Development of a Selective Wet-Chemical Etchant for 3D Structuring of Silicon via Nonlinear Laser Lithography
Authors:
Mona Zolfaghari Borra,
Behrad Radfar,
Hisham Nasser,
Tahir Çolakoğlu,
Onur Tokel,
Ahmet Turnalı,
Merve Demirtaş,
Hande Ustunel,
Daniele Toffoli,
F. Ömer İlday,
Raşit Turan,
Ihor Pavlov,
Alpan Bek
Abstract:
Recently-demonstrated high-quality three-dimensional (3D) subsurface laser processing inside crystalline silicon (c-Si) wafers opens a door to a wide range of novel applications in multidisciplinary research areas. Using this technique, a novel maskless micro-pillars with precise control on the surface reflection and coverage are successfully fabricated by etching the laser processed region of c-S…
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Recently-demonstrated high-quality three-dimensional (3D) subsurface laser processing inside crystalline silicon (c-Si) wafers opens a door to a wide range of novel applications in multidisciplinary research areas. Using this technique, a novel maskless micro-pillars with precise control on the surface reflection and coverage are successfully fabricated by etching the laser processed region of c-Si wafer. To achieve this, a particular selective wet chemical etching is developed to follow subsurface laser processing of c-Si to reveal the desired 3D structures with smooth surfaces. Here, we report the development of a novel chromium-free chemical etching recipe based on copper nitrate, which yields substantially smooth surfaces at high etch rate and selectivity on the both laser-processed Si surface and subsurface, i.e., without significant etching of the unmodified Si. Our results show that the etch rate and surface morphology are interrelated and strongly influenced by the composition of the adopted etching solution. After an extensive compositional study performed at room temperature, we identify an etchant with a selectivity of over 1600 times for laser-modified Si with respect to unmodified Si. We also support our findings using density functional theory calculations of HF and Cu adsorption energies, indicating significant diversity on the c-Si and laser-modified surfaces.
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Submitted 14 August, 2023;
originally announced September 2023.
In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon
Authors:
O. Tokel,
A. Turnali,
G. Makey,
P. Elahi,
S. Ilday,
T. Çolakoğlu,
E. Ergeçen,
Ö. Yavuz,
R. Hübner,
M. Z. Borra,
I. Pavlov,
A. Bek,
R. Turan,
S. Tozburun,
F. Ö. Ilday
Abstract:
Silicon is an excellent material for microelectronics and integrated photonics with untapped potential for mid-IR optics. Despite broad recognition of the importance of the third dimension, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realized with techniques l…
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Silicon is an excellent material for microelectronics and integrated photonics with untapped potential for mid-IR optics. Despite broad recognition of the importance of the third dimension, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realized with techniques like reactive ion etching. Embedded optical elements, like in glass, electronic devices and better electronic-photonic integration are lacking. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 micrometer-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, i.e., "in-chip" microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances.
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Submitted 28 February, 2017; v1 submitted 9 September, 2014;
originally announced September 2014.
