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Magnetic interactions in IV-VI diluted magnetic semiconductors
Authors:
M. Górska,
Ł. Kilański,
A. Łusakowski
Abstract:
Diluted magnetic semiconductors (DMS) are interesting because of the interplay between the electronic and magnetic subsystems. We describe selected magnetic properties of IV-VI diluted magnetic semiconductors, looking at the similarities and differences between magnetic properties of II-VI, IV-VI, and III-V DMS. We focus on the influence of the crystalline and electronic structure of the material…
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Diluted magnetic semiconductors (DMS) are interesting because of the interplay between the electronic and magnetic subsystems. We describe selected magnetic properties of IV-VI diluted magnetic semiconductors, looking at the similarities and differences between magnetic properties of II-VI, IV-VI, and III-V DMS. We focus on the influence of the crystalline and electronic structure of the material on its magnetic properties, especially on the exchange interactions among magnetic ions. We describe methods of determination of the exchange parameters by using different experimental techniques, such as measurements of magnetic susceptibility, magnetization, and specific heat. We follow the development in the material technology from bulk crystals to thin films and nanostructures.
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Submitted 3 August, 2023;
originally announced August 2023.
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Reconstruction, rumpling, and Dirac states at the (001) surface of a topological crystalline insulator Pb1-xSnxSe
Authors:
A. Łusakowski,
P. Bogusławski,
T. Story
Abstract:
Equilibrium atomic configuration and electronic structure of the (001) surface of IV-VI semiconductors PbTe, PbSe, SnTe and SnSe, is studied using the density functional theory (DFT) methods. At surfaces of all those compounds, the displacements of ions from their perfect lattice sites reveal two features characteristic of the rock salt crystals. First, the ionic displacements occur only along the…
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Equilibrium atomic configuration and electronic structure of the (001) surface of IV-VI semiconductors PbTe, PbSe, SnTe and SnSe, is studied using the density functional theory (DFT) methods. At surfaces of all those compounds, the displacements of ions from their perfect lattice sites reveal two features characteristic of the rock salt crystals. First, the ionic displacements occur only along the direction perpendicular to the surface, and they exhibit the rumpling effect, i.e., the vertical shifts of cations and anions differ. Second, the interlayer spacing of the first few monolayers at the surface oscillates. Our results are in good agreement with the previous X-ray experimental data and theoretical results where available. They also are consistent with the presence of two {110} mirror planes at the (001) surface of the rock salt. One the other hand, experiments preformed for the topological Pb$_{1-x}$Sn$_x$ Se alloy indicate breaking of the mirror symmetry due to a large 0.3 Å relative displacement of the cation and anion sublattices at the surface, which induces the opening of the gap of the Dirac cones. Our results for Pb$_{1-x}$Sn$_x$Se including the simulated STM images, are in contradiction with these findings, since surface reconstructions with broken symmetry are never the ground state configurations. The impact of the theoretically determined surface configurations and of the chemical disorder on the surface states is analyzed.
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Submitted 1 August, 2023; v1 submitted 6 June, 2023;
originally announced June 2023.
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Electronic properties of TaAs2 topological semimetal investigated by transport and ARPES
Authors:
A. S. Wadge,
G. Grabecki,
C. Autieri,
B. J. Kowalski,
P. Iwanowski,
G. Cuono,
M. F. Islam,
C. M. Canali,
K. Dybko,
A. Hruban,
A. Łusakowski,
T. Wojciechowski,
R. Diduszko,
A. Lynnyk,
N. Olszowska,
M. Rosmus,
J. Kołodziej,
A. Wiśniewski
Abstract:
We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the ($\overline{2}$ 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between the magnetic field and the [$\overline{2}$…
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We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the ($\overline{2}$ 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between the magnetic field and the [$\overline{2}$ 0 1] direction. The results indicate the elliptical shape of the Fermi surface cross-sections. Additionally, a mobility spectrum analysis was carried out, which also reveals at least four types of carriers contributing to the conductance (two kinds of electrons and two kinds of holes). ARPES spectra were taken on freshly cleaved ($\overline{2}$ 0 1) surface and it was found that bulk states pockets at the constant energy surface are elliptical, which confirms the magnetotransport angle dependent studies. First-principles calculations support the interpretation of the experimental results. The theoretical calculations better reproduce the ARPES data if the theoretical Fermi level is increased, which is due to a small n-do** of the samples. This shifts the Fermi level closer to the Dirac point, allowing to investigate the physics of the Dirac and Weyl points, making this compound a platform for the investigation of the Dirac and Weyl points in three-dimensional materials.
