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The hBN defects database: a theoretical compilation of color centers in hexagonal boron nitride
Authors:
Chanaprom Cholsuk,
Ashkan Zand,
Asli Cakan,
Tobias Vogl
Abstract:
Color centers in hexagonal boron nitride (hBN) have become an intensively researched system due to their potential applications in quantum technologies. There has been a large variety of defects being fabricated, yet, for many of them, the atomic origin remains unclear. The direct imaging of the defect is technically very challenging, in particular since, in a diffraction-limited spot, there are m…
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Color centers in hexagonal boron nitride (hBN) have become an intensively researched system due to their potential applications in quantum technologies. There has been a large variety of defects being fabricated, yet, for many of them, the atomic origin remains unclear. The direct imaging of the defect is technically very challenging, in particular since, in a diffraction-limited spot, there are many defects and then one has to identify the one that is optically active. Another approach is to compare the photophysical properties with theoretical simulations and identify which defect has a matching signature. It has been shown that a single property for this is insufficient and causes misassignments. Here, we publish a density functional theory (DFT)-based searchable online database covering the electronic structure of hBN defects (257 triplet and 211 singlet configurations), as well as their photophysical fingerprint (excited state lifetime, quantum efficiency, transition dipole moment and orientation, polarization visibility, and many more). All data is open-source and publicly accessible at https://h-bn.info and can be downloaded. It is possible to enter the experimentally observed defect signature and the database will output possible candidates which can be narrowed down by entering as many observed properties as possible. The database will be continuously updated with more defects and new photophysical properties (which can also be specifically requested by any users). The database therefore allows one to reliably identify defects but also investigate which defects might be promising for magnetic field sensing or quantum memory applications.
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Submitted 21 May, 2024;
originally announced May 2024.
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Comparative study of quantum emitter fabrication in wide bandgap materials using localized electron irradiation
Authors:
Anand Kumar,
Chanaprom Cholsuk,
Mohammad N. Mishuk,
Mouli Hazra,
Clotilde Pillot,
Tjorben Matthes,
Tanveer A. Shaik,
Asli Cakan,
Volker Deckert,
Su** Suwanna,
Tobias Vogl
Abstract:
Quantum light sources are crucial foundational components for various quantum technology applications. With the rapid development of quantum technology, there has been a growing demand for materials with the capability of hosting quantum emitters. One such material platform uses fluorescent defects in hexagonal boron nitride (hBN) that can host deep sublevels within the bandgap. The localized elec…
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Quantum light sources are crucial foundational components for various quantum technology applications. With the rapid development of quantum technology, there has been a growing demand for materials with the capability of hosting quantum emitters. One such material platform uses fluorescent defects in hexagonal boron nitride (hBN) that can host deep sublevels within the bandgap. The localized electron irradiation has shown its effectiveness in generating deep sublevels to induce single emitters in hBN. The question is whether localized (electron beam) irradiation is a reliable tool for creating emitters in other wide bandgap materials and its uniqueness to hBN. Here, we investigate and compare the fabrication of quantum emitters in hBN and exfoliated muscovite mica flakes along with other 3D crystals, such as silicon carbide and gallium nitride, which are known to host quantum emitters. We used our primary fabrication technique of localized electron irradiation using a standard scanning electron microscope. To complement our experimental work, we employed density functional theory simulations to study the atomic structures of defects in mica. While our fabrication technique allows one to create hBN quantum emitters with a high yield and high single photon purity, it is unable to fabricate single emitters in the other solid-state crystals under investigation. This allows us to draw conclusions on the emitter fabrication mechanism in hBN, which could rely on activating pre-existing defects by charge state manipulation. Therefore, we provide an essential step toward the identification of hBN emitters and their formation process.
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Submitted 26 February, 2024; v1 submitted 5 December, 2023;
originally announced December 2023.
