Condensed Matter > Materials Science
[Submitted on 8 Oct 2023 (v1), last revised 5 Dec 2023 (this version, v2)]
Title:Pulsed-mode metalorganic vapor-phase epitaxy of GaN on graphene-coated c-sapphire for freestanding GaN thin films
View PDFAbstract:We report the growth of high-quality GaN epitaxial thin films on graphene-coated c-sapphire substrates using pulsed-mode metalorganic vapor-phase epitaxy, together with the fabrication of freestanding GaN films by simple mechanical exfoliation for transferable light-emitting diodes (LEDs). High-quality GaN films grown on the graphene-coated sapphire substrates were easily lifted off using thermal release tape and transferred onto foreign substrates. Furthermore, we revealed that the pulsed operation of ammonia flow during GaN growth was a critical factor for the fabrication of high-quality freestanding GaN films. These films, exhibiting excellent single crystallinity, were utilized to fabricate transferable GaN LEDs by heteroepitaxially growing InxGa1-xN/GaN multiple quantum wells and a p-GaN layer on the GaN films, showing their potential application in advanced optoelectronic devices.
Submission history
From: Seokje Lee [view email][v1] Sun, 8 Oct 2023 11:36:38 UTC (1,689 KB)
[v2] Tue, 5 Dec 2023 05:05:27 UTC (1,689 KB)
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