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Submitted 10 January, 2022; v1 submitted 9 August, 2021;
originally announced August 2021.
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Band structure and topological phases of Pb$_{1-x-y}$Sn$_x$Mn$_y$Te by ab initio calculations
Authors:
A. Łusakowski,
P. Bogusławski,
T. Story
Abstract:
The change in the composition of Pb$_{1-x}$Sn$_x$Te IV-VI semiconductor or in its lattice parameter can drive a transition from the topologically trivial to the topological crystalline insulator (TCI), crossing a region where the alloy is in the Weyl semimetal phase. Incorporation of the magnetic Mn ions induces strong perturbations of the electronic structure, which act on both orbital and spin v…
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The change in the composition of Pb$_{1-x}$Sn$_x$Te IV-VI semiconductor or in its lattice parameter can drive a transition from the topologically trivial to the topological crystalline insulator (TCI), crossing a region where the alloy is in the Weyl semimetal phase. Incorporation of the magnetic Mn ions induces strong perturbations of the electronic structure, which act on both orbital and spin variables. Our first principles calculations show that the presence of Mn shifts the TCI and the Weyl region towards higher Sn contents in Pb$_{1-x}$Sn$_x$Te. When the Mn spin polarization is finite, the spin perturbation, like the orbital part, induces changes in band energies comparable to the band gap, which widens the Weyl area. The effect opens a possibility of driving transitions between various topological phases of the system by magnetic field or by the spontaneous Mn magnetization. We also propose a new method to calculate topological indices for systems with a finite spin polarization defined based on the concept of the Chern number. These valid topological characteristics enable an identification of the three distinct topological phases of the Pb$_{1-x-y}$Sn$_x$Mn$_y$Te alloy.
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Submitted 2 October, 2020;
originally announced October 2020.
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Conductance spectra of (Nb, Pb, In)/NbP -- superconductor/Weyl semimetal junctions
Authors:
G. Grabecki,
A. Dąbrowski,
P. Iwanowski,
A. Hruban,
B. J. Kowalski,
N. Olszowska,
J. Kołodziej,
M. Chojnacki,
K. Dybko,
A. Łusakowski,
T. Wojtowicz,
T. Wojciechowski,
R. Jakieła,
A. Wiśniewski
Abstract:
The possibility of inducing superconductivity in type-I Weyl semimetal through coupling its surface to a superconductor was investigated. A single crystal of NbP, grown by chemical vapor transport method, was carefully characterized by XRD, EDX, SEM, ARPES techniques and by electron transport measurements. The mobility spectrum of the carriers was determined. For the studies of interface transmiss…
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The possibility of inducing superconductivity in type-I Weyl semimetal through coupling its surface to a superconductor was investigated. A single crystal of NbP, grown by chemical vapor transport method, was carefully characterized by XRD, EDX, SEM, ARPES techniques and by electron transport measurements. The mobility spectrum of the carriers was determined. For the studies of interface transmission, the (001) surface of the crystal was covered by several hundred nm thick metallic layers of either Pb, or Nb, or In. DC current-voltage characteristics and AC differential conductance through the interfaces as a function of the DC bias were investigated. When the metals become superconducting, all three types of junctions show conductance increase, pointing out the Andreev reflection as a prevalent contribution to the subgap conductance. In the case of Pb-NbP and Nb-NbP junctions, the effect is satisfactorily described by modified Blonder-Tinkham-Klapwijk model. The absolute value of the conductance is much smaller than that for the bulk crystal, indicating that the transmission occurs through only a small part of the contact area. An opposite situation occurs in In-NbP junction, where the conductance at the peak reaches the bulk value indicating that almost whole contact area is transmitting and, additionally, a superconducting proximity phase is formed in the material. We interpret this as a result of indium diffusion into NbP, where the metal atoms penetrate the surface barrier and form very transparent superconductor-Weyl semimetal contact inside. However, further diffusion occurring already at room temperature leads to degradation of the effect, so it is observed only in the pristine structures. Despite of this, our observation directly demonstrates possibility of inducing superconductivity in a type-I Weyl semimetal.
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Submitted 20 January, 2020; v1 submitted 20 August, 2019;
originally announced August 2019.