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Unclonable Cryptography with Unbounded Collusions
Authors:
Alper Çakan,
Vipul Goyal
Abstract:
Quantum no-cloning theorem gives rise to the intriguing possibility of quantum copy protection where we encode a program in a quantum state such that a user in possession of k such states cannot create k + 1 working copies. Introduced by Aaronson (CCC 09) over a decade ago, copy protection has proven to be notoriously hard to achieve.
In this work, we construct public-key encryption and function…
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Quantum no-cloning theorem gives rise to the intriguing possibility of quantum copy protection where we encode a program in a quantum state such that a user in possession of k such states cannot create k + 1 working copies. Introduced by Aaronson (CCC 09) over a decade ago, copy protection has proven to be notoriously hard to achieve.
In this work, we construct public-key encryption and functional encryption schemes whose secret keys are copy-protected against unbounded collusions in the plain model (i.e. without any idealized oracles), assuming (post-quantum) subexponentially secure iO, one-way functions and LWE. This resolves a long-standing open question of constructing fully collusion-resistant copy-protected functionalities raised by multiple previous works.
Prior to our work, copy-protected functionalities were known only in restricted collusion models where either an a-priori bound on the collusion size was needed, in the plain model with the same assumptions as ours (Liu, Liu, Qian, Zhandry [TCC 22]), or adversary was only prevented from doubling their number of working programs, in a structured quantum oracle model (Aaronson [CCC 09]).
We obtain our results through a novel technique which uses identity-based encryption to construct unbounded collusion resistant copy-protection schemes from 1-to-2 secure schemes. This is analogous to the technique of using digital signatures to construct full-fledged quantum money from single banknote schemes1 (Lutomirski et al. [ICS 09], Farhi et al. [ITCS 12], Aaronson and Christiano [STOC 12]). We believe our technique is of independent interest.
Along the way, we also construct a puncturable functional encryption scheme whose master secret key can be punctured at all functions f such that f (m0) != f (m1). This might also be of independent interest.
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Submitted 30 November, 2023;
originally announced November 2023.
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Identifying electronic transitions of defects in hexagonal boron nitride for quantum memories
Authors:
Chanaprom Cholsuk,
Asli Cakan,
Su** Suwanna,
Tobias Vogl
Abstract:
A quantum memory is a crucial keystone for enabling large-scale quantum networks. Applicable to the practical implementation, specific properties, i.e., long storage time, selective efficient coupling with other systems, and a high memory efficiency are desirable. Though many quantum memory systems are developed thus far, none of them can perfectly meet all requirements. This work herein proposes…
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A quantum memory is a crucial keystone for enabling large-scale quantum networks. Applicable to the practical implementation, specific properties, i.e., long storage time, selective efficient coupling with other systems, and a high memory efficiency are desirable. Though many quantum memory systems are developed thus far, none of them can perfectly meet all requirements. This work herein proposes a quantum memory based on color centers in hexagonal boron nitride (hBN), where its performance is evaluated based on a simple theoretical model of suitable defects in a cavity. Employing density functional theory calculations, 257 triplet and 211 singlet spin electronic transitions are investigated. Among these defects, it is found that some defects inherit the $Λ$ electronic structures desirable for a Raman-type quantum memory and optical transitions can couple with other quantum systems. Further, the required quality factor and bandwidth are examined for each defect to achieve a 95% writing efficiency. Both parameters are influenced by the radiative transition rate in the defect state. In addition, inheriting triplet-singlet spin multiplicity indicates the possibility of being a quantum sensing, in particular, optically detected magnetic resonance. This work therefore demonstrates the potential usage of hBN defects as a quantum memory in future quantum networks.
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Submitted 22 January, 2024; v1 submitted 31 October, 2023;
originally announced October 2023.
