Silicon Carbide Timepix3 detector for quantum-imaging detection and spectral tracking of charged particles in wide range of energy and field-of-view
Authors:
Andrej Novak,
Carlos Granja,
Andrea Sagatova,
Jan Jakubek,
Bohumir Zatko,
Vladimir Vondracek,
Michal Andrlik,
Vaclav Zach,
Stepan Polansky,
Anuj Rathi,
Cristina Oancea
Abstract:
The hybrid architecture of the Timepix (TPX) family of detectors enables the use of different semiconductor sensors, most commonly silicon (Si), as well as high-density materials such as Cadmium Telluride (CdTe) or Gallium Arsenide (GaAs). For this purpose, we explore the potential of a silicon carbide (SiC) sensor bump-bonded on a Timepix3 detector as a radiation imaging and particle tracking det…
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The hybrid architecture of the Timepix (TPX) family of detectors enables the use of different semiconductor sensors, most commonly silicon (Si), as well as high-density materials such as Cadmium Telluride (CdTe) or Gallium Arsenide (GaAs). For this purpose, we explore the potential of a silicon carbide (SiC) sensor bump-bonded on a Timepix3 detector as a radiation imaging and particle tracking detector. SiC stands as a radiation-hard material also with the ability to operate at elevated temperatures up to several hundreds of degrees Celsius. As a result, this sensor material is more suitable for radiation harsh environments compared to conventional e.g., Si sensors. In this work, we evaluate the response for precise radiation spectrometry and high-resolution particle tracking of newly developed SiC Timepix3 detector which is built and operated as a compact radiation camera MiniPIX-Timepix3 with integrated readout electronics. Calibration measurements were conducted with mono-energetic proton beams with energies of 13, 22, and 31 MeV at the U-120M cyclotron at the Nuclear Physics Institute Czech Academy of Science (NPI CAS), Prague, as well as 100 and 226 MeV at the Proton Therapy Center Czech (PTC) in Prague. High-resolution pattern recognition analysis and single-particle spectral tracking are used for detailed inspection and understanding of the sensor response. Results include distributions of deposited energy and linear energy transfer (LET) spectra. The spatial uniformity of the pixelated detector response is examined in terms of homogeneously distributed deposited energy.
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Submitted 26 October, 2023;
originally announced October 2023.
Radiation Hardness Study of the ePix100 Sensor and ASIC under Direct Illumination at the European XFEL
Authors:
I. Klačková,
K. Ahmed,
G. Blaj,
M. Cascella,
V. Cerantola,
C. Chang,
A. Dragone,
S. Göde,
S. Hauf,
C. Kenney,
J. Segal,
M. Kuster,
A. Šagátová
Abstract:
The ePix detector family provides multiple variants of hybrid pixel detectors to support a wide range of applications at free electron laser facilities. We present the results of a systematic study of the influence of radiation induced damage on the performance and lifetime of an ePix100a detector module using a direct attenuated beam of the EuXFEL at 9 keV photon energy and an average power of 10…
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The ePix detector family provides multiple variants of hybrid pixel detectors to support a wide range of applications at free electron laser facilities. We present the results of a systematic study of the influence of radiation induced damage on the performance and lifetime of an ePix100a detector module using a direct attenuated beam of the EuXFEL at 9 keV photon energy and an average power of 10 $μ$W. An area of 20 x 20 pixels was irradiated with an average photon flux of approx. 7 x $10^{9}$ photons/s to a dose of approximately 760$\pm$65 kGy at the location of the Si/SiO$_2$ interfaces in the sensor. A dose dependent increase in both offset and noise of the ePix100a detector have been observed originating from an increase of the sensor leakage current. Moreover, we observed an effect directly after irradiation resulting in the saturation of individual pixels by their dark current. Changes in gain are evaluated one and half hours post irradiation and suggest damage to occur also on the ASIC level. Based on the obtained results, thresholds for beam parameters are deduced and the detector lifetime is estimated with respect to the requirements to the data quality in order to satisfy the scientific standards defined by the experiments. We conclude the detector can withstand a beam with an energy up to 1 $μ$J at a photon energy of 9 keV impacting on an area of 1 mm$^2$. The detector can be used without significant degradation of its performance for several years if the incident photon beam intensities do not exceed the detector's dynamic range by at least three orders of magnitude. Our results provide valuable input for the operation of the ePix100a detector at FEL facilities and for the design of future detector technology.
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Submitted 17 August, 2021;
originally announced August 2021.