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Alloy broadening of the transition to the non-trivial topological phase of Pb_{1-x}Sn_{x}Te
Authors:
A. Lusakowski,
P. Boguslawski,
T. Story
Abstract:
Transition between the topologically trivial and non-trivial phase of Pb_{1-x}Sn_{x}Te alloy is driven by the increasing content $x$ of Sn, or by the hydrostatic pressure for $x<0.3$. We show that a sharp border between these two topologies exists in the Virtual Crystal Approximation only. In more realistic models, the Special Quasirandom Structure method and the supercell method (with averaging o…
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Transition between the topologically trivial and non-trivial phase of Pb_{1-x}Sn_{x}Te alloy is driven by the increasing content $x$ of Sn, or by the hydrostatic pressure for $x<0.3$. We show that a sharp border between these two topologies exists in the Virtual Crystal Approximation only. In more realistic models, the Special Quasirandom Structure method and the supercell method (with averaging over various atomic configurations), the transitions are broadened. We find a surprisingly large interval of alloy composition, $0.3<x<0.6$, in which the energy gap is practically vanishing. A similar strong broadening is also obtained for transitions driven by hydrostatic pressure. Analysis of the band structure shows that the alloy broadening originates in splittings of the energy bands caused by the different chemical nature of Pb and Sn, and by the decreased crystal symmetry due to spatial disorder. Based on our results of ab initio and tight binding calculations for Pb_{1-x}Sn_{x}Te we discuss different criteria of discrimination between trivial and nontrivial topology of the band structure of alloys.
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Submitted 17 July, 2018;
originally announced July 2018.
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Magnetic anisotropy induced by crystal distortion in Ge1-xMn xTe/PbTe//KCl (001) ferromagnetic semiconductor layers
Authors:
W. Knoff,
A. Łusakowski,
J. Z. Domagała,
R. Minikayev,
B. Taliashvili,
E. Łusakowska,
A. Pieniążek,
A. Szczerbakow,
T. Story
Abstract:
Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge1-xMn xTe with x=0.14 grown by molecular beam epitaxy (MBE) on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is contr…
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Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge1-xMn xTe with x=0.14 grown by molecular beam epitaxy (MBE) on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge1-xMnxTe layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch.
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Submitted 22 July, 2015;
originally announced July 2015.
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Magnetic anisotropy energy in disordered Ge_{1-x}Mn_{x}Te
Authors:
A. Łusakowski,
P. Bogusławski,
T. Story
Abstract:
We theoretically analyze the influence of chemical disorder on magnetic anisotropy in Ge_{1-x}Mn_{x}Te semiconductor layers known to exhibit carrier-induced ferromagnetism and ferroelectric distortion of rhombohedral crystal lattice. Using DFT method we determine the local changes in the crystal structure due to Mn ions substitution for Ge and due to the presence in Ge_{1-x}Mn_{x}Te of very high c…
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We theoretically analyze the influence of chemical disorder on magnetic anisotropy in Ge_{1-x}Mn_{x}Te semiconductor layers known to exhibit carrier-induced ferromagnetism and ferroelectric distortion of rhombohedral crystal lattice. Using DFT method we determine the local changes in the crystal structure due to Mn ions substitution for Ge and due to the presence in Ge_{1-x}Mn_{x}Te of very high concentration of cation vacancies. We calculate the effect of this structural and chemical disorder on single ion magnetic anisotropy mechanism and show that its contribution is order of magnitude smaller as compared to magnetic anisotropy mechanism originating from the spin polarization induced by Mn ions into neighboring Te and Ge ions. We also discuss magnetic anisotropy effects due to pairs of Mn ions differently allocated in the lattice. The spatial averaging over chemical disorder strongly reduces the strength of this magnetic anisotropy mechanism and restores the global rhombohedral symmetry of magnetic system.
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Submitted 2 July, 2015;
originally announced July 2015.