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Computational Quantum Secret Sharing
Authors:
Alper Çakan,
Vipul Goyal,
Chen-Da Liu-Zhang,
João Ribeiro
Abstract:
Quantum secret sharing (QSS) allows a dealer to distribute a secret quantum state among a set of parties so that certain subsets can reconstruct the secret, while unauthorized subsets obtain no information. While QSS was introduced over twenty years ago, previous works focused only on existence of perfectly secure schemes, and the share size of the known schemes is exponential even for access stru…
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Quantum secret sharing (QSS) allows a dealer to distribute a secret quantum state among a set of parties so that certain subsets can reconstruct the secret, while unauthorized subsets obtain no information. While QSS was introduced over twenty years ago, previous works focused only on existence of perfectly secure schemes, and the share size of the known schemes is exponential even for access structures computed by polynomial size monotone circuits. This stands in contrast to the classical case, where efficient computationally-secure schemes have been long known for all access structures in $\mathsf{monotone~P}$, and one can even obtain shares which are much shorter than the secret which is impossible with perfect security.
In this work, we initiate the study of computationally-secure QSS and show that computational assumptions help significantly in building QSS schemes. We present a simple compiler and use it to obtain a large variety results: We construct polynomial-time QSS schemes under standard assumptions for a rich class of access structures. This includes many access structures for which previous results in QSS required exponential share size. We also construct QSS schemes for which the size of the shares is significantly smaller than the size of the secret. As in the classical case, this is impossible with perfect security.
We also use our compiler to obtain results beyond computational QSS. In the information-theoretic setting, we improve the share size of perfect QSS schemes for a large class of access structures to $1.5^{n+o(n)}$, improving upon best known schemes and matching the best known result for general access structures in the classical case. Finally, we show construct efficient schemes for all access structures in $\mathsf{P}$ and $\mathsf{NP}$ when the quantum secret sharing scheme is given multiple of copies of the secret.
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Submitted 29 April, 2023;
originally announced May 2023.
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Rényi free energy and variational approximations to thermal states
Authors:
Giacomo Giudice,
Aslı Çakan,
J. Ignacio Cirac,
Mari Carmen Bañuls
Abstract:
We propose the construction of thermodynamic ensembles that minimize the Rényi free energy, as an alternative to Gibbs states. For large systems, the local properties of these Rényi ensembles coincide with those of thermal equilibrium, and they can be used as approximations to thermal states. We provide algorithms to find tensor network approximations to the 2-Rényi ensemble. In particular, a matr…
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We propose the construction of thermodynamic ensembles that minimize the Rényi free energy, as an alternative to Gibbs states. For large systems, the local properties of these Rényi ensembles coincide with those of thermal equilibrium, and they can be used as approximations to thermal states. We provide algorithms to find tensor network approximations to the 2-Rényi ensemble. In particular, a matrix-product-state representation can be found by using gradient-based optimization on Riemannian manifolds, or via a non-linear evolution which yields the desired state as a fixed point. We analyze the performance of the algorithms and the properties of the ensembles on one-dimensional spin chains.
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Submitted 7 June, 2021; v1 submitted 23 December, 2020;
originally announced December 2020.
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Approximating the long time average of the density operator: Diagonal ensemble
Authors:
Aslı Çakan,
J. Ignacio Cirac,
Mari Carmen Bañuls
Abstract:
For an isolated generic quantum system out of equilibrium, the long time average of observables is given by the diagonal ensemble, i.e. the mixed state with the same probability for energy eigenstates as the initial state but without coherences between different energies. In this work we present a method to approximate the diagonal ensemble using tensor networks. Instead of simulating the real tim…
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For an isolated generic quantum system out of equilibrium, the long time average of observables is given by the diagonal ensemble, i.e. the mixed state with the same probability for energy eigenstates as the initial state but without coherences between different energies. In this work we present a method to approximate the diagonal ensemble using tensor networks. Instead of simulating the real time evolution, we adapt a filtering scheme introduced earlier in [Phys. Rev. B 101, 144305 (2020)] to this problem. We analyze the performance of the method on a non-integrable spin chain, for which we observe that local observables converge towards thermal values polynomially with the inverse width of the filter.
