain walls (DW) are narrow and can move rapidly driven by current induced torques. This enables important applications like high-density memories for which the precise detection of the position and motion of a propagating DW is of utmost interest. Today's DW detection tools are often limited in resolution, or acquisition speed, or can only be applied on specific materials. Here, we show that the anomalous Nernst effect provides a simple and powerful tool to precisely track the position and motion of a single DW propagating in a PMA nanowire. We detect field and current driven DW propagation in both metallic heterostructures and dilute magnetic semiconductors over a broad temperature range. The demonstrated spatial resolution below 20 nm is comparable to the DW width in typical metallic PMA systems.
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Submitted 23 November, 2016;
originally announced November 2016.
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Inertial displacement of a domain wall excited by ultra-short circularly polarized laser pulses
Authors:
T. Janda,
P. E. Roy,
R. M. Otxoa,
Z. Soban,
A. Ramsay,
A. C. Irvine,
F. Trojanek,
R. P. Campion,
B. L. Gallagher,
P. Nemec,
T. Jungwirth,
J. Wunderlich
Abstract:
Domain wall motion driven by ultra-short laser pulses is a prerequisite for envisaged low-power spintronics combining storage of information in magneto electronic devices with high speed and long distance transmission of information encoded in circularly polarized light. Here we demonstrate the conversion of the circular polarization of incident femtosecond laser pulses into inertial displacement…
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Domain wall motion driven by ultra-short laser pulses is a prerequisite for envisaged low-power spintronics combining storage of information in magneto electronic devices with high speed and long distance transmission of information encoded in circularly polarized light. Here we demonstrate the conversion of the circular polarization of incident femtosecond laser pulses into inertial displacement of a domain wall in a ferromagnetic semiconductor. In our study we combine electrical measurements and magneto-optical imaging of the domain wall displacement with micromagnetic simulations. The optical spin transfer torque acts over a picosecond recombination time of the spin polarized photo-carriers which only leads to a deformation of the internal domain wall structure. We show that subsequent depinning and micro-meter distance displacement without an applied magnetic field or any other external stimuli can only occur due to the inertia of the domain wall.
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Submitted 16 June, 2016;
originally announced June 2016.
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Diffusion of Mn interstitials in (Ga,Mn)As epitaxial layers
Authors:
L. Horák,
J. Matějová,
X. Martí,
V. Holý,
V. Novák,
Z. Šobáň,
S. Mangold,
F. Jiménez-Villacorta
Abstract:
Magnetic properties of thin (Ga,Mn)As layers improve during annealing by out-diffusion of interstitial Mn ions to a free surface. Out-diffused Mn atoms participate in the growth of a Mn-rich surface layer and a saturation of this layer causes an inhibition of the out-diffusion. We combine high-resolution x-ray diffraction with x-ray absorption spectroscopy and a numerical solution of the diffusion…
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Magnetic properties of thin (Ga,Mn)As layers improve during annealing by out-diffusion of interstitial Mn ions to a free surface. Out-diffused Mn atoms participate in the growth of a Mn-rich surface layer and a saturation of this layer causes an inhibition of the out-diffusion. We combine high-resolution x-ray diffraction with x-ray absorption spectroscopy and a numerical solution of the diffusion problem for the study of the out-diffusion of Mn interstitials during a sequence of annealing steps. Our data demonstrate that the out-diffusion of the interstitials is substantially affected by the internal electric field caused by an inhomogeneous distribution of charges in the (Ga,Mn)As layer.
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Submitted 4 May, 2011;
originally announced May 2011.
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Molecular Beam Epitaxy of LiMnAs
Authors:
V. Novak,
M. Cukr,
Z. Soban,
T. Jungwirth,
X. Marti,
V. Holy,
P. Horodyska,
P. Nemec
Abstract:
We report on the molecular beam epitaxy (MBE) growth of high crystalline quality LiMnAs. The introduction of a group-I alkali metal element Li with flux comparable to fluxes of Mn and As has not caused any apparent damage to the MBE system after as many as fifteen growth cycles performed on the system to date.
We report on the molecular beam epitaxy (MBE) growth of high crystalline quality LiMnAs. The introduction of a group-I alkali metal element Li with flux comparable to fluxes of Mn and As has not caused any apparent damage to the MBE system after as many as fifteen growth cycles performed on the system to date.
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Submitted 3 September, 2010;
originally announced September 2010.
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Systematic study of Mn-do** trends in optical properties of (Ga,Mn)As
Authors:
T. Jungwirth,
P. Horodyska,
N. Tesarova,
P. Nemec,
J. Subrt,
P. Maly,
P. Kuzel,
C. Kadlec,
J. Masek,
I. Nemec,
V. Novak,
K. Olejnik,
Z. Soban,
P. Vasek,
P. Svoboda,
Jairo Sinova
Abstract:
We report on a systematic study of optical properties of (Ga,Mn)As epilayers spanning the wide range of accessible substitutional Mn_Ga do**s. The growth and post-growth annealing procedures were optimized for each nominal Mn do** in order to obtain films which are as close as possible to uniform uncompensated (Ga,Mn)As mixed crystals. We observe a broad maximum in the mid-infrared absorption…
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We report on a systematic study of optical properties of (Ga,Mn)As epilayers spanning the wide range of accessible substitutional Mn_Ga do**s. The growth and post-growth annealing procedures were optimized for each nominal Mn do** in order to obtain films which are as close as possible to uniform uncompensated (Ga,Mn)As mixed crystals. We observe a broad maximum in the mid-infrared absorption spectra whose position exhibits a prevailing blue-shift for increasing Mn-do**. In the visible range, a peak in the magnetic circular dichroism blue shifts with increasing Mn-do**. These observed trends confirm that disorder-broadened valence band states provide a better one-particle representation for the electronic structure of high-doped (Ga,Mn)As with metallic conduction than an energy spectrum assuming the Fermi level pinned in a narrow impurity band.
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Submitted 27 July, 2010;
originally announced July 2010.