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DFT calculations of magnetic anisotropy energy for GeMnTe ferromagnetic semiconductor
Authors:
A. Łusakowski,
P. Bogusławski,
T. Story
Abstract:
Density functional theory (DFT) calculations of the energy of magnetic anisotropy for diluted ferromagnetic semiconductor GeMnTe were performed using using OpenMX package with fully relativistic pseudopotentials. The influence of hole concentration and magnetic ion neighborhood on magnetic anisotropy energy is presented. Analysis of microscopic mechanism of magnetic anisotropy is provided, in part…
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Density functional theory (DFT) calculations of the energy of magnetic anisotropy for diluted ferromagnetic semiconductor GeMnTe were performed using using OpenMX package with fully relativistic pseudopotentials. The influence of hole concentration and magnetic ion neighborhood on magnetic anisotropy energy is presented. Analysis of microscopic mechanism of magnetic anisotropy is provided, in particular the role of spin-orbit coupling, spin polarization and spatial changes of electron density are discussed. The calculations are in accordance with the experimental observation of perpendicular magnetic anisotropy in rhombohedral GeMnTe (111) thin layers.
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Submitted 25 May, 2015; v1 submitted 5 February, 2015;
originally announced February 2015.
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Microscopic mechanism of low thermal conductivity in lead-telluride
Authors:
Takuma Shiga,
Junichiro Shiomi,
Jie Ma,
Olivier Delaire,
Tomasz Radzynski,
Andrzej Lusakowski,
Keivan Esfarjani,
Gang Chen
Abstract:
The microscopic physics behind low lattice thermal conductivity of single crystal rocksalt lead telluride (PbTe) is investigated. Mode-dependent phonon (normal and umklapp) scattering rates and their impact on thermal conductivity were quantified by the first-principles-based anharmonic lattice dynamics calculations that accurately reproduce thermal conductivity in a wide temperature range. The lo…
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The microscopic physics behind low lattice thermal conductivity of single crystal rocksalt lead telluride (PbTe) is investigated. Mode-dependent phonon (normal and umklapp) scattering rates and their impact on thermal conductivity were quantified by the first-principles-based anharmonic lattice dynamics calculations that accurately reproduce thermal conductivity in a wide temperature range. The low thermal conductivity of PbTe is attributed to the scattering of longitudinal acoustic phonons by transverse optical phonons with large anharmonicity, and small group velocity of the soft transverse acoustic phonons. This results in enhancing the relative contribution of optical phonons, which are usually minor heat carrier in bulk materials.
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Submitted 3 April, 2012;
originally announced April 2012.
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Magnetic contribution to the specific heat of Pb_{1-x}Eu_{x}Te
Authors:
M. Gorska,
A. Lusakowski,
A. Jedrzejczak,
Z. Golacki,
R. R. Galazka,
J. R. Anderson,
H. Balci
Abstract:
The temperature dependence of the magnetic specific heat has been studied experimentally and theoretically in the semimagnetic semiconductor Pb_{1-x}Eu_{x}Te for x=0.027 and x=0.073, over the temperature range from 0.5 K to 10 K, in magnetic fields up to 2 T. There was a maximum in the magnetic specific heat between 1 and 3 K even in zero and low magnetic fields; this maximum shifted toward high…
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The temperature dependence of the magnetic specific heat has been studied experimentally and theoretically in the semimagnetic semiconductor Pb_{1-x}Eu_{x}Te for x=0.027 and x=0.073, over the temperature range from 0.5 K to 10 K, in magnetic fields up to 2 T. There was a maximum in the magnetic specific heat between 1 and 3 K even in zero and low magnetic fields; this maximum shifted toward higher temperatures with increasing magnetic field. The experimental data have been analyzed in the framework of a model in which we assume that the ground states of europium ions are split even without an external magnetic field. We present arguments which support this assumption and we show that it is possible to find a physical mechanism leading to the splitting which can explain the experimental results.
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Submitted 14 November, 2005;
originally announced November 2005.
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Ground state splitting of ^8S rare earth ions in semiconductors
Authors:
A. Lusakowski
Abstract:
We propose a new mechanism leading to the ground state splitting for the rare earth ^8S ions in semiconductor crystals. The resulting splitting is due to three effects, the first is the intra atomic 4f-5d spin-spin interaction, the second one is the spin - orbit interaction for 5d electrons and the third one is their hybridization with the valence band states of semiconductors host. The resultin…
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We propose a new mechanism leading to the ground state splitting for the rare earth ^8S ions in semiconductor crystals. The resulting splitting is due to three effects, the first is the intra atomic 4f-5d spin-spin interaction, the second one is the spin - orbit interaction for 5d electrons and the third one is their hybridization with the valence band states of semiconductors host. The resulting splitting significantly depends on the relative position of 5d level with respect to semiconductor host band structure. We also discuss different model, already known in the literature, which is also based on ion - band states hybridization. For both models, as an example, we present results of numerical calculations for rare earth ion in IV-VI semiconductor PbTe.