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Submitted 2 November, 2020;
originally announced November 2020.
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Importance-Driven Deep Learning System Testing
Authors:
Simos Gerasimou,
Hasan Ferit Eniser,
Alper Sen,
Alper Cakan
Abstract:
Deep Learning (DL) systems are key enablers for engineering intelligent applications due to their ability to solve complex tasks such as image recognition and machine translation. Nevertheless, using DL systems in safety- and security-critical applications requires to provide testing evidence for their dependable operation. Recent research in this direction focuses on adapting testing criteria fro…
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Deep Learning (DL) systems are key enablers for engineering intelligent applications due to their ability to solve complex tasks such as image recognition and machine translation. Nevertheless, using DL systems in safety- and security-critical applications requires to provide testing evidence for their dependable operation. Recent research in this direction focuses on adapting testing criteria from traditional software engineering as a means of increasing confidence for their correct behaviour. However, they are inadequate in capturing the intrinsic properties exhibited by these systems. We bridge this gap by introducing DeepImportance, a systematic testing methodology accompanied by an Importance-Driven (IDC) test adequacy criterion for DL systems. Applying IDC enables to establish a layer-wise functional understanding of the importance of DL system components and use this information to assess the semantic diversity of a test set. Our empirical evaluation on several DL systems, across multiple DL datasets and with state-of-the-art adversarial generation techniques demonstrates the usefulness and effectiveness of DeepImportance and its ability to support the engineering of more robust DL systems.
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Submitted 9 February, 2020;
originally announced February 2020.
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Strained band edge characteristics from hybrid density functional theory and empirical pseudopotentials: GaAs, GaSb, InAs and InSb
Authors:
Aslı Çakan,
Cem Sevik,
Ceyhun Bulutay
Abstract:
The properties of a semiconductor get drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their electronic band structure and deformation potentials subject to various strains based on hybrid density functional theory. Guided by these first-principles results…
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The properties of a semiconductor get drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their electronic band structure and deformation potentials subject to various strains based on hybrid density functional theory. Guided by these first-principles results, we develop strain-compliant local pseudopotentials for use in the empirical pseudopotential method (EPM). We demonstrate that the newly proposed empirical pseudopotentials perform well close to band edges and under anisotropic crystal deformations. Using EPM, we explore the heavy hole-light hole mixing characteristics under different stress directions which may be useful in manipulating their transport properties and optical selection rules. The very low 5 Ry cutoff targeted in the generated pseudopotentials paves the way for large-scale EPM-based electronic structure computations involving these lattice mismatched constituents.
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Submitted 22 May, 2016;
originally announced May 2016.
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Disorder-free localization around the conduction band edge of crossing and kinked silicon nanowires
Authors:
Ümit Keleş,
Aslı Çakan,
Ceyhun Bulutay
Abstract:
We explore ballistic regime quantum transport characteristics of oxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scale empirical pseudopotential electronic structure framework, coupled to the Kubo-Greenwood transport analysis. A real-space wave function study is undertaken and the outcomes are interpreted together with the findings of ballistic transport calculations. Thi…
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We explore ballistic regime quantum transport characteristics of oxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scale empirical pseudopotential electronic structure framework, coupled to the Kubo-Greenwood transport analysis. A real-space wave function study is undertaken and the outcomes are interpreted together with the findings of ballistic transport calculations. This reveals that ballistic transport edge lies tens to hundreds of millielectron volts above the lowest unoccupied molecular orbital, with a substantial number of localized states appearing in between, as well as above the former. We show that these localized states are not due to the oxide interface, but rather core silicon-derived. They manifest the wave nature of electrons brought to foreground by the reflections originating from NW junctions and bends. Hence, we show that the crossings and kinks of even ultraclean Si NWs possess a conduction band tail without a recourse to atomistic disorder.
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Submitted 10 February, 2015;
originally announced February 2015.