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Submitted 27 April, 2005;
originally announced April 2005.
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Spin filtering in a hybrid ferromagnetic-semiconductor microstructure
Authors:
J. Wróbel,
T. Dietl,
A. Lusakowski,
G. Grabecki,
K. Fronc,
R. Hey,
K. H. Ploog,
H. Shtrikman
Abstract:
We fabricated a hybrid structure in which cobalt and permalloy micromagnets produce a local in-plane spin-dependent potential barrier for high-mobility electrons at the GaAs/AlGaAs interface. Spin effects are observed in ballistic transport in the tens' millitesla range of the external field, and are attributed to switching between Zeeman and Stern-Gerlach modes -- the former dominating at low e…
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We fabricated a hybrid structure in which cobalt and permalloy micromagnets produce a local in-plane spin-dependent potential barrier for high-mobility electrons at the GaAs/AlGaAs interface. Spin effects are observed in ballistic transport in the tens' millitesla range of the external field, and are attributed to switching between Zeeman and Stern-Gerlach modes -- the former dominating at low electron densities.
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Submitted 13 April, 2004;
originally announced April 2004.
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Effect of bulk inversion asymmetry on the Datta-Das transistor
Authors:
A. Łusakowski,
J. Wróbel,
T. Dietl
Abstract:
A model of the Datta-Das spin field-effect transistor is presented which, in addition to the Rashba interaction, takes into account the influence of bulk inversion asymmetry of zinc-blende semiconductors. In the presence of bulk inversion asymmetry, the conductance is found to depend significantly on the crystallographic orientation of the channel. We determine the channel direction optimal for…
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A model of the Datta-Das spin field-effect transistor is presented which, in addition to the Rashba interaction, takes into account the influence of bulk inversion asymmetry of zinc-blende semiconductors. In the presence of bulk inversion asymmetry, the conductance is found to depend significantly on the crystallographic orientation of the channel. We determine the channel direction optimal for the observation of the Datta-Das effect in GaAs and InAs-based devices.
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Submitted 14 April, 2003;
originally announced April 2003.
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Electrons in a ferromagnetic metal with a domain wall
Authors:
V. K. Dugaev,
J. Barnas,
A. Lusakowski,
L. A. Turski
Abstract:
We present theoretical description of conduction electrons interacting with a domain wall in ferromagnetic metals. The description takes into account interaction between electrons. Within the semiclassical approximation we calculate the spin and charge distributions, particularly their modification by the domain wall. In the same approximation we calculate local transport characteristics, includ…
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We present theoretical description of conduction electrons interacting with a domain wall in ferromagnetic metals. The description takes into account interaction between electrons. Within the semiclassical approximation we calculate the spin and charge distributions, particularly their modification by the domain wall. In the same approximation we calculate local transport characteristics, including relaxation times and charge and spin conductivities. It is shown that these parameters are significantly modified near the wall and this modification depends on electron-electron interaction.
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Submitted 18 January, 2002;
originally announced January 2002.
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Possible long time tails in the current-current correlation function for the two dimensional electron gas in random magnetic field
Authors:
A. Lusakowski,
L. A. Turski
Abstract:
We consider two-dimensional degenerate electron gas in the presence of perpendicular random magnetic field. The magnetic field disorder which is assumed to be gaussian is characterized by two parameters. The first is proportional to the amplitude of local magnetic field fluctuations. The second one characterizes the disorder on the longer scale - we call it the screening length. Using Kubo formu…
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We consider two-dimensional degenerate electron gas in the presence of perpendicular random magnetic field. The magnetic field disorder which is assumed to be gaussian is characterized by two parameters. The first is proportional to the amplitude of local magnetic field fluctuations. The second one characterizes the disorder on the longer scale - we call it the screening length. Using Kubo formula for the conductivity we have found a class of diagrams which leads to the long time tails in the current - current correlation function. For short times comparing to the diffusion time corresponding to the screening length this function behaves like logarithm of time, for longer times it decays like $t^{-1}$ what of course puts in question the diffusive character of the behavior of the charged particle in random magnetic field widely assumed in the literature.
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Submitted 4 August, 1997;
originally announced August 1997